يعرض 1 - 5 نتائج من 5 نتيجة بحث عن '"J. L. M. Oosthoek"', وقت الاستعلام: 1.08s تنقيح النتائج
  1. 1
    Growth Rate Determination through Automated TEM Image Analysis

    المؤلفون: Karen Attenborough, Robertus A.M. Wolters, Dirk J. Gravesteijn, Bart J. Kooi, J. L. M. Oosthoek, Jeff Th. M. De Hosson

    المساهمون: Zernike Institute for Advanced Materials, Nanostructured Materials and Interfaces

    المصدر: Microscopy and Microanalysis, 16(3), 291-299. Cambridge University Press

    مصطلحات موضوعية: PRAM, phase-change material, Materials science, in situ heating, crystallization, blanket layer, Analytical chemistry, Nucleation, Crystal growth, law.invention, chemistry.chemical_compound, law, Crystallization, Thin film, Silicon oxide, amorphous-crystalline interface, DATA-STORAGE, Instrumentation, KINETICS, GE, TRANSMISSION ELECTRON-MICROSCOPY, IN-SITU, Doping, OPTICAL-PROPERTIES, Amorphous solid, image processing, Crystallography, CHANGE RECORDING FILM, Silicon nitride, chemistry, TEM, growth rate, doped SbTe, AMORPHOUS FILMS, TRANSITION, NUCLEATION

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::901b011653a0847c7b84eae6686e6726
    https://hdl.handle.net/11370/0cbd9db9-a2fd-40b8-ba93-b0f634b8e6ca

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  2. 2
    Charge collection microscopy of in-situ switchable PRAM line cells in a scanning electron microscope: Technique development and unique observations

    المؤلفون: J. L. M. Oosthoek, G. H. ten Brink, Bart J. Kooi, Dirk J. Gravesteijn, R. W. Schuitema

    المساهمون: Zernike Institute for Advanced Materials, Nanostructured Materials and Interfaces

    المصدر: Review of Scientific Instruments, 86(3):033702. AMER INST PHYSICS

    مصطلحات موضوعية: Materials science, PHASE-CHANGE NANOWIRES, Scanning electron microscope, business.industry, Resolution (electron density), MEMORY TECHNOLOGY, Line (electrical engineering), law.invention, Amorphous solid, Characterization (materials science), Optics, law, Microscopy, MODE, Electron microscope, business, Instrumentation, Image resolution

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a8d8326864b52a411b3b9a2733a4dd6b
    https://research.rug.nl/en/publications/bfdf3dcf-8a54-427b-bcd3-1f1f430c51d0

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  3. 3
    Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory

    المؤلفون: J. L. M. Oosthoek, Bart J. Kooi, Dirk J. Gravesteijn, K. Attenborough, F.J. Jedema, G.A.M. Hurkx

    المساهمون: Nanostructured Materials and Interfaces, Zernike Institute for Advanced Materials

    المصدر: Journal of Applied Physics, 110(2):024505. AMER INST PHYSICS

    مصطلحات موضوعية: DYNAMICS, Materials science, business.industry, Doping, General Physics and Astronomy, Nanotechnology, Crystal growth, Activation energy, FILMS, law.invention, Threshold voltage, Amorphous solid, DRIFT, law, Phase (matter), CHALCOGENIDE MATERIALS, Optoelectronics, Crystallization, business, Electron-beam lithography, GE2SB2TE5

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e59e5e6d33430a81bf142e20af83204f
    https://research.rug.nl/en/publications/6fa87bf4-ff8c-428c-8bc6-a43983a832c5

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  4. 4
    Polarity-dependent resistance switching in GeSbTe phase-change thin films

    المؤلفون: Andrew Pauza, Ramanathaswamy Pandian, Pim van den Dool, J. L. M. Oosthoek, George Palasantzas, Bart J. Kooi

    المساهمون: Nanostructured Materials and Interfaces, Zernike Institute for Advanced Materials, Nanotechnology and Biophysics in Medicine (NANOBIOMED)

    المصدر: Applied Physics Letters, 95(25):252109

    مصطلحات موضوعية: Resistive touchscreen, CHALCOGENIDE GLASSES, Materials science, RANDOM-ACCESS MEMORY, Physics and Astronomy (miscellaneous), business.industry, ELECTROLYTES, Pulsed DC, Electrolyte, GeSbTe, IONIC-CONDUCTIVITY, chemistry.chemical_compound, Semiconductor, chemistry, METAL, Electrode, Ionic conductivity, Optoelectronics, Thin film, business, TRANSITION, STORAGE

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6da35296938c868fb0b869b916965e5b
    https://doi.org/10.1063/1.3276272

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  5. 5
    The influence of resistance drift on measurements of the activation energy of conduction for phase-change material in random access memory line cells

    المؤلفون: Dirk J. Gravesteijn, J. L. M. Oosthoek, G. A. M. Hurkx, Bart J. Kooi, Martin Salinga, Daniel Krebs

    المساهمون: Zernike Institute for Advanced Materials, Nanostructured Materials and Interfaces

    المصدر: Journal of Applied Physics, 112(8):084506. AMER INST PHYSICS

    مصطلحات موضوعية: Resistance drift, Random access memory, Materials science, Condensed matter physics, IMPACT, Annealing (metallurgy), Doping, General Physics and Astronomy, Activation energy, Thermal conduction, Phase-change material, Amorphous solid

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4deb98ee81ea1176068f96b3c224dc3
    https://doi.org/10.1063/1.4759239

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