يعرض 1 - 3 نتائج من 3 نتيجة بحث عن '"In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel"', وقت الاستعلام: 0.96s تنقيح النتائج
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    دورية أكاديمية

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    دورية أكاديمية

    المؤلفون: Shin SH; Department of Semiconductor Process Equipment, Semiconductor Convergence Campus, Korea Polytechnics, 41-12, Songwon-gil, Gongdo-eup, Anseong-si 17550, Republic of Korea., Shim JP; Device Technology Division, Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si 16229, Republic of Korea., Jang H; Device Technology Division, Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si 16229, Republic of Korea., Jang JH; Department of Energy Engineering, Korea Institute of Energy Technology, 200, Hyeoksin-ro, Naju-si 58330, Republic of Korea.

    المصدر: Micromachines [Micromachines (Basel)] 2022 Dec 25; Vol. 14 (1). Date of Electronic Publication: 2022 Dec 25.

    نوع المنشور: Journal Article

    بيانات الدورية: Publisher: MDPI Country of Publication: Switzerland NLM ID: 101640903 Publication Model: Electronic Cited Medium: Print ISSN: 2072-666X (Print) Linking ISSN: 2072666X NLM ISO Abbreviation: Micromachines (Basel) Subsets: PubMed not MEDLINE