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المؤلفون: K.-Y. Roy Wong, Chen Po-Chih, C. B. Wu, Ching-Ray Chen, C. W. Hsiung, Ming-Huei Lin, F. J. Yang, Liao Yan-Jie, M. W. Tsai, Yani Lai, Chiu Hsien-Kuang, Tom Tsai, Man-Ho Kwan, Sheng-Da Liu, Burn Jeng Lin, Chang Yu-Chi, Jan-Wen You, Alex Kalnitsky, Chen-Shien Chen, M.-H. Chang, J. L. Yu, L. Y. Tsai, Yu-Syuan Lin, P.-C. Liu, Ru-Yi Su, Fu-Wei Yao, H. C. Tuan, L. C. Chen, Haw-Yun Wu, K.-L. Chiu, Chia-Shiung Tsai, Chung-Yi Yu, S.-P. Wang, G. P. Lansbergen, Chiang Chen-Hao
المصدر: 2015 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: Materials science, business.industry, Transistor, Schottky diode, Gallium nitride, Capacitance, law.invention, chemistry.chemical_compound, chemistry, law, Logic gate, Optoelectronics, business, MISFET, AND gate, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b7faa0d215059670d3d4fc905d6e081b
https://doi.org/10.1109/iedm.2015.7409663