المؤلفون: Wang, Li-Fan, Jin, Dong-Yue, Zhang, Wan-Rong, Chen, Rui, Guo, Bin, Chen, Hu, Liu, Hao

المصدر: 2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM) Integrated Circuits and Microsystems (ICICM), 2018 IEEE 3rd International Conference on. :56-59 Nov, 2018

Relation: 2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM)

المؤلفون: Coffie, Robert L.^Aff4

المساهمون: Fay, Patrick, editor^Aff1, Jena, Debdeep, editor^Aff2, Maki, Paul, editor^Aff3

المصدر: High-Frequency GaN Electronic Devices. :5-41

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المؤلفون: Tsou, C., Lin, C., Lian, Y., Hsu, S.S.H.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 62(8):2675-2678 Aug, 2015

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المؤلفون: Preeti Singh, Manoj Saxena, Mridula Gupta, Vandana Kumari

المصدر: Journal of Computational Electronics. 20:556-567

مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Terahertz radiation, Gate length, Gate insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, Dual gate, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Johnson's figure of merit, Modeling and Simulation, 0103 physical sciences, Figure of merit, Optoelectronics, Breakdown voltage, Electrical and Electronic Engineering, 0210 nano-technology, business, V band

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5524822043090dc67bb4f683a3049683
https://doi.org/10.1007/s10825-020-01604-4

المؤلفون: Jen-Inn Chyi, Po-Chun Yeh, Kun-Ming Chen, Indraneel Sanyal, Yu-Chen Wan, Po-Tsung Tu, En-Shuo Lin

المصدر: IEEE Journal of the Electron Devices Society. 9:130-136

مصطلحات موضوعية: 010302 applied physics, Power gain, Materials science, Condensed matter physics, Silicon, 020208 electrical & electronic engineering, chemistry.chemical_element, Gallium nitride, 02 engineering and technology, High-electron-mobility transistor, Substrate (electronics), 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Johnson's figure of merit, chemistry, Electrical resistivity and conductivity, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Breakdown voltage, Electrical and Electronic Engineering, Biotechnology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5beac18046d09be34fab7cfe9e48f484
https://doi.org/10.1109/jeds.2020.3043279

المؤلفون: Yue Hao, Hengshuang Zhang, Jiejie Zhu, Meng Zhang, Minhan Mi, Yunlong He, Bin Hou, Yang Lu, Xiaohua Ma, Qing Zhu, Ling Lv, Xiaowei Zhou, Lixiang Chen, Ling Yang

المصدر: IEEE Electron Device Letters. 38:1563-1566

مصطلحات موضوعية: 010302 applied physics, Materials science, Condensed matter physics, Passivation, business.industry, Transconductance, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Source field, Cutoff frequency, Electronic, Optical and Magnetic Materials, Johnson's figure of merit, 0103 physical sciences, Figure of merit, Breakdown voltage, Electrical and Electronic Engineering, 0210 nano-technology, business, Sheet resistance

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::dfa9b72dcdf76c76e63945e9a6358b45
https://doi.org/10.1109/led.2017.2757523

المؤلفون: Guifeng Chen, Xiaowan Dai, Yong Wang, Nan Hu, Hongkun Cai, Dexian Zhang

المصدر: Solar Energy Materials and Solar Cells. 161:382-387

مصطلحات موضوعية: Materials science, Renewable Energy, Sustainability and the Environment, business.industry, Photovoltaic system, 02 engineering and technology, Air mass (solar energy), 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, 0104 chemical sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Johnson's figure of merit, Optics, Thermophotovoltaic, law, Solar cell, Figure of merit, Quantum efficiency, Thin film, 0210 nano-technology, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::64cb0de7b817932ecb5e25222aa93bb4
https://doi.org/10.1016/j.solmat.2016.12.014

المؤلفون: Hu Chen, Bin Guo, Li-Fan Wang, Dongyue Jin, Hao Liu, Wanrong Zhang, Rui Chen

المصدر: 2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM).

مصطلحات موضوعية: Materials science, business.industry, Heterojunction bipolar transistor, Silicon on insulator, Capacitance, Cutoff frequency, Silicon-germanium, chemistry.chemical_compound, Johnson's figure of merit, chemistry, Optoelectronics, Breakdown voltage, Figure of merit, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2c2df6dc941228dd373bf1ace8c373d2
https://doi.org/10.1109/icam.2018.8596480