المؤلفون: A. Redaelli, A. Gandolfo, G. Samanni, E. Gomiero, E. Petroni, L. Scotti, A. Lippiello, P. Mattavelli, J. Jasse, D. Codegoni, A. Serafini, R. Ranica, C. Boccaccio, J. Sandrini, R. Berthelon, J.-C. Grenier, O. Weber, D. Turgis, A. Valery, S. Del Medico, V. Caubet, J.-P. Reynard, D. Dutartre, L. Favennec, A. Conte, F. Disegni, M. De Tomasi, A. Ventre, M. Baldo, D. Ielmini, A. Maurelli, P. Ferreira, F. Arnaud, F. Piazza, P. Cappelletti, R. Annunziata, R. Gonella

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 563-568 (2022)

مصطلحات موضوعية: ePCM, reliability, BEOL, 28nm FDSOI, embedded memory, emerging memory, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9743565/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/c2fbeb39b1c14d23a0f92983e7149df3

المؤلفون: C. Ebert, J. Sandrini, B. Spielberger, B. Thiele, U. Hohmann

المصدر: Animal Biodiversity and Conservation, Vol 35, Iss 2 (2012)

مصطلحات موضوعية: Zoology, QL1-991

وصف الملف: electronic resource

Relation: https://www.raco.cat/index.php/ABC/article/view/259212; https://doaj.org/toc/1578-665X; https://doaj.org/toc/2014-928X

URL الوصول: https://doaj.org/article/b6fd68d2a5724320a347dd6916786a02

المؤلفون: J. Lacord, C. Cagli, J. Sandrini

المصدر: Solid-State Electronics. 204:108652

مصطلحات موضوعية: Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8d298bde4bf9c248626b94ed6c422e43
https://doi.org/10.1016/j.sse.2023.108652

المؤلفون: R. Ranica, R. Berthelon, A. Gandolfo, G. Samanni, E. Gomiero, J. Jasse, P. Mattavelli, J. Sandrini, M. Querre, Y. Le-Friec, J. Poulet, V. Caubet, L. Favennec, C. Boccaccio, G. Ghezzi, C. Gallon, JC. Grenier, B. Dumont, O. Weber, A. Villaret, R. Beneyton, N. Cherault, D. Ristoiu, S. Del Medico, O. Kermarrec, JP. Reynard, P. Boivin, A. Souhaite, L. Desvoivres, S. Chouteau, PO. Sassoulas, L. Clement, A. Valery, E. Petroni, D. Turgis, A. Lippiello, L. Scotti, F. Disegni, A. Ventre, D. Ornaghi, M. De Tomasi, A. Maurelli, A. Conte, F. Arnaud, A. Redaelli, R. Annunziata, P. Cappelletti, F. Piazza, P. Ferreira, R. Gonella, E. Ciantar

المصدر: 2021 IEEE International Electron Devices Meeting (IEDM).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::652fcb15ec770ffda0355c498b7b0e9e
https://doi.org/10.1109/iedm19574.2021.9720669

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المؤلفون: D. Alfaro Robayo, L. Grenouillet, N. Castellani, Mathieu Bernard, Etienne Nowak, G. Molas, J. Sandrini, C. Carabasse, L. Hudeley, D. Deleruyelle, J-M. Portal, J. Minguet Lopez, Marc Bocquet, G. Navarro

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), INL - Dispositifs Electroniques (INL - DE), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2021 IEEE International Reliability Physics Symposium (IRPS)
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, France. pp.1-6, ⟨10.1109/IRPS46558.2021.9405195⟩
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405195⟩
IRPS

مصطلحات موضوعية: 010302 applied physics, Reliability theory, OTS, Computer science, 01 natural sciences, Resistive random-access memory, chalcogenide, [SPI]Engineering Sciences [physics], Reliability (semiconductor), Stack (abstract data type), Margin (machine learning), 0103 physical sciences, Electronic engineering, Figure of merit, Crossbar switch, resistive RAM, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, crossbar, operation variability, ComputingMilieux_MISCELLANEOUS, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1a5de3df36259700f72d418140f745a

المؤلفون: M.-C. Cyrille, R. Crochemore, G. Molas, T. Magis, E. Nowak, Jean-Francois Nodin, A. Persico, J. Sandrini, N.-P. Tran, N. Castellani

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), European Project: 783176,WAKeMeUp

المصدر: VLSI-TSA-2020 International Symposium on VLSI Technology, Systems and Applications
VLSI-TSA-2020 International Symposium on VLSI Technology, Systems and Applications, Aug 2020, Hsinchu, Taiwan. pp.33-34, ⟨10.1109/VLSI-TSA48913.2020.9203694⟩
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

مصطلحات موضوعية: Materials science, Annealing (metallurgy), business.industry, Surface treatment, Resistance, chemistry.chemical_element, Voltage measurement, Surface finish, Vapour deposition, Annealing, [SPI]Engineering Sciences [physics], chemistry, Stack (abstract data type), Tin, Electrode, Optoelectronics, Wafer, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Electrodes, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09fc1736aaa7d55d3a098eef1c8b36c5
https://hal-cea.archives-ouvertes.fr/cea-03027403/file/EU006.pdf

المؤلفون: N.P., Tran, J., Sandrini, A., Persico, J.F., Nodin, T., Magis, R., Crochemore, N., Castellani, M.C., Cyrille, G., Molas, E., Nowak

المساهمون: TRAN, Nguyet Phuong, Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

المصدر: 2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Aug 2020, Hsinchu, Taiwan

مصطلحات موضوعية: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS

URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3e561dee591beb6086ae69d3715351e0
https://hal-cea.archives-ouvertes.fr/cea-03022902

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تسجيل الدخول للوصول الكامل.