يعرض 1 - 10 نتائج من 20 نتيجة بحث عن '"Jinq-Min LIn"', وقت الاستعلام: 0.81s تنقيح النتائج
  1. 1
    دورية أكاديمية
    On the mode-coupling formation of complex modes in a nonreciprocal finline

    المؤلفون: Tzuang, C.-K.C., Jinq-Min Lin

    المصدر: IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 41(8):1400-1408 Aug, 1993

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  2. 2
    The Impact of Nano CMOS Device Scaling on High Frequency Performance and Optimization Principle for fMAX Boost

    المؤلفون: Adhi Cahyo Wijaya, Jinq-Min Lin, Jyh-Chyurn Guo

    المصدر: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::38bef106f92f824abe72cadb163b0259
    https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134106

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  3. 3
    The Impact of Nano Device Parameters Variations and Scaling Strategy for High Frequency Performance Enhancement in Nanoscale CMOS

    المؤلفون: Adhi Cahyo Wijaya, Jinq-Min Lin, Jyh-Chyurn Guo

    المصدر: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::19bda853df55e0cf0ce3591015fb37cc
    https://doi.org/10.1109/vlsi-tsa54299.2022.9770962

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  4. 4
    A New Cascode Design with Enhanced Power gain and Bandwidth for Application in mm-Wave Amplifier

    المؤلفون: Jinq-Min Lin, Adhi Cahyo Wijaya, Jyh-Chyurn Guo

    المصدر: 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1caed63551472f9d128ece59ad1d835c
    https://doi.org/10.1109/vlsi-tsa54299.2022.9771022

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  5. 5
    مؤتمر
    A 2 ns 1 Mb CMOS mask ROM

    المؤلفون: Jinq-Min LIn, Ken, M.W.D., Hsiao-Chin Tuan, Kung, C.H., Liao, I.-C., Kuo-Shu Tseng, Jyh-Jong Lin

    المصدر: International Symposium on VLSI Technology, Systems and Applications, VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on. :36-40 1989

    Relation: International Symposium on VLSI Technology, Systems and Applications,

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  6. 6
    New Observation and Mechanism of Flicker Noise and Random Telegraph Noise in Sub-40nm SiC Strained nMOSFETs

    المؤلفون: Jyh-Chyurn Guo, Adhi Cahyo Wijaya, Jinq-Min Lin

    المصدر: Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1d2c632416aafa33d4ae665f7e59d199
    https://doi.org/10.7567/ssdm.2020.a-3-04

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  7. 7
    Sub-35 nm SiC Strained nMOSFETs with Super-400 GHz fT for mm-wave CMOS Design

    المؤلفون: Jyh-Chyurn Guo, AdhiCahyo Wijaya, Jinq-Min Lin

    المصدر: Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::57e86cf34549719aa21f34daf995b402
    https://doi.org/10.7567/ssdm.2020.a-3-03

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  8. 8
    The Impact of Layout Dependent Intrinsic Parasitic RLC on High Frequency Performance in 3T and 4T Multi-finger nMOSFETs

    المؤلفون: Jyh-Chyurn Guo, Jinq-Min Lin, Jyun-Rong Ou

    المصدر: 2019 IEEE MTT-S International Microwave Symposium (IMS).

    مصطلحات موضوعية: 010302 applied physics, Materials science, Noise measurement, Logic gate, 0103 physical sciences, MOSFET, Electronic engineering, RLC circuit, Performance improvement, 01 natural sciences, Device parameters

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::54dcc58ce1027d21d9f0e9ba13aee49d
    https://doi.org/10.1109/mwsym.2019.8700891

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  9. 9
    New Observation and Analysis of Layout Dependent Effects in Sub-40nm Multi-Ring and Multi-Finger nMOSFETs for High Frequency Applications

    المؤلفون: Jinq-Min Lin, Jyh-Chyurn Guo, Zu-Cheng Li

    المصدر: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).

    مصطلحات موضوعية: Physics, Ring (mathematics), CMOS, business.industry, Transconductance, Optoelectronics, business, Device parameters

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a75479a064d6fd4ee46fe533812dc784
    https://doi.org/10.1109/vlsi-tsa.2019.8804636

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  10. 10
    A Novel Approach to Localize the Channel Temperature Induced by the Self-heating Effect in 14nm High-k Metal-gate FinFET

    المؤلفون: Hsuan-Han Chen, Osbert Cheng, Steve S. Chung, T. P. Chen, Jinq-Min Lin, E-Ray Hsieh, M. J. Jiang, T. J. Chen, Y. H. Yeah

    المصدر: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).

    مصطلحات موضوعية: Materials science, Phonon scattering, Condensed matter physics, Equivalent series resistance, Spice, Saturation velocity, Static random-access memory, Temperature measurement, High-κ dielectric, Communication channel

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::fc039da37a67abf91f08a15176d67ed5
    https://doi.org/10.1109/edtm.2018.8421479

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