يعرض 1 - 10 نتائج من 252 نتيجة بحث عن '"Jan Sun"', وقت الاستعلام: 1.41s تنقيح النتائج
  1. 1
    مؤتمر
    Nearly Ideal Subthreshold Swing and Delay Reduction of Stacked Nanosheets Using Ultrathin Bodies

    المؤلفون: Tsai, Chung-En, Cheng, Chun-Yi, Huang, Bo-Wei, Lin, Hsin-Cheng, Chou, Tao, Tu, Chien-Te, Liu, Yi-Chun, Jan, Sun-Rong, Chen, Yu-Rui, Hsieh, Wan-Hsuan, Chiu, Kung-Ying, Chueh, Shee-Jier, Liu, C. W.

    المصدر: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :401-402 Jun, 2022

    Relation: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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  2. 2
    مؤتمر
    First Highly Stacked Ge0.95Si0.05 nGAAFETs with Record ION = 110 μA (4100 μA/μm) at VOV=VDS=0.5V and High Gm,max = 340 μS (13000 μS/μm) at VDS=0.5V by Wet Etching

    المؤلفون: Liu, Yi-Chun, Tu, Chien-Te, Tsai, Chung-En, Chen, Yu-Rui, Chen, Jyun-Yan, Jan, Sun-Rong, Huang, Bo-Wei, Chueh, Shee-Jier, Tsen, Chia-Jung, Liu, C. W.

    المصدر: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021

    Relation: 2021 Symposium on VLSI Technology

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  3. 3
    مؤتمر
    Highly Stacked 8 $\mathbf{Ge}_{\boldsymbol{0.9}}\mathbf{Sn}_{\boldsymbol{0.1}}$ Nanosheet pFETs with Ultrathin Bodies (~3nm) and Thick Bodies (~30nm) Featuring the Respective Record $\mathbf{I}_{\mathbf{ON}}/\mathbf{I}_{\mathbf{OFF}}$ of 1.4x107 and Record $\mathbf{I}_{\mathbf{ON}}$ of $\boldsymbol{92}\boldsymbol{\mu}\mathbf{A}$ at $\mathbf{V}_{\mathbf{ov}}=\mathbf{V}_{\mathbf{DS}}=$ -0.5V by CVD Epitaxy and Dry Etching

    المؤلفون: Tsai, Chung-En, Liu, Yi-Chun, Tu, Chien-Te, Huang, Bo-Wei, Jan, Sun-Rong, Chen, Yu-Rui, Chen, Jyun-Yan, Chueh, Shee-Jier, Cheng, Chun-Yi, Tsen, Chia-Jung, Ma, Yichen, Liu, C. W.

    المصدر: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :26.4.1-26.4.4 Dec, 2021

    Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

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  4. 4
    مؤتمر
    Modeling and simulation of TSV induced keep-out zone using silicon data

    المؤلفون: Liu, C. W., Jhih-Yang Yan, Jan, Sun-Rong

    المصدر: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on. :331-333 Oct, 2016

    Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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  5. 5
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

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  6. 6
    مؤتمر
    Comprehensive Thermal SPICE Modeling of FinFETs and BEOL with Layout Flexibility Considering Frequency Dependent Thermal Time Constant, 3D Heat Flows, Boundary/Alloy Scattering, and Interfacial Thermal Resistance with Circuit Level Reliability Evaluation

    المؤلفون: Yan, Jhih-Yang, Chung, Chia-Che, Jan, Sun-Rong, Lin, H. H., Wan, W. K., Yang, M.-T., Liu, C. W.

    المصدر: 2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :113-114 Jun, 2018

    Relation: 2018 IEEE Symposium on VLSI Technology

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  7. 7
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

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  8. 8
    مؤتمر
    Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs

    المؤلفون: Huang, Yu-Shiang, Huang, Chih-Hao, Huang, Chih-Hsiung, Lu, Fang-Liang, Chang, Da-Zhi, Lin, Chung-Yi, Wong, I-Hsieh, Jan, Sun-Rong, Lan, Huang-Siang, Liu, C. W., Huang, Yi-Chiau, Chung, Hua, Chang, Chorng-Ping, Chu, Schubert S., Kuppurao, Satheesh

    المصدر: 2016 IEEE Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2016 IEEE. :132-133 Jun, 2016

    Relation: 2016 IEEE Silicon Nanoelectronics Workshop (SNW)

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  9. 9
    مؤتمر
    Compact modeling and simulation of TSV with experimental verification

    المؤلفون: Yan, Jhih-Yang, Jan, Sun-Rong, Huang, Yi-Chung, Lan, Huang-Siang, Liu, C. W., Huang, Y.-H., Hung, Bigchoug, Chan, K.-T., Huang, Michael, Yang, M.-T.

    المصدر: 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) VLSI Technology, Systems and Application (VLSI-TSA), 2016 International Symposium on. :1-2 Apr, 2016

    Relation: 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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  10. 10
    مؤتمر
    Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs

    المؤلفون: Huang, Yu-Shiang, Huang, Chih-Hsiung, Lu, Fang-Liang, Lin, Chung-Yi, Ye, Hung-Yu, Wong, I-Hsieh, Jan, Sun-Rong, Lan, Huang-Siang, Liu, C. W., Huang, Yi-Chiau, Chung, Hua, Chang, Chorng-Ping, Chu, Schubert S., Kuppurao, Satheesh

    المصدر: 2016 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2016 IEEE International. :33.1.1-33.1.4 Dec, 2016

    Relation: 2016 IEEE International Electron Devices Meeting (IEDM)

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