المؤلفون: Banerjee, Amal^Aff2

المساهمون: Banerjee, Amal^Aff1

المصدر: Semiconductor Devices : Diodes, Transistors, Solar Cells, Charge Coupled Devices and Solid State Lasers. :209-232

المؤلفون: Sanyal, I., Lin, E., Wan, Y., Chen, K., Tu, P., Yeh, P., Chyi, J.

المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:130-136 2021

المؤلفون: Fletcher, A. S. Augustine, Nirmal, D.^{Aff1, IDs1263302101367y_cor2}, Ajayan, J., Arivazhagan, L., Hamza, K. Husna, Murugapandiyan, P.

المصدر: Silicon. 14(11):5941-5949

المؤلفون: Coffie, Robert L.^Aff4

المساهمون: Fay, Patrick, editor^Aff1, Jena, Debdeep, editor^Aff2, Maki, Paul, editor^Aff3

المصدر: High-Frequency GaN Electronic Devices. :5-41

المؤلفون: Indraneel Sanyal, En-Shuo Lin, Yu-Chen Wan, Kun-Ming Chen, Po-Tsung Tu, Po-Chun Yeh, Jen-Inn Chyi

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 130-136 (2021)

مصطلحات موضوعية: AlInGaN, GaN-on-Si, HEMT, JFOM, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9286477/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/b7a90ca0f4994778948b8f1e48b92adf

المؤلفون: P. Murugapandiyan, A. Mohanbabu, V. Rajya Lakshmi, V.N. Ramakrishnan, Arathy Varghese, MOHD Wasim, S. Baskaran, R. Saravana Kumar, V. Janakiraman

المصدر: Journal of Science: Advanced Materials and Devices, Vol 5, Iss 2, Pp 192-198 (2020)

مصطلحات موضوعية: MOS-HEMT, HfO2, JFoM, Microwave applications, Cut-off frequency, Leakage current, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2468217920300332; https://doaj.org/toc/2468-2179

URL الوصول: https://doaj.org/article/648b32a89dfd4688b08028db9d687aa6

المؤلفون: R. Saravana Kumar, S. Baskaran, V. Rajya Lakshmi, P. Murugapandiyan, Arathy Varghese, A. Mohanbabu, V. N. Ramakrishnan, V. Janakiraman, Mohd Wasim

المصدر: Journal of Science: Advanced Materials and Devices, Vol 5, Iss 2, Pp 192-198 (2020)

مصطلحات موضوعية: Power gain, Permittivity, Electron mobility, Materials science, Passivation, Materials Science (miscellaneous), 02 engineering and technology, High-electron-mobility transistor, 010402 general chemistry, 01 natural sciences, Ion, Biomaterials, Microwave applications, lcsh:TA401-492, Breakdown voltage, HfO2, business.industry, Cut-off frequency, Heterojunction, 021001 nanoscience & nanotechnology, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, Leakage current, Ceramics and Composites, JFoM, Optoelectronics, lcsh:Materials of engineering and construction. Mechanics of materials, 0210 nano-technology, business, MOS-HEMT

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2f3ad3af307256cfe7260e7b2d8c8ac
http://www.sciencedirect.com/science/article/pii/S2468217920300332

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