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المؤلفون: Yuan Xie, Jimmy Kan, Mahendra Pakala, Jaesoo Ahn, Chando Park, C. Ching, Seung H. Kang
المصدر: IEEE Transactions on Electron Devices. 64:3639-3646
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Engineering, Magnetoresistance, Dielectric strength, business.industry, Electrical engineering, Time-dependent gate oxide breakdown, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Duty cycle, 0103 physical sciences, Electronic engineering, Breakdown voltage, Torque, Electrical and Electronic Engineering, 0210 nano-technology, business, Voltage
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المؤلفون: C. Ching, Mahendra Pakala, S. Kim, Lin Xue, Liang Shurong, Chando Park, Jimmy Kan, Seung H. Kang, A. Kontos, S. Hassan, Wang Rongjun, Mangesh Bangar, Jaesoo Ahn, H. Chen
المصدر: IEEE Transactions on Magnetics. 53:1-4
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, Temperature sensitivity, Magnetoresistance, Condensed matter physics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Tunnel magnetoresistance, 0103 physical sciences, Perpendicular, Electrical and Electronic Engineering, 0210 nano-technology, Device parameters, Quantum tunnelling
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المؤلفون: Niranjan Khasgiwale, C. Ching, R. Zheng, W. Zhou, Jaesoo Ahn, R. Whig, W. Chen, Mahendra Pakala, P. Agrawal, S. Venkatanarayanan, Wang Rongjun, Todd Egan, Wang Xiaodong, D. Kim, J. Lei, Edward W. Budiarto, X. Tang, C. Zhou, K. Moraes, S. Kumar, Lin Xue, Hsin-Wei Tseng
المصدر: 2019 IEEE 11th International Memory Workshop (IMW).
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, Fabrication, Magnetoresistance, business.industry, Spin-transfer torque, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Metrology, Tunnel magnetoresistance, 0103 physical sciences, Optoelectronics, Wafer, Static random-access memory, 0210 nano-technology, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::11cf5efc7c88fb50f0b8b367b91507c9
https://doi.org/10.1109/imw.2019.8739745 -
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المؤلفون: Seung H. Kang, Hochul Lee, Mahendra Pakala, C. Park, Jaesoo Ahn, C. Ching, Wang Rongjun
المصدر: 2018 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, business.industry, 020208 electrical & electronic engineering, 02 engineering and technology, Integrated circuit, 01 natural sciences, law.invention, Tunnel magnetoresistance, Reliability (semiconductor), CMOS, law, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Breakdown voltage, business, Scaling, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2199c6bd21b19a65e748519298d1f5db
https://doi.org/10.1109/vlsit.2018.8510653 -
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المؤلفون: H. Chen, Liang Shurong, Wang Rongjun, Hsin-Wei Tseng, S. Hassan, Mahendra Pakala, Mangesh Bangar, Lin Xue, C. Ching, Wang Xiaodong, Jaesoo Ahn, James Howarth, Renu Whig, A. Kontos
المصدر: 2018 IEEE Symposium on VLSI Technology.
مصطلحات موضوعية: 010302 applied physics, Materials science, 010308 nuclear & particles physics, business.industry, Process capability, 01 natural sciences, Tunnel magnetoresistance, Stack (abstract data type), 0103 physical sciences, Perpendicular, Optoelectronics, Process optimization, Node (circuits), Cache, business, Pulse-width modulation
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::256baf26d44eb110c8976cab4a9168c9
https://doi.org/10.1109/vlsit.2018.8510642 -
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المؤلفون: Lavinia Nistor, Michel Frei, Mahendra Pakala, Jaesoo Ahn, Lin Xue, Yu Minrui
المصدر: 2018 IEEE International Memory Workshop (IMW).
مصطلحات موضوعية: Non-volatile memory, Resistive touchscreen, Materials science, Etching (microfabrication), Doping, Ferroelectric RAM, Surface smoothness, Semiconductor memory, Engineering physics, Resistive random-access memory
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0164ee60ee32c4475014ee4aeed8dbce
https://doi.org/10.1109/imw.2018.8388840 -
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المؤلفون: Yuan Taur, Dmitry Veksler, Paul C. McIntyre, A. Vais, Qian Xie, Hanping Chen, Jaesoo Ahn, Dennis Lin
المصدر: IEEE Transactions on Electron Devices. 62:813-820
مصطلحات موضوعية: Materials science, Condensed matter physics, business.industry, Semiconductor device modeling, Electrical engineering, Oxide, Conductance, Electronic, Optical and Magnetic Materials, law.invention, Condensed Matter::Materials Science, chemistry.chemical_compound, Two band, Capacitor, Semiconductor, chemistry, law, Electrical and Electronic Engineering, business, Indium gallium arsenide, Quantum tunnelling
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المؤلفون: Jaesoo Ahn, Jimmy Kan, Lin Xue, A. Kontos, Seung H. Kang, Mangesh Bangar, S. Kim, H. Chen, Chando Park, S. Hassan, Wang Rongjun, C. Ching, Liang Shurong, Mahendra Pakala
المصدر: 2016 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, Dielectric strength, business.industry, Electrical engineering, Time-dependent gate oxide breakdown, 02 engineering and technology, 01 natural sciences, Temperature measurement, 020202 computer hardware & architecture, CMOS, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Perpendicular, Breakdown voltage, Optoelectronics, business, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5fc6184c8b304399fc3b2efc8c23bbd2
https://doi.org/10.1109/iedm.2016.7838493 -
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المؤلفون: Paul C. McIntyre, Jaesoo Ahn, Yuan Taur, Hanping Chen
المصدر: IEEE Transactions on Electron Devices. 60:3920-3924
مصطلحات موضوعية: Physics, Analytical chemistry, Oxide, Conductance, Curvature, Capacitance, Molecular physics, Electronic, Optical and Magnetic Materials, Gallium arsenide, Trap (computing), chemistry.chemical_compound, Computer Science::Emerging Technologies, Distribution (mathematics), chemistry, Electrical and Electronic Engineering, Dispersion (chemistry)
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المؤلفون: Jaesoo Ahn, Lin Xue, H. Chen, Mahendra Pakala, C. Ching, Cong Trinh, Mihaela Balseanu, Lavinia Nistor, Jonathan Germain, S. Hassan
المصدر: IEEE Transactions on Magnetics. 50:1-3
مصطلحات موضوعية: Materials science, Magnetoresistance, business.industry, Spin-transfer torque, Nanotechnology, Dielectric, Electronic, Optical and Magnetic Materials, Tunnel magnetoresistance, Optoelectronics, Wafer, Electrical and Electronic Engineering, Reactive-ion etching, business, Current density, Quantum tunnelling