يعرض 1 - 10 نتائج من 511 نتيجة بحث عن '"In situ doping"', وقت الاستعلام: 1.04s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Development of APCVD BSG and POCl3 Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication

    المؤلفون: Choi, W., Ok, Y., Madani, K., Upadhyaya, V.D., Upadhyaya, A.D., Rounsaville, B., Padhamnath, P., Luna, G.D., Arcebal, J.D., Rohatgi, A.

    المصدر: IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 14(5):727-736 Sep, 2024

    Full Text Finder
    أضف إلى المفضلة
  2. 2
    مؤتمر
    Optimization of In-situ and Ex-situ doped p+ Passivating Contact for High Efficiency p-TOPCon Solar Cell Application

    المؤلفون: Choi, Wook-Jin, Madani, Keeya, Huang, Ying-Yuan, Jain, Aditi, Ok, Young-Woo, Upadhyaya Min Gu Kang, Vijaykumar D., Choi, Sungjin, Rohatgi, Ajeet

    المصدر: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2021 IEEE 48th. :1907-1912 Jun, 2021

    Relation: 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC)

    أضف إلى المفضلة
  3. 3
    مؤتمر
    Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10−10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature

    المؤلفون: Zheng, Gerui, Wang, Yuxuan, Xu, Haiwen, Khazaka, Rami, Muehlenbein, Lutz, Luo, Sheng, Chen, Xuanqi, Shao, Rui, Zheng, Zijie, Liang, Gengchiau, Gong, Xiao

    المصدر: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023

    Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

    Full Text Finder
    أضف إلى المفضلة
  4. 4
    مؤتمر
    LPCV-Deposited Poly-Si Passivated Contacts: Surface Passivation, Gettering and Integration in High Efficiency Devices

    المؤلفون: Lanterne, Adeline, Yang, Juhong, Loretz, Jean-Charles., Martel, Benoit, Caruel, Mylene, Enjalbert, Nicolas, Lignier, Helene, Dubois, Sebastien

    المصدر: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2020 47th IEEE. :2675-2678 Jun, 2020

    Relation: 2020 IEEE 47th Photovoltaic Specialists Conference (PVSC)

    أضف إلى المفضلة
  5. 5
    مؤتمر
    300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures

    المؤلفون: Xu, Haiwen, Khazaka, Rami, Zhang, Jishen, Zheng, Zijie, Chen, Yue, Gong, Xiao

    المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :367-368 Jun, 2022

    Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

    Full Text Finder
    أضف إلى المفضلة
  6. 6
    دورية أكاديمية
    Reducing structural degradation of high-voltage single-crystal Ni-rich cathode through in situ doping strategy

    المؤلفون: Fan, Xin-MingAff1, Aff3, Aff4, Aff5, Zhang, ZhiAff2, IDs1259802302288y_cor2, Mao, Gao-Qiang, Tong, Ying-Jie, Lin, Ke-Bo, Tong, HuiAff3, Aff4, Aff5, IDs1259802302288y_cor6, Wei, Wei-Feng, Tian, Qing-HuaAff3, Aff4, Aff5, Guo, Xue-YiAff3, Aff4, Aff5, IDs1259802302288y_cor9

    المصدر: Rare Metals. 42(9):2993-3003

    Find this article in full text from Springer Verlag. Full Text Finder
    أضف إلى المفضلة
  7. 7
    مؤتمر
    Ultra-low Specific Contact Resistivity (3.2×10-10 Ω-cm2) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping

    المؤلفون: Xu, Haiwen, Wang, Xinke, Luo, Sheng, Zhang, Jishen, Han, Kaizhen, Sun, Chen, Wang, Chengkuan, Khazaka, Rami, Xie, Qi, Huang, Yi, Zhou, Yi, He, Jiaqing, Liang, Gengchiau, Gong, Xiao

    المصدر: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021

    Relation: 2021 Symposium on VLSI Technology

    Full Text Finder
    أضف إلى المفضلة
  8. 8
    مؤتمر
    An area efficient low-voltage 6-T SRAM cell using stacked silicon nanowires

    المؤلفون: Huang, Ya-Chi, Chiang, Meng-Hsueh, Wang, Shui-Jinn, Gupta, Sumeet Kumar

    المصدر: 2018 International Conference on IC Design & Technology (ICICDT) IC Design & Technology (ICICDT), 2018 International Conference on. :117-120 Jun, 2018

    Relation: 2018 International Conference on IC Design & Technology (ICICDT)

    Full Text Finder
    أضف إلى المفضلة
  9. 9
    دورية أكاديمية
    Process Parameter Optimisation for Endohedral Metallofullerene Synthesis via the Arc-Discharge Method

    المؤلفون: Sapna Sinha, Karifa Sanfo, Panagiotis Dallas, Sujay Kumar, Kyriakos Porfyrakis

    المصدر: Inorganics, Vol 12, Iss 2, p 38 (2024)

    مصطلحات موضوعية: endohedral metallofullerenes, EMFs, arc discharge, bottom-up synthesis, in situ doping, Inorganic chemistry, QD146-197

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2304-6740/12/2/38; https://doaj.org/toc/2304-6740

    URL الوصول: https://doaj.org/article/e1fb943b08874c18af43e43ecbf35bdd

    Find this article in full text from ProQuest Full Text Finder
    أضف إلى المفضلة
  10. 10
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

    View record in Scopus
    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء