يعرض 1 - 10 نتائج من 29 نتيجة بحث عن '"Kabuyanagi, Shoichi"', وقت الاستعلام: 1.30s تنقيح النتائج
  1. 1
    مؤتمر
    Emerging Non-Volatile Memory and Thin-Film Transistor Technologies for Future 3D-LSI

    المؤلفون: Saitoh, Masumi, Fujii, Shosuke, Oda, Minoru, Yamaguchi, Marina, Kabuyanagi, Shoichi, Yoshimura, Yoko, Ota, Kensuke, Sakuma, Kiwamu, Kamimuta, Yuuichi

    المصدر: 2018 48th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2018 48th European. :138-141 Sep, 2018

    Relation: ESSDERC 2018 - 48th European Solid-State Device Research Conference (ESSDERC)

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  2. 2
    مؤتمر
    Improved State Stability of HfO2 Ferroelectric Tunnel Junction by Template-Induced Crystallization and Remote Scavenging for Efficient in-Memory Reinforcement Learning

    المؤلفون: Fujii, Shosuke, Yamaguchi, Marina, Kabuyanagi, Shoichi, Ota, Kensuke, Saitoh, Masumi

    المصدر: 2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020

    Relation: 2020 IEEE Symposium on VLSI Technology

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  3. 3
    مؤتمر
    HAXPES evaluation of ferroelectric HfSiO MIM capacitor

    المؤلفون: Usuda, Koji, Kamimuta, Yuuichi, Kabuyanagi, Shoichi, Yoshiki, Masahiko, Tomita, Mitsuhiro, Saitoh, Masumi

    المصدر: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2018 IEEE 2nd. :316-318 Mar, 2018

    Relation: 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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  4. 4
    مؤتمر
    In-memory Reinforcement Learning with Moderately-Stochastic Conductance Switching of Ferroelectric Tunnel Junctions

    المؤلفون: Berdan, Radu, Marukame, Takao, Kabuyanagi, Shoichi, Ota, Kensuke, Saitoh, Masumi, Fujii, Shosuke, Deguchi, Jun, Nishi, Yoshifumi

    المصدر: 2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T22-T23 Jun, 2019

    Relation: 2019 Symposium on VLSI Technology

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  5. 5
    مؤتمر
    Impact of specific failure mechanisms on endurance improvement for HfO2-based ferroelectric tunnel junction memory

    المؤلفون: Yamaguchi, Marina, Fujii, Shosuke, Kamimuta, Yuuichi, Kabuyanagi, Shoichi, Ino, Tsunehiro, Nakasaki, Yasushi, Takaishi, Riichiro, Ichihara, Reika, Saitoh, Masumi

    المصدر: 2018 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2018 IEEE International. :6D.2-1-6D.2-6 Mar, 2018

    Relation: 2018 IEEE International Reliability Physics Symposium (IRPS)

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  6. 6
    مؤتمر
    Energy band gap and phonon frequency in semiconductors are material constants?

    المؤلفون: Kabuyanagi, Shoichi, Toriumi, Akira

    المصدر: 2016 IEEE Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2016 IEEE. :34-35 Jun, 2016

    Relation: 2016 IEEE Silicon Nanoelectronics Workshop (SNW)

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  7. 7
    مؤتمر
    Effect of free carrier accumulation or depletion on zone-center vibrational mode in Ge

    المؤلفون: Kabuyanagi, Shoichi, Nishimura, Tomonori, Yajima, Takeaki, Toriumi, Akira

    المصدر: 2015 Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2015. :1-2 Jun, 2015

    Relation: 2015 Silicon Nanoelectronics Workshop (SNW)

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  8. 8
    مؤتمر
    Effects of free-carriers on rigid band and bond descriptions in Germanium - Key to designing and modeling in Ge nano-devices

    المؤلفون: Kabuyanagi, Shoichi, Toriumi, Akira

    المصدر: 2015 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2015 IEEE International. :34.2.1-34.2.4 Dec, 2015

    Relation: 2015 IEEE International Electron Devices Meeting (IEDM)

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  9. 9
    مؤتمر
    Dramatic effects of hydrogen-induced out-diffusion of oxygen from Ge surface on junction leakage as well as electron mobility in n-channel Ge MOSFETs

    المؤلفون: Lee, Choong Hyun, Nishimura, Tomonori, Cimang Lu, Kabuyanagi, Shoichi, Toriumi, Akira

    المصدر: 2014 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2014 IEEE International. :32.5.1-32.5.4 Dec, 2014

    Relation: 2014 IEEE International Electron Devices Meeting (IEDM)

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  10. 10
    دورية أكاديمية
    Impacts of oxygen passivation on poly-crystalline germanium thin film transistor

    المؤلفون: Kabuyanagi, Shoichi, Nishimura, Tomonori, Nagashio, Kosuke, Toriumi, Akira

    المصدر: In Thin Solid Films 30 April 2014 557:334-337

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