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1دورية أكاديمية
المؤلفون: Daniel Hammer, Eric Evans, Jayson Huber, Katherine Cheng, Kathi Buss
المصدر: Journal of the California Dental Association, Vol 52, Iss 1 (2024)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/1942-4396
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2
المؤلفون: Sridhar Yadala, T. Ip, James Lan, Sharon Huynh, C. Liang, J. Lakshmipathi, Khanh Nguyen, Hung-Szu Lin, D. Pantelakis, Mehrdad Mofidi, Teruhiko Kamei, Long Pham, Siu Chan, Jeffrey W. Lutze, V. Sakhamuri, Jason Li, Jong Hak Yuh, Junnhui Yang, Koichi Kawakami, Kishan Pradhan, Yan Li, P. Kliza, Masaaki Higashitani, James Chan, Khin Htoo, Tai-Yuan Tseng, Alan Li, Yasuyuki Fukuda, Binh Quang Le, Shu-Fen Chang, Raul Adrian Cernea, Khandker N. Quader, Hideo Mukai, Subodh Taigor, Shouchang Tsao, Yingda Dong, Takumi Abe, Farookh Moogat, Fanglin Zhang, H. Nasu, Cynthia Hsu, Jayson Hu, Feng Pan
المصدر: IEEE Journal of Solid-State Circuits. 44:186-194
مصطلحات موضوعية: business.industry, Computer science, Nand flash memory, NAND gate, Data buffer, Integrated circuit, Chip, Flash memory, law.invention, law, Embedded system, Logic gate, Redundancy (engineering), Charge pump, Electrical and Electronic Engineering, business, Computer hardware
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::980db025a0a03d7fcad3f78887bc65af
https://doi.org/10.1109/jssc.2008.2007152
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3
المؤلفون: Jayson Hu, Ali M. Niknejad, Xuemei Xi, Chenming Hu
المصدر: Solid-State Electronics. 50:1740-1743
مصطلحات موضوعية: Engineering, business.industry, Electrical engineering, Gate leakage current, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Tunnel effect, Gate oxide, MOSFET, Materials Chemistry, Electrical and Electronic Engineering, business, Current density, Gate current, Scaling, Leakage (electronics)
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4
المؤلفون: D. Pantelakis, Hung-Szu Lin, K. Kawakamr, P. Kliza, Kishan Pradhan, Shu-Fen Chang, Jason Li, Masaaki Higashitani, Sridhar Yadala, Feng Pan, Jong Park, Jayson Hu, Junhui Yang, Takumi Abe, Yan Li, Khin Htoo, Khanh Nguyen, Farookh Moogat, Fanglin Zhang, Binh Quang Le, V. Sakhamuri, Raul-Adrian Cernea, Siu Chan, H. Mukai, H. Nasu, Cynthia Hsu, Khandker N. Quader, Tai-Yuan Tseng, Yasuyuki Fukuda, Yingda Dong, Shouchang Tsao, Subodh Taigor, Long Pham, Jeffrey W. Lutze, James Chan, A. Li, T. Ip, Teruhiko Kamei, James Lan, J. Lakshmipathi, C. Liang, Mehrdad Mofidi, Sharon Huynh
المصدر: ISSCC
مصطلحات موضوعية: business.industry, Computer science, Factor (programming language), Memory architecture, NAND gate, Line (text file), business, computer, Throughput (business), Computer hardware, Word (computer architecture), Conventional memory, computer.programming_language
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::fbed9141e70c4fcd75fd32d318e69dcc
https://doi.org/10.1109/isscc.2008.4523236
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