يعرض 1 - 10 نتائج من 84 نتيجة بحث عن '"Jang, Seung Yup"', وقت الاستعلام: 0.87s تنقيح النتائج
  1. 1
    مؤتمر
    Monolithically Integrated >3kV, 20A 4H-SiC BiDFET Utilizing an Accumulation Mode Channel for Improved Output Characteristics

    المؤلفون: Mancini, Stephen A., Jang, Seung Yup, Binder, Andrew, Floyd, Richard, Kaplar, Robert, Atcitty, Stan, Morgan, Adam J., Sung, Woongje

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :339-342 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  2. 2
    مؤتمر
    A Novel 6.5 kV 4H-SiC MOSFET with a One-Channel Layout

    المؤلفون: Lynch, Justin, Mancini, Steve, deBoer, Skylar, Jang, Seung-Yup, Morgan, Adam J., Lee, Bongmook, Sung, Woongje

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :124-127 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  3. 3
    مؤتمر
    600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MOSFET (L-BiD-JBSFET)

    المؤلفون: Jang, Seung Yup, Mancini, Stephen A., Sung, Woongje

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :335-338 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  4. 4
    مؤتمر
    Improved Blocking and Switching Characteristics of Split-Gate 1.2kV 4H-SiC MOSFET with a Deep P-well

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :350-353 May, 2023

    Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  5. 5
    مؤتمر
    First Demonstration of 600 V 4H-SiC Lateral Bi-Directional Metal-Oxide-Semiconductor Field-Effect Transistor (LBiDMOS)

    المؤلفون: Jang, Seung Yup, Isukapati, Sundar Babu, Kim, Dongyoung, Sung, Woongje

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :5-8 May, 2023

    Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  6. 6
    مؤتمر
    Enhanced Design Architecture to Suppress Leakage Current of High-Voltage (HV) Lateral nMOSFETs in 4H-SiC

    المؤلفون: Isukapati, Sundar Babu, Jang, Seung Yup, Sung, Woongje

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :358-361 May, 2023

    Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  7. 7
    مؤتمر
    Static, Dynamic, and Short-circuit Characteristics of Split-Gate 1.2 kV 4H-SiC MOSFETs

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Mancini, Stephen A, Isukapati, Sundar Babu, Lynch, Justin, Yun, Nick, Morgan, Adam J, Jang, Seung Yup, Sung, Woongje

    المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023

    Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)

    Full Text Finder
    أضف إلى المفضلة
  8. 8
    مؤتمر
    A New Layout Method for Junction Field Effect Transistors (JFETs) on 4H-SiC that Provides a Significant Reduction in On-Resistance

    المؤلفون: Lynch, Justin, Yun, Nick, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :127-131 Nov, 2022

    Relation: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

    Full Text Finder
    أضف إلى المفضلة
  9. 9
    مؤتمر
    A Comparison of Short-Circuit Failure Mechanisms of 1.2 kV 4H-SiC MOSFETs and JBSFETs

    المؤلفون: Kim, Dongyoung, DeBoer, Skylar, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) Wide Bandgap Power Devices & Applications (WiPDA), 2022 IEEE 9th Workshop on. :54-57 Nov, 2022

    Relation: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)

    Full Text Finder
    أضف إلى المفضلة
  10. 10
    مؤتمر
    Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation

    المؤلفون: Kim, Dongyoung, Jang, Seung Yup, Morgan, Adam J., Sung, Woongje

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :217-220 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء