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1مؤتمر
المؤلفون: Capogreco, E., Arimura, H., Ritzenthaler, R., Brus, S., Oniki, Y., Dupuy, E., Sebaai, F., Radisic, D., Chan, B. T., Zhou, D., Machkaoutsan, V., Yoon, S., Itokawa, H., Yamaguchi, M., Gao, Z., Fazan, P., Chen, Y., Subramanian, S., Ragnarsson, L.-A., Spessot, A., Litta, E. Dentoni, Horiguchi, N.
المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :26.2.1-26.2.4 Dec, 2022
Relation: 2022 IEEE International Electron Devices Meeting (IEDM)
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2مؤتمر
المؤلفون: Ritzenthaler, R., Capogreco, E., Dupuy, E., Arimura, H., Bastos, J. P., Favia, P., Sebaai, F., Radisic, D., Nguyen, V. T. H., Mannaert, G., Chan, B. T., Machkaoutsan, V., Yoon, Y., Itokawa, H., Yamaguchi, M., Chen, Y., Fazan, P., Subramanian, S., Spessot, A., Dentoni Litta, E., Samavedam, S., Horiguchi, N.
المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :306-307 Jun, 2022
Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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3دورية أكاديمية
المؤلفون: Hokazono, A., Itokawa, H., Kusunoki, N., Mizushima, I., Inaba, S., Kawanaka, S., Toyoshima, Y.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 58(5):1302-1310 May, 2011
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4دورية أكاديمية
المؤلفون: Irisawa, T., Okano, K., Horiuchi, T., Itokawa, H., Mizushima, I., Usuda, K., Tezuka, T., Sugiyama, N., Takagi, S.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 56(8):1651-1658 Aug, 2009
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5مؤتمر
المؤلفون: Hokazono, A., Itokawa, H., Mizushima, I., Kawanaka, S., Inaba, S., Toyoshima, Y.
المصدر: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009
Relation: 2009 IEEE International Electron Devices Meeting (IEDM)
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6مؤتمر
المؤلفون: Okamoto, H., Yasutake, N., Kusunoki, N., Adachi, K., Itokawa, H., Miyano, K., Ishida, T., Hokazono, A., Kawanaka, S., Mizushima, I., Azuma, A., Toyoshima, Y.
المصدر: ESSDERC 2008 - 38th European Solid-State Device Research Conference Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European. :326-329 Sep, 2008
Relation: ESSDERC 2008 - 38th European Solid-State Device Research Conference
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7مؤتمرComprehensive study of S/D engineering for 32 nm node CMOS in direct silicon bonded (DSB) technology
المؤلفون: Yasutake, N., Nomachi, A., Itokawa, H., Morooka, T., Zhang, L., Fukushima, T., Harakawa, H., Mizushima, I., Azuma, A., Toyosihma, Y.
المصدر: ESSDERC 2008 - 38th European Solid-State Device Research Conference Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European. :330-333 Sep, 2008
Relation: ESSDERC 2008 - 38th European Solid-State Device Research Conference
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8مؤتمر
المؤلفون: Irisawa, T., Okano, K., Horiuchi, T., Itokawa, H., Mizushima, I., Usuda, K., Tezuka, T., Sugiyama, N., Takagi, S.
المصدر: 2008 IEEE Silicon Nanoelectronics Workshop Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE. :1-2 Jun, 2008
Relation: 2008 IEEE Silicon Nanoelectronics Workshop (SNW)
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9مؤتمر
المؤلفون: Hokazono, A., Itokawa, H., Kusunoki, N., Mizushima, I., Inaba, S., Kawanaka, S., Toyoshima, Y.
المصدر: 2008 Symposium on VLSI Technology VLSI Technology, 2008 Symposium on. :112-113 Jun, 2008
Relation: 2008 Symposium on VLSI Technology
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10مؤتمر
المؤلفون: Okamoto, S., Miyashita, K., Yasutake, N., Okada, T., Itokawa, H., Mizushima, I., Azuma, A., Yoshimura, H., Nakayama, T.
المصدر: 2007 IEEE International Electron Devices Meeting Electron Devices Meeting, 2007. IEDM 2007. IEEE International. :277-280 Dec, 2007
Relation: 2007 IEEE International Electron Devices Meeting
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