المؤلفون: Qiang Wang, Yachuan Wang, Yankun Wang, Luyue Jiang, Jinyan Zhao, Zhitang Song, Jinshun Bi, Libo Zhao, Zhuangde Jiang, Jutta Schwarzkopf, Shengli Wu, Bin Zhang, Wei Ren, Sannian Song, Gang Niu

المصدر: InfoMat, Vol 6, Iss 8, Pp n/a-n/a (2024)

مصطلحات موضوعية: electronic synapses, neuromorphic computing, PCRAM, Ru‐doped Ge2Sb2Te5, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2567-3165

URL الوصول: https://doaj.org/article/c1e51ddd2fca4efe8267741d1d054829

المؤلفون: Chongyang Hou, Shuye Zhang, Rui Liu, Thomas Gemming, Alicja Bachmatiuk, Hongbin Zhao, Hao Jia, Shirong Huang, Weijia Zhou, Jian‐Bin Xu, Jinbo Pang, Mark H. Rümmeli, Jinshun Bi, Hong Liu, Gianaurelio Cuniberti

المصدر: InfoMat, Vol 6, Iss 7, Pp n/a-n/a (2024)

مصطلحات موضوعية: 2D materials, biomedical healthcare, energy storage and conversion, flexible electronics, heterostructures, sensors, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2567-3165

URL الوصول: https://doaj.org/article/d11f6b085d3c4738afc05a95fbba2dc6

المؤلفون: Kai, Xi, Feng, Zhang, Jin, Li, Lanlong, Ji, Cong, Fang, Jing, Liu, Ming, Liu, Jinshun, Bi

المصدر: 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2017 IEEE 24th International Symposium on the. :1-4 Jul, 2017

Relation: 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

المؤلفون: Haohao Zhang, Jinshun Bi, Yuan Duan, Yannan Xu, Ming Liu

المصدر: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on. :1194-1196 Oct, 2016

Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

المؤلفون: Jinshun Bi, Jin Li, Lanlong Ji, Hongyang Hu, Ming Liu

المصدر: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on. :1200-1202 Oct, 2016

Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

المؤلفون: Ziming Xu, Jinshun Bi, Mengxin Liu, Yu Zhang, Baihong Chen, Zijian Zhang

المصدر: Micromachines, Vol 14, Iss 12, p 2207 (2023)

مصطلحات موضوعية: emerging memory, non-volatility, low-energy switching, resonant tunneling structure, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/14/12/2207; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/5c38d6a7049e44fda4683a2fe7dc2c7c

المؤلفون: Qiang Wang, Gang Niu, Ruobing Wang, Ren Luo, Zuo-Guang Ye, Jinshun Bi, Xi Li, Zhitang Song, Wei Ren, Sannian Song

المصدر: Journal of Materiomics, Vol 8, Iss 2, Pp 382-391 (2022)

مصطلحات موضوعية: Programmable synapse, Synaptic simulation, PCRAM, C-doped Ge2Sb2Te5, Electronic synapse, Materials of engineering and construction. Mechanics of materials, TA401-492

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2352847821001210; https://doaj.org/toc/2352-8478

URL الوصول: https://doaj.org/article/09ece65b6d5b410982e9c12afd5ec63b

المؤلفون: I. Yu. Lovshenko, A. Yu. Voronov, P. S. Roshchenko, R. E. Ternov, Ya. D. Galkin, A. V. Kunts, V. R. Stempitsky, Jinshun Bi

المصدر: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 8, Pp 81-86 (2022)

مصطلحات موضوعية: hemt, gaas, proton fluence, displacement effects, nonionizing energy loss, simulation, Electronics, TK7800-8360

وصف الملف: electronic resource

Relation: https://doklady.bsuir.by/jour/article/view/3250; https://doaj.org/toc/1729-7648

URL الوصول: https://doaj.org/article/90674db11cc94aa191230d8e13bcc40f

المؤلفون: Lin-Shi, Xuefang, Allard, Bruno, Jinshun Bi, Bo Li

المصدر: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-3 Oct, 2014

Relation: 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)

المؤلفون: Jianjian Wang, Jinshun Bi, Yannan Xu, Gang Niu, Mengxin Liu, Viktor Stempitsky

المصدر: Nanomaterials, Vol 13, Iss 4, p 638 (2023)

مصطلحات موضوعية: HfO2-based FeFET, charge trapping, ferroelectric switching, memory window, pulse amplitude, pulse width, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/13/4/638; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/50fe6a0261c743c3a19d4f1201a324e9