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1دورية أكاديمية
المؤلفون: Keita Kurohara, Shinya Imai, Takuya Hamada, Tetsuya Tatsumi, Shigetaka Tomiya, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 390-398 (2024)
مصطلحات موضوعية: Transition-metal di-chalcogenide (TMDC), tungsten disulfide (WS2), ultra-high-vacuum (UHV) radio-frequency (RF) magnetron sputtering, chlorine (Cl2) plasma treatment, sulfur-vapor annealing (SVA), Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 15-21 (2023)
مصطلحات موضوعية: 2D-FETs, CMOS inverter, doping-free, WSe₂, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
المصدر: Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2045-2322
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4دورية أكاديمية
المؤلفون: Takuya Hamada, Shigetaka Tomiya, Tetsuya Tatsumi, Masaya Hamada, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 278-285 (2021)
مصطلحات موضوعية: Activation annealing, chlorine plasma, molybdenum disulfide (MoS₂), radio-frequency magnetron sputtering, transition metal dichalcogenide (TMDC), Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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5دورية أكاديمية
المؤلفون: Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1117-1124 (2021)
مصطلحات موضوعية: Tungsten disulfide (WS₂), pMISFET, ultra-high vacuum (UHV), radio-frequency (RF) magnetron sputtering, sulfur-vapor annealing (SVA), TiN top gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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6دورية أكاديمية
المؤلفون: Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kakushima Kuniyuki, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi
المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 2-6 (2019)
مصطلحات موضوعية: Transition metal di-chalcogenide, TMDC, molybdenum disulfide (MoS₂), UHV RF sputtering, H₂S annealing, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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7دورية أكاديمية
المؤلفون: Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 1258-1263 (2019)
مصطلحات موضوعية: Transition metal dichalcogenide (TMDC), zirconium disulfide (ZrS₂), radio-frequency magnetron sputtering, sulfur vapor annealing, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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8دورية أكاديمية
المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1239-1245 (2018)
مصطلحات موضوعية: Vertically-stacked nanowire FETs, accumulation mode operation, self-heating-effect, source/drain recessed contact, p/n-stacked nanowire on bulk-FinFET, 3-dimensinal 6T-SRAM layout, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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9دورية أكاديمية
المؤلفون: Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018)
مصطلحات موضوعية: Transition metal di-chalcogenide, molybdenum disulfide, sputtering, large area integration, MISFET, top gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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10مؤتمر
المؤلفون: Kazuo Tsutsui, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng-Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Ahmet, Parhat, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai
المصدر: Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on. :58-61 May, 2008
Relation: 2008 International Workshop on Junction Technology (IWJT)