المؤلفون: Simoen, E., O'sullivan, B., Ritzenthaler, R., Dentoni Litta, E., Schram, T., Horiguchi, N., Claeys, C.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 65(9):3676-3681 Sep, 2018

المؤلفون: McLain, M., Barnaby, H. J., Holbert, K. E., Schrimpf, R. D., Shah, H., Amort, A., Baze, M., Wert, J.

المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 54(6):2210-2217 Dec, 2007

المؤلفون: Stefano Bonaldo, Serena Mattiazzo, Marta Bagatin, Alessandro Paccagnella, Giovanni Margutti, Simone Gerardin

المصدر: Electronics
Volume 12
Issue 3
Pages: 543

مصطلحات موضوعية: 150 nm technology, threshold voltage shift, leakage current, TID, core transistors, Computer Networks and Communications, I/O transistors, total ionizing dose, MOSFET, Hardware and Architecture, Control and Systems Engineering, Signal Processing, radiation effects, Electrical and Electronic Engineering

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c00635bcbaae8916372d97a6ff3a91e6
https://hdl.handle.net/11577/3469069

لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل.