المؤلفون: G Baldi1, S Battistoni1, 4, G Attolini1, M Bosi1, C Collini3, S Iannotta1, L Lorenzelli3, R Mosca1, J S Ponraj1, R Verucchi2, V Erokhin1

المصدر: Semiconductor science and technology (Online) 29 (2014): 1–6. doi:10.1088/0268-1242/29/10/104009
info:cnr-pdr/source/autori:G Baldi1, S Battistoni1,4, G Attolini1, M Bosi1, C Collini3, S Iannotta1, L Lorenzelli3, R Mosca1, J S Ponraj1, R Verucchi2 and V Erokhin1/titolo:Logic with memory: and gates made of organic and inorganic memristive devices/doi:10.1088%2F0268-1242%2F29%2F10%2F104009/rivista:Semiconductor science and technology (Online)/anno:2014/pagina_da:1/pagina_a:6/intervallo_pagine:1–6/volume:29

مصطلحات موضوعية: logic, Materials science, Organic devices, Nanotechnology, Heterojunction, Memristor, Conductivity, Condensed Matter Physics, polyaniline, Electronic, Optical and Magnetic Materials, law.invention, aluminum oxide, chemistry.chemical_compound, chemistry, Neuromorphic engineering, law, Polyaniline, Materials Chemistry, Electrical and Electronic Engineering, Gradual increase, memristor, AND gate

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4698c5530a0d28d91edc593c3c41e286
https://doi.org/10.1088/0268-1242/29/10/104009