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1دورية أكاديمية
المؤلفون: Hyun-Jin Shin, Sunil Babu Eadi, Yeong-Jin An, Tae-Gyu Ryu, Do-woo Kim, Hi-Deok Lee, Hyuk-Min Kwon
المصدر: Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2045-2322
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2دورية أكاديمية
المؤلفون: Ki-Yong Shin, Ju-Won Shin, Walid Amir, Surajit Chakraborty, Jae-Phil Shim, Sang-Tae Lee, Hyunchul Jang, Chan-Soo Shin, Hyuk-Min Kwon, Tae-Woo Kim
المصدر: Materials, Vol 16, Iss 18, p 6138 (2023)
مصطلحات موضوعية: reliability, traps, MHEMT, fast transient, pulsed I–V, 1/f (low-frequency) noise, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Hyun-Woong Choi, Ki-Woo Song, Seong-Hyun Kim, Kim Thanh Nguyen, Sunil Babu Eadi, Hyuk-Min Kwon, Hi-Deok Lee
المصدر: Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2045-2322
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4دورية أكاديمية
المؤلفون: Hyun-Jin Shin, Sunil Babu Eadi, Seong-Hyun Kim, Tae-Gyu Ryu, Yeong-Jin An, Do-Woo Kim, Hi-Deok Lee, Hyuk-Min Kwon
المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 679-686 (2022)
مصطلحات موضوعية: 1/f noise, low-frequency noise, semiconductor device noise, semiconductor-insulator interfaces, silicon-on-insulator, TFETs, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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5دورية أكاديمية
المؤلفون: Walid Amir, Surajit Chakraborty, Hyuk-Min Kwon, Tae-Woo Kim
المصدر: Materials, Vol 16, Iss 12, p 4469 (2023)
مصطلحات موضوعية: AlGaN/GaN HEMT, interfacial degradation, fast-transient charge-trapping, pulsed I–V, constant voltage stress (CVS), threshold voltage degradation (∆VT), Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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6دورية أكاديمية
المؤلفون: Surajit Chakraborty, Walid Amir, Ju-Won Shin, Ki-Yong Shin, Chu-Young Cho, Jae-Moo Kim, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Hyuk-Min Kwon, Dae-Hyun Kim, Tae-Woo Kim
المصدر: Materials, Vol 15, Iss 23, p 8415 (2022)
مصطلحات موضوعية: AlGaN/GaN, self-heating phenomenon, modeling, substrates, thermal resistance, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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7مؤتمر
المؤلفون: Won-Ho Choi, Hyuk-Min Kwon, In-Shik Han, Tae-Gyu Goo, Min-Ki Na, Chang Yong Kang, Gennadi Bersuker, Byoung Hun Lee, Yoon-Ha Jeong, Hi-Deok Lee, Jammy, R.
المصدر: 2008 IEEE International Electron Devices Meeting Electron Devices Meeting, 2008. IEDM 2008. IEEE International. :1-4 Dec, 2008
Relation: 2008 IEEE International Electron Devices Meeting (IEDM)
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8
المؤلفون: Kim, Walid Amir, Surajit Chakraborty, Hyuk-Min Kwon, Tae-Woo
المصدر: Materials; Volume 16; Issue 12; Pages: 4469
مصطلحات موضوعية: AlGaN/GaN HEMT, interfacial degradation, fast-transient charge-trapping, pulsed I–V, constant voltage stress (CVS), threshold voltage degradation (∆VT), 1/f low-frequency noise, volume trap density (Nt)
وصف الملف: application/pdf
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9
المؤلفون: Han Yan, Yeong-Jin An, Hyuk-Min Kwon, SunilBabu Eadi, Hi-Deok Lee
المصدر: Journal of the Institute of Electronics and Information Engineers. 59:147-151
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e4ab973e8536656b30a1571756bc7c63
https://doi.org/10.5573/ieie.2022.59.10.147 -
10دورية أكاديمية
المؤلفون: Sung-Kyu Kwon, Hyuk-Min Kwon, In-Shik Han, Jae-Hyung Jang, Sun-Ho Oh, Hyeong-Sub Song, Byoung-Seok Park, Yi-Sun Chung, Jung-Hwan Lee, Si-Bum Kim, Ga-Won Lee, Hi-Deok Lee
المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 808-814 (2018)
مصطلحات موضوعية: Fluorine (F), activation energy (Ea), negative bias temperature instability (NBTI), low-frequency noise (LFN), random telegraph signal (RTS) noise, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource