-
1
-
2
المؤلفون: Quentin Rafhay, Gerard Ghibaudo, Antoine Cros, Jean-Baptiste Henry, Julien Rosa
المساهمون: STMicroelectronics [Crolles] (ST-CROLLES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), CIFRE ST, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
المصدر: 2017 ICMTS Proceedings
2017 International Conference of Microelectronic Test Structures (ICMTS)
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.68-72, ⟨10.1109/ICMTS.2017.7954269⟩مصطلحات موضوعية: 010302 applied physics, Engineering, model, Access resistance, business.industry, Electrical engineering, Silicon on insulator, 02 engineering and technology, Function (mathematics), 021001 nanoscience & nanotechnology, 01 natural sciences, FDSOI, Logic gate, 0103 physical sciences, MOSFET, Electronic engineering, Extraction (military), parameters extraction methodology, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c54d75372d89c11b8969dd6f4d228eb
https://doi.org/10.1109/icmts.2017.7954269 -
3
المؤلفون: Denis Rideau, Antoine Cros, Gerard Ghibaudo, Julien Rosa, A. Soussou, Sebastien Haendler, C. Diouf
المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Géosciences Paris Sud (GEOPS), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
المصدر: Solid-State Electronics
Solid-State Electronics, Elsevier, 2013, 86, pp.45-50. ⟨10.1016/j.sse.2013.04.024⟩مصطلحات موضوعية: Materials science, Infrasound, Gate stack, chemistry.chemical_element, Germanium, 02 engineering and technology, Dielectric, 01 natural sciences, Coulomb scattering, 0103 physical sciences, Materials Chemistry, Electronic engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Phonon scattering, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry, Optoelectronics, 0210 nano-technology, Tin, business
-
4
المؤلفون: Gerard Ghibaudo, G. Bidal, Flore Kergomard, A. Bajolet, Antoine Cros, Cheikh Diouf, Julien Rosa, R.A. Bianchi, Lama Rahhal
المساهمون: Science et Ingénierie des Matériaux et Procédés (SIMaP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)
المصدر: Solid-State Electronics
Solid-State Electronics, Elsevier, 2013, 85, pp.15-22. ⟨10.1016/j.sse.2013.03.001⟩مصطلحات موضوعية: Materials science, chemistry.chemical_element, Germanium, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, 01 natural sciences, law.invention, law, 0103 physical sciences, MOSFET, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Materials Chemistry, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Metal gate, ComputingMilieux_MISCELLANEOUS, High-κ dielectric, 010302 applied physics, business.industry, 020208 electrical & electronic engineering, Transistor, Electrical engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, Gain factor, chemistry, Optoelectronics, business, Hardware_LOGICDESIGN, Communication channel
-
5
المؤلفون: Jean-Baptiste Henry, Quentin Rafhay, Gerard Ghibaudo, Julien Rosa, Antoine Cros
المساهمون: STMicroelectronics [Crolles] (ST-CROLLES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), CIFRE ST, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA)
المصدر: 2016 ICMTS Proceedings
2016 International Conference on Microelectronic Test Structures (ICMTS)
2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, Japan. pp.70-75, ⟨10.1109/ICMTS.2016.7476177⟩مصطلحات موضوعية: Engineering, Access resistance, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, law.invention, law, 0103 physical sciences, MOSFET, Phenomenological model, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Extraction (military), [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 010302 applied physics, model, business.industry, Transistor, Electrical engineering, parameter extraction methodology, Gate voltage, Kelvin structures, Parasitic element, FD-SOI, business, Hardware_LOGICDESIGN
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b98c2361f885d276c492749914ef0b1
https://hal.archives-ouvertes.fr/hal-01959130 -
6
المؤلفون: A. Bajolet, Stephane Ricq, Lama Rahhal, Gerard Ghibaudo, Julien Rosa, J. P. Manceau, Sebastien Lassere
المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), IBM, Crolles, Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Université Grenoble Alpes (UGA)
المصدر: Solid-State Electronics
Solid-State Electronics, Elsevier, 2015, 108, pp.53-60. ⟨10.1016/j.sse.2014.12.006⟩مصطلحات موضوعية: Materials science, Transconductance, Oxide, β, 02 engineering and technology, 20 nm Gate-Last, 01 natural sciences, chemistry.chemical_compound, 28 nm Gate-First EOT (Tox), 0103 physical sciences, Materials Chemistry, Observation point, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Metal gate, Rsd, High-κ dielectric, 010302 applied physics, ID, Vt, Equivalent series resistance, business.industry, Electrical engineering, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Threshold voltage, Mismatch, CMOS, chemistry, Optoelectronics, 0210 nano-technology, business
-
7
المؤلفون: P. Normandon, Franck Arnaud, Yann Carminati, Antoine Cros, David Petit, Julien Rosa, Frederic Monsieur
المصدر: Proceedings of the 2015 International Conference on Microelectronic Test Structures.
مصطلحات موضوعية: Materials science, Silicon, Hybrid silicon laser, business.industry, Capacitive sensing, Transistor, chemistry.chemical_element, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, law.invention, chemistry, Hardware_GENERAL, law, Logic gate, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Optoelectronics, Wafer, Sensitivity (control systems), business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::71348888debe0fa848ff95c18266776a
https://doi.org/10.1109/icmts.2015.7106110 -
8
المؤلفون: S. Joblot, C. De-Buttet, Sébastien Petitdidier, F. Abbate, C. Jenny, Didier Celi, B. Ramadout, Thomas Quemerais, Sebastien Haendler, Laurent Favennec, Daniel Gloria, O. Robin, C. Richard, E. Canderle, B. Borot, K. Haxaire, N. Derrier, Remi Beneyton, Julien Rosa, G. Ribes, O. Saxod, P. Brun, Y. Campidelli, Pascal Chevalier, Cedric Durand, A. Montagne, Francois Leverd, G. Imbert, Olivier Gourhant, M. Guillermet, E. Gourvest, L. Berthier, Clement Tavernier, J. Cossalter, M. Buczko, C. Deglise, Mickael Gros-Jean, C. Julien, Jean-Damien Chapon, K. Courouble, D. Ney, G. Avenier, Patrick Maury, Y. Carminati, R. Bianchini, F. Foussadier
المصدر: 2014 IEEE International Electron Devices Meeting.
مصطلحات موضوعية: Bit cell, Materials science, business.industry, Heterojunction bipolar transistor, Electrical engineering, Ring oscillator, BiCMOS, Inductor, law.invention, Capacitor, CMOS, law, Extremely high frequency, Optoelectronics, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1a267063e241381b03eefae310424668
https://doi.org/10.1109/iedm.2014.7046978 -
9
المؤلفون: Lama Rahhal, J. P. Manceau, A. Bajolet, Gerard Ghibaudo, Sebastien Lassere, Stephane Ricq, Julien Rosa
المساهمون: STMicroelectronics [Crolles] (ST-CROLLES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), IBM, Crolles
المصدر: 2014 ULIS Proceedings
2014 15th International Conference on Ultimate Integration on Silicon (ULIS)
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.133-136, ⟨10.1109/ULIS.2014.6813916⟩مصطلحات موضوعية: Materials science, Offset (computer science), Vt, 20nm Gate-first, business.industry, Electrical engineering, β, Tox, CMOS, 28nm Gate-last, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, mismatch
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::008f7512935ce45695083d6e88138f65
https://hal.archives-ouvertes.fr/hal-02048981 -
10
المؤلفون: Julien Rosa, A. Bajolet, Lama Rahhal, Guillaume Bertrand, Gerard Ghibaudo
المساهمون: STMicroelectronics [Crolles] (ST-CROLLES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
المصدر: 2014 ICMTS Proceedings
2014 International Conference on Microelectronic Test Structures (ICMTS)
2014 International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.238-242, ⟨10.1109/ICMTS.2014.6841499⟩مصطلحات موضوعية: Materials science, drain voltage, Silicon on insulator, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, individual mismatch constants, SOI transistors, 01 natural sciences, law.invention, law, 0103 physical sciences, MOSFET, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, cascode configuration, 010302 applied physics, business.industry, Lateral Drain Extended MOS (LDEMOS), 020208 electrical & electronic engineering, Transistor, Electrical engineering, Cascode, business, mismatch, Hardware_LOGICDESIGN, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::742cc789766d9357121a7cd924365dd1
https://doi.org/10.1109/icmts.2014.6841499
