المؤلفون: Jeong, Jaeyong, Kim, Seong Kwang, Kim, Jongmin, Geum, Dae-Myeong, Kim, SangHyeon

المصدر: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2022 6th IEEE. :79-81 Mar, 2022

Relation: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

المؤلفون: Venkatesh Murthy, B T, Singh, Nitish Kumar, Jha, Rajdeep, Kumar, Nilesh, Kumar, Raj

المصدر: 2020 5th International Conference on Communication and Electronics Systems (ICCES) Communication and Electronics Systems (ICCES), 2020 5th International Conference on. :80-83 Jun, 2020

Relation: 2020 5th International Conference on Communication and Electronics Systems (ICCES)

المؤلفون: Murthy, B.T.V., N.P., S., Ranjan, H., Power, V., Kumar, T.M.

المصدر: 2020 5th International Conference on Communication and Electronics Systems (ICCES) Communication and Electronics Systems (ICCES), 2020 5th International Conference on. :58-61 Jun, 2020

Relation: 2020 5th International Conference on Communication and Electronics Systems (ICCES)

المؤلفون: Leuther, Arnulf, Merkle, Thomas, Weber, Rainer, Sommer, Rainer, Tessmann, Axel

المصدر: 2019 Compound Semiconductor Week (CSW) Compound Semiconductor Week (CSW), 2019. :1-2 May, 2019

Relation: 2019 Compound Semiconductor Week (CSW)

المؤلفون: Shukla, Nutan, Mohapatra, Meryleen, Panda, A. K.

المصدر: 2014 International Conference on Control, Instrumentation, Communication and Computational Technologies (ICCICCT) Control, Instrumentation, Communication and Computational Technologies (ICCICCT), 2014 International Conference on. :841-846 Jul, 2014

Relation: 2014 International Conference on Control, Instrumentation, Communication and Computational Technologies (ICCICCT)

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المؤلفون: Jinye Wang, Jun Liu, Jie Wang, Zhenxin Zhao

المصدر: Micromachines, Vol 14, Iss 5, p 1023 (2023)

مصطلحات موضوعية: quasi-ballistic transport, large-signal model, InGaAs HEMT, dislocation scattering, one-flux, transmission coefficient, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/14/5/1023; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/f56a04f25ba44ad7bd7b18ddb69eccbf

المؤلفون: Jo, H., Baek, J., Yun, D., Son, S., Lee, J., Kim, T., Kim, D., Tsutsumi, T., Sugiyama, H., Matsuzaki, H.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 39(11):1640-1643 Nov, 2018

المؤلفون: Seung Heon Shin, Jae-Phil Shim, Hyunchul Jang, Jae-Hyung Jang

المصدر: Micromachines, Vol 14, Iss 1, p 56 (2022)

مصطلحات موضوعية: mHEMT, HEMT, InAs HEMT, InGaAs HEMT, Mo-based Ohmic contact, In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/14/1/56; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/90f4b04275dd45abb98534776b707fae

المؤلفون: McMorrow, D., Ferlet-Cavrois, V., Paillet, P., Duhamel, O., Baggio, J., Boos, J. B., Melinger, J. S.

المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 54(4):1010-1017 Aug, 2007