المؤلفون: Keita Kurohara, Shinya Imai, Takuya Hamada, Tetsuya Tatsumi, Shigetaka Tomiya, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 12, Pp 390-398 (2024)

مصطلحات موضوعية: Transition-metal di-chalcogenide (TMDC), tungsten disulfide (WS2), ultra-high-vacuum (UHV) radio-frequency (RF) magnetron sputtering, chlorine (Cl2) plasma treatment, sulfur-vapor annealing (SVA), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10475166/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/0f0027c3231c43f5b9517a4346560028

المؤلفون: Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 15-21 (2023)

مصطلحات موضوعية: 2D-FETs, CMOS inverter, doping-free, WSe₂, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9963927/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/78132e64be9f473e9a8658ead202977e

المؤلفون: Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)

مصطلحات موضوعية: Medicine, Science

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2045-2322

URL الوصول: https://doaj.org/article/dda183a6676b4b4b9870a3757832d4df

المؤلفون: Takuya Hamada, Shigetaka Tomiya, Tetsuya Tatsumi, Masaya Hamada, Taiga Horiguchi, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 278-285 (2021)

مصطلحات موضوعية: Activation annealing, chlorine plasma, molybdenum disulfide (MoS₂), radio-frequency magnetron sputtering, transition metal dichalcogenide (TMDC), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9319671/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/eb330459f5684d7a8f71012dc822f8c8

المؤلفون: Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 1117-1124 (2021)

مصطلحات موضوعية: Tungsten disulfide (WS₂), pMISFET, ultra-high vacuum (UHV), radio-frequency (RF) magnetron sputtering, sulfur-vapor annealing (SVA), TiN top gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9525137/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/11cee9fddb4246718e11886e469a32ab

المؤلفون: Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kakushima Kuniyuki, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 2-6 (2019)

مصطلحات موضوعية: Transition metal di-chalcogenide, TMDC, molybdenum disulfide (MoS₂), UHV RF sputtering, H₂S annealing, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8516288/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/8479b4f0da7940ff8104e132b5edfd81

المؤلفون: Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 1258-1263 (2019)

مصطلحات موضوعية: Transition metal dichalcogenide (TMDC), zirconium disulfide (ZrS₂), radio-frequency magnetron sputtering, sulfur vapor annealing, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8848462/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/19a6e270e1e647a884d4be0a8c15582f

المؤلفون: Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1239-1245 (2018)

مصطلحات موضوعية: Vertically-stacked nanowire FETs, accumulation mode operation, self-heating-effect, source/drain recessed contact, p/n-stacked nanowire on bulk-FinFET, 3-dimensinal 6T-SRAM layout, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8540840/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/ce1ee70626f74aaeaca5484246517df9

المؤلفون: Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018)

مصطلحات موضوعية: Transition metal di-chalcogenide, molybdenum disulfide, sputtering, large area integration, MISFET, top gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8543583/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/a83116f24e794cb490cc4ec8810be61b

المؤلفون: Kazuo Tsutsui, Masamitsu Watanabe, Yasumasa Nakagawa, Kazunori Sakai, Takayuki Kai, Cheng-Guo Jin, Yuichiro Sasaki, Kuniyuki Kakushima, Ahmet, Parhat, Bunji Mizuno, Takeo Hattori, Hiroshi Iwai

المصدر: Extended Abstracts - 2008 8th International Workshop on Junction Technology (IWJT '08) Junction Technology, 2008. IWJT '08. Extended Abstracts - 2008 8th International workshop on. :58-61 May, 2008

Relation: 2008 International Workshop on Junction Technology (IWJT)