يعرض 1 - 4 نتائج من 4 نتيجة بحث عن '"Hyun Wook Shim"', وقت الاستعلام: 1.24s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Photoluminescence characterization of biaxial tensile strained GaAs.

    المؤلفون: Ki Soo Kim, Gye Mo Yang, Hyun Wook Shim, Kee Young Lim, Eun-Kyung Suh, Hyung Jae Lee

    المصدر: Journal of Applied Physics; 11/15/1997, Vol. 82 Issue 10, p5103, 4p, 1 Chart, 3 Graphs

    مصطلحات موضوعية: PHOTOLUMINESCENCE, STRAINS & stresses (Mechanics)

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  2. 2
    Improvement of electrical and optical properties of ingan/ganbased lightemitting diodes with triangular quantum well structure

    المؤلفون: R. J. Choi, Chang-Hee Hong, Eun-Kyung Suh, Yoon-Bong Hahn, Hyun-Wook Shim, Hyung Jae Lee

    المصدر: Korean Journal of Chemical Engineering. 20:1134-1137

    مصطلحات موضوعية: Materials science, business.industry, General Chemical Engineering, General Chemistry, Line (electrical engineering), law.invention, Optics, Transmission electron microscopy, law, Optoelectronics, Light emission, business, Electronic band structure, Quantum well, Light-emitting diode, Diode, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::10cd522e3d8b9e3cc6cc7744e9dba304
    https://doi.org/10.1007/bf02706949

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  3. 3
    Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

    المؤلفون: Guan-Bo Lin, Qifeng Shan, Min-Ho Kim, Hyun Wook Shim, David S. Meyaard, Jaehee Cho, Cheol-soo Sone, E. Fred Schubert

    المصدر: Applied Physics Letters. 99:251115

    مصطلحات موضوعية: Electron mobility, Materials science, Physics and Astronomy (miscellaneous), Condensed matter physics, business.industry, media_common.quotation_subject, Carrier generation and recombination, Wide-bandgap semiconductor, Asymmetry, Acceptor, law.invention, Charge-carrier density, stomatognathic system, law, Electric field, Optoelectronics, Quantum efficiency, Voltage droop, business, media_common, Diode, Light-emitting diode

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d968465406ea96beb735d7e983135c8
    https://doi.org/10.1063/1.3671395

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  4. 4
    Growth of GaN nanowires on Si substrate using Ni catalyst in vertical chemical vapor deposition reactor

    المؤلفون: Tae Yun Kim, Sang Hyun Lee, Young Hwan Mo, Hyun Wook Shim, Kee Suk Nahm, Eun-Kyung Suh, Gyung Soo Park

    المصدر: Korean Journal of Chemical Engineering. 23:1068-1068

    مصطلحات موضوعية: General Chemical Engineering, General Chemistry

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b9c10d62a7932583d9fc945dd3419567
    https://doi.org/10.1007/s11814-006-0032-0

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