المؤلفون: Jia, Y., Xu, Y., Yu, X., Chen, Z., Fu, Y., Zhou, J., Kong, Y., Chen, T., Lu, W.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(2):971-975 Feb, 2024

المؤلفون: Qiao, B., Dai, P., Yu, X., Li, Z., Tao, R., Zhou, J., Shen, R., Chen, T.

المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 12:51-55 2024

المؤلفون: Zhang, M., Wang, W., Wen, F., Lin, F., Chen, G., He, S., Wang, Y., Fan, S., Bu, R., Min, T., Wang, H.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(7):3563-3567 Jul, 2022

المؤلفون: Chen, Z., Yu, X., Zhou, J., Mao, S., Kong, Y., Chen, T., Xu, R., Yan, B., Xu, Y.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 69(1):278-284 Jan, 2022

المؤلفون: Bing Qiao, Pengfei Dai, Xinxin Yu, Zhonghui Li, Ran Tao, Jianjun Zhou, Rui Shen, Tangsheng Chen

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 51-55 (2024)

مصطلحات موضوعية: Hydrogen-terminated, (111)-oriented diamond, output power, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10373932/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/8aae63e2ddb24af2a399362806cd0da3

المؤلفون: Zhang, M., Wang, W., Chen, G., Abbasi, H.N., Wang, Y., Lin, F., Wen, F., Wang, K., Zhang, J., Bu, R., Wang, H.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(11):4784-4788 Nov, 2020

المؤلفون: Soleimanzadeh, R., Naamoun, M., Khadar, R.A., van Erp, R., Matioli, E.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 41(1):119-122 Jan, 2020

المؤلفون: Wong, Hiu Yung, Braga, Nelson, Mickevicius, R. V.

المصدر: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2017 International Conference on. :333-336 Sep, 2017

Relation: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

المؤلفون: Zhang Minghui, Wang Wei, Wen Feng, Lin Fang, Chen Genqiang, Wang Fei, He Shi, Wang Yanfeng, Fan Shuwei, Bu Renan, Min Tai, Yu Cui, Wang Hongxing

المصدر: Functional Diamond, Vol 2, Iss 1, Pp 258-262 (2022)

مصطلحات موضوعية: hydrogen-terminated diamond, field effect transistor, germanium, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2694-1120

URL الوصول: https://doaj.org/article/0fe7f312b12e46c4a6bfc6f484fdd1b7

لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل.