-
1دورية أكاديمية
المؤلفون: Seung Heon Shin, Jae-Phil Shim, Hyunchul Jang, Jae-Hyung Jang
المصدر: Micromachines, Vol 14, Iss 1, p 56 (2022)
مصطلحات موضوعية: mHEMT, HEMT, InAs HEMT, InGaAs HEMT, Mo-based Ohmic contact, In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
-
2دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
3دورية أكاديمية
المؤلفون: Shin SH; Department of Semiconductor Process Equipment, Semiconductor Convergence Campus, Korea Polytechnics, 41-12, Songwon-gil, Gongdo-eup, Anseong-si 17550, Republic of Korea., Shim JP; Device Technology Division, Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si 16229, Republic of Korea., Jang H; Device Technology Division, Korea Advanced Nano Fab Center (KANC), 109, Gwanggyo-ro, Yeongtong-gu, Suwon-si 16229, Republic of Korea., Jang JH; Department of Energy Engineering, Korea Institute of Energy Technology, 200, Hyeoksin-ro, Naju-si 58330, Republic of Korea.
المصدر: Micromachines [Micromachines (Basel)] 2022 Dec 25; Vol. 14 (1). Date of Electronic Publication: 2022 Dec 25.
نوع المنشور: Journal Article
بيانات الدورية: Publisher: MDPI Country of Publication: Switzerland NLM ID: 101640903 Publication Model: Electronic Cited Medium: Print ISSN: 2072-666X (Print) Linking ISSN: 2072666X NLM ISO Abbreviation: Micromachines (Basel) Subsets: PubMed not MEDLINE