يعرض 1 - 10 نتائج من 10 نتيجة بحث عن '"Jin-shun Bi"', وقت الاستعلام: 0.87s تنقيح النتائج
  1. 1
    مؤتمر
    The PDSOI accumulation-mode dynamic threshold pMOS with reversed Schottky barrier

    المؤلفون: Jin-Shun Bi, Chao-He Hai

    المصدر: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on. :75-77 Oct, 2006

    Relation: 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings

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  2. 2
    Investigation of Heavy Ion Irradiation Effects on Charge Trapping Memory Capacitor by C-V Measurement

    المؤلفون: Qi-yu Chen, Xi-rong Yang, Zong-zhen Li, Jin-shun Bi, Kai Xi, Zhen-xing Zhang, Peng-fei Zhai, You-mei Sun, Jie Liu

    المصدر: Chinese Physics B.

    مصطلحات موضوعية: General Physics and Astronomy

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::fc38c85c03a44c382486d4f6e9b72144
    https://doi.org/10.1088/1674-1056/acae78

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  3. 3
    28nm 4Mb 1T-1MTJ STT-MRAM Circuits with Ultra-low Power Read Scheme

    المؤلفون: Jin Shun Bi, Bo Li, Kai Xi, Si Wen Zheng

    المصدر: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).

    مصطلحات موضوعية: Scheme (programming language), Magnetoresistive random-access memory, Ultra low power, Hardware_MEMORYSTRUCTURES, Sense amplifier, Computer science, Reading (computer), Chip, Hardware_GENERAL, Low-power electronics, Electronic engineering, computer, computer.programming_language, Electronic circuit

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7d7cba251e7eb5d041a30e6083fd4512
    https://doi.org/10.1109/icsict49897.2020.9278155

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  4. 4
    PBTI stress-induced 1/f noise in n-channel FinFET*

    المؤلفون: Gang Wang, Jin-Shun Bi, Dan-Yang Chen, Kai Xi

    المصدر: Chinese Physics B. 29:128501

    مصطلحات موضوعية: Noise, Materials science, Acoustics, Stress induced, N channel, General Physics and Astronomy

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::83cfa74f1e5de4a52c9992ab6128691b
    https://doi.org/10.1088/1674-1056/abaee4

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  5. 5
    دورية أكاديمية
    Cryogenic characterisation of 55 nm SONOS charge-trapping memory in AC and DC modes.

    المؤلفون: Lin-Jie Fan, Jin-Shun Bi, Yan-Nan Xu, Kai Xi, Yao Ma, Ming Liu, Majumdar, Sandip

    المصدر: Electronics Letters (Wiley-Blackwell); 2/20/2020, Vol. 56 Issue 4, p199-201, 3p, 2 Diagrams, 1 Chart, 2 Graphs

    مصطلحات موضوعية: POOLE-Frenkel effect, THRESHOLD voltage, LOW temperatures, TEMPERATURE effect, MEMORY, NITRIDES

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  6. 6
    مؤتمر
    Improved radiation response of PDSOI LBBC BUSFET.

    المؤلفون: Jin-Shun Bi, Chao-He Hai, Zheng-Sheng Han

    المصدر: 2010 International Workshop on Junction Technology (IWJT); 2010, p1-4, 4p

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  7. 7
    دورية أكاديمية
    Total Ionization Dose Effects on Charge Storage Capability of Al2O3/HfO2/Al2O3-Based Charge Trapping Memory Cell.

    المؤلفون: Yan-Nan Xu, Jin-Shun Bi, Gao-Bo Xu, Bo Li, Kai Xi, Ming Liu, Hai-Bin Wang, Li Luo

    المصدر: Chinese Physics Letters; Oct2018, Vol. 35 Issue 11, p1-1, 1p

    مصطلحات موضوعية: IONIZATION (Atomic physics), CHARGE storage diodes, ION traps, MILITARY missions, X-rays

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  8. 8
    دورية أكاديمية
    Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory.

    المؤلفون: Jin-Shun Bi, Kai Xi, Bo Li, Hai-Bin Wang, Lan-Long Ji, Jin Li, Ming Liu

    المصدر: Chinese Physics B; Sep2018, Vol. 27 Issue 9, p1-1, 1p

    مصطلحات موضوعية: COMPUTER storage devices, HEAVY ions, LOGIC circuits, ENERGY transfer, NOR gates

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  9. 9
    دورية أكاديمية
    Total Ionizing Dose Effects of 55-nm Silicon-Oxide-Nitride-Oxide-Silicon Charge Trapping Memory in Pulse and DC Modes.

    المؤلفون: Mei Li, Jin-Shun Bi, Yan-Nan Xu, Bo Li, Kai Xi, Hai-Bin Wang, Jing-Liu, Jin-Li, Lan-Long Ji, Li Luo, Ming Liu

    المصدر: Chinese Physics Letters; Jun2018, Vol. 35 Issue 7, p1-1, 1p

    مصطلحات موضوعية: SILICON oxide, THRESHOLD voltage, RADIATION doses, DIRECT currents, ELECTRIC charge

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  10. 10
    دورية أكاديمية
    Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET.

    المؤلفون: Jin-Shun Bi, Chuan-Bin Zeng, Lin-Chun Gao, Gang Liu, Jia-Jun Luo, Zheng-Sheng Han

    المصدر: Chinese Physics B; Aug2014, Vol. 23 Issue 8, p1-1, 1p

    مصطلحات موضوعية: SILICON-on-insulator technology, METAL oxide semiconductor field-effect transistors, LASER beams, ASTRIONICS, ELECTRIC potential, SINGLE event effects, ELECTRIC charge

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