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1دورية أكاديمية
المؤلفون: Qiang Wang, Yachuan Wang, Yankun Wang, Luyue Jiang, Jinyan Zhao, Zhitang Song, Jinshun Bi, Libo Zhao, Zhuangde Jiang, Jutta Schwarzkopf, Shengli Wu, Bin Zhang, Wei Ren, Sannian Song, Gang Niu
المصدر: InfoMat, Vol 6, Iss 8, Pp n/a-n/a (2024)
مصطلحات موضوعية: electronic synapses, neuromorphic computing, PCRAM, Ru‐doped Ge2Sb2Te5, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2567-3165
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2دورية أكاديمية
المؤلفون: Chongyang Hou, Shuye Zhang, Rui Liu, Thomas Gemming, Alicja Bachmatiuk, Hongbin Zhao, Hao Jia, Shirong Huang, Weijia Zhou, Jian‐Bin Xu, Jinbo Pang, Mark H. Rümmeli, Jinshun Bi, Hong Liu, Gianaurelio Cuniberti
المصدر: InfoMat, Vol 6, Iss 7, Pp n/a-n/a (2024)
مصطلحات موضوعية: 2D materials, biomedical healthcare, energy storage and conversion, flexible electronics, heterostructures, sensors, Materials of engineering and construction. Mechanics of materials, TA401-492, Information technology, T58.5-58.64
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2567-3165
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3مؤتمر
المؤلفون: Kai, Xi, Feng, Zhang, Jin, Li, Lanlong, Ji, Cong, Fang, Jing, Liu, Ming, Liu, Jinshun, Bi
المصدر: 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2017 IEEE 24th International Symposium on the. :1-4 Jul, 2017
Relation: 2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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4مؤتمر
المؤلفون: Haohao Zhang, Jinshun Bi, Yuan Duan, Yannan Xu, Ming Liu
المصدر: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on. :1194-1196 Oct, 2016
Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
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5مؤتمر
المؤلفون: Jinshun Bi, Jin Li, Lanlong Ji, Hongyang Hu, Ming Liu
المصدر: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2016 13th IEEE International Conference on. :1200-1202 Oct, 2016
Relation: 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
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6دورية أكاديمية
المؤلفون: Ziming Xu, Jinshun Bi, Mengxin Liu, Yu Zhang, Baihong Chen, Zijian Zhang
المصدر: Micromachines, Vol 14, Iss 12, p 2207 (2023)
مصطلحات موضوعية: emerging memory, non-volatility, low-energy switching, resonant tunneling structure, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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7دورية أكاديمية
المؤلفون: Qiang Wang, Gang Niu, Ruobing Wang, Ren Luo, Zuo-Guang Ye, Jinshun Bi, Xi Li, Zhitang Song, Wei Ren, Sannian Song
المصدر: Journal of Materiomics, Vol 8, Iss 2, Pp 382-391 (2022)
مصطلحات موضوعية: Programmable synapse, Synaptic simulation, PCRAM, C-doped Ge2Sb2Te5, Electronic synapse, Materials of engineering and construction. Mechanics of materials, TA401-492
وصف الملف: electronic resource
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8دورية أكاديمية
المؤلفون: I. Yu. Lovshenko, A. Yu. Voronov, P. S. Roshchenko, R. E. Ternov, Ya. D. Galkin, A. V. Kunts, V. R. Stempitsky, Jinshun Bi
المصدر: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 8, Pp 81-86 (2022)
مصطلحات موضوعية: hemt, gaas, proton fluence, displacement effects, nonionizing energy loss, simulation, Electronics, TK7800-8360
وصف الملف: electronic resource
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9مؤتمر
المؤلفون: Lin-Shi, Xuefang, Allard, Bruno, Jinshun Bi, Bo Li
المصدر: 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2014 12th IEEE International Conference on. :1-3 Oct, 2014
Relation: 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT)
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10دورية أكاديمية
المؤلفون: Jianjian Wang, Jinshun Bi, Yannan Xu, Gang Niu, Mengxin Liu, Viktor Stempitsky
المصدر: Nanomaterials, Vol 13, Iss 4, p 638 (2023)
مصطلحات موضوعية: HfO2-based FeFET, charge trapping, ferroelectric switching, memory window, pulse amplitude, pulse width, Chemistry, QD1-999
وصف الملف: electronic resource