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1مؤتمر
المؤلفون: Bivour, Martin, Temmler, Jan, Zahringer, Florian, Glunz, Stefan, Hermle, Martin
المصدر: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2016 IEEE 43rd. :0215-0220 Jun, 2016
Relation: 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)
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2دورية أكاديمية
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3دورية أكاديمية
المؤلفون: Kumar, S., Vandana, Rauthan, C. M. S., Kaul, V. K., Singh, S. N., Singh, P. K.
المصدر: IEEE Journal of Photovoltaics IEEE J. Photovoltaics Photovoltaics, IEEE Journal of. 4(1):380-386 Jan, 2014
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4دورية أكاديمية
المؤلفون: Porrasmaa, SanteriAff1, Dönsberg, Timo, Manoocheri, Farshid, Ikonen, ErkkiAff1, Aff2
المصدر: Optical Review. 27(2):190-194
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5دورية أكاديمية
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6دورية أكاديمية
المؤلفون: Kirikov, S. V.Aff1, Perevezentsev, V. N., Svirina, Yu. V.
المصدر: Russian Metallurgy (Metally). 2018(10):904-909
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7دورية أكاديمية
المؤلفون: Ozhan Koybasi, Ørnulf Nordseth, Trinh Tran, Marco Povoli, Mauro Rajteri, Carlo Pepe, Eivind Bardalen, Farshid Manoocheri, Anand Summanwar, Mikhail Korpusenko, Michael N. Getz, Per Ohlckers, Erkki Ikonen, Jarle Gran
المصدر: Sensors, Vol 21, Iss 23, p 7807 (2021)
مصطلحات موضوعية: silicon photodetector, inversion layer photodiode, induced-junction, surface passivation, PECVD silicon nitride, radiometry, Chemical technology, TP1-1185
وصف الملف: electronic resource
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8دورية أكاديمية
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9
المؤلفون: Trinh Tran, Ozhan Koybasi, Carlo Pepe, Erkki Ikonen, Marco Povoli, Michael N. Getz, Jarle Gran, Anand Summanwar, Per Ohlckers, Mauro Rajteri, Farshid Manoocheri, Ornulf Nordseth, Eivind Bardalen, Mikhail Korpusenko
المساهمون: SINTEF, Institute for Energy Technology, Justervesenet, INRiM, University of South-Eastern Norway, Metrology Research Institute, University of Oslo, Aalto-yliopisto, Aalto University
المصدر: Sensors; Volume 21; Issue 23; Pages: 7807
Sensors
Koybasi, O, Nordseth, Ø, Tran, T, Povoli, M, Rajteri, M, Pepe, C, Bardalen, E, Manoocheri, F, Summanwar, A, Korpusenko, M, Getz, M N, Ohlckers, P, Ikonen, E & Gran, J 2021, ' High performance predictable quantum efficient detector based on induced-junction photodiodes passivated with SiO 2 /SinX ', Sensors, vol. 21, no. 23, 7807 . https://doi.org/10.3390/s21237807
Sensors (Basel, Switzerland)
Sensors, Vol 21, Iss 7807, p 7807 (2021)مصطلحات موضوعية: Surface passivation, Materials science, Silicon photodetector, Passivation, silicon photodetector, Inversion layer photodiode, Photodetector, Substrate (electronics), TP1-1185, radiometry, Biochemistry, Article, Analytical Chemistry, law.invention, Primary standard, induced-junction, law, Plasma-enhanced chemical vapor deposition, Electrical and Electronic Engineering, Thin film, Radiometry, Instrumentation, surface passivation, Optical power, optical power, primary standard, business.industry, Chemical technology, inversion layer photodiode, PECVD silicon nitride, predictable quantum efficiency, Carrier lifetime, Induced-junction, Atomic and Molecular Physics, and Optics, Photodiode, Optoelectronics, Quantum efficiency, business, Predictable quantum efficiency
وصف الملف: application/pdf
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10دورية أكاديمية
المؤلفون: Naderi, Ali
المصدر: Journal of Computational Electronics. June 2016 15(2):347-357