نتائج البحث - "Key-Min Lee"

1

مؤتمر

Dependence of plasma process induced damage on the transistor gate area

المؤلفون: Sung-Hyung Park, Hi-Deok Lee, Key-Min Lee, Myoung-Jun Jang, Joo-Hyoung Lee, Geun-Suk Park, Ki-Seok Yoon, Jung-Hoon Choi, Young-Jin Park, Hee-Goo Youn

المصدر: 2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538) Plasma- and process-induced damage Plasma- and Process-Induced Damage, 2001 6th International Symposium on. :124-127 2001

Relation: 2001 6th International Symposium on Plasma- and Process-Induced Damage

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2

دورية أكاديمية

A study of stress-induced p/sup +//n salicided junction leakage failure and optimized process conditions for sub-0.15-/spl mu/m CMOS technology

المؤلفون: Joo-Hyoung Lee, Sung-Hyung Park, Key-Min Lee, Ki-Seok Youn, Young-Jin Park, Chel-Jong Choi, Tae-Yeon Seong, Hi-Deok Lee

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 49(11):1985-1992 Nov, 2002

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3

دورية أكاديمية

N/sup +//P junction leakage characteristics of Co salicide process for 0.15 /spl mu/m CMOS devices

المؤلفون: Key-Min Lee, Chel-Jong Choi, Joo-Hyoung Lee, Tae-Yeon Seong, Young-Jin Park, Sung-Kwon Hong, Jae-Gyung Ahn, Hi-Deok Lee

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 49(5):937-939 May, 2002

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4

دورية أكاديمية

Abnormal junction profile of silicided p/sup +//n shallow junctions: a leakage mechanism

المؤلفون: Chel-Jong Choi, Tae-Yeon Seong, Key-Min Lee, Joo-Hyoung Lee, Young-Jin Park, Hi-Deok Lee

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 23(4):188-190 Apr, 2002

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5

Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology

المؤلفون: Hee-Hwan Ji, Hi-Deok Lee, Ki-Seok Yoon, Keun-Koo Kang, Young-Jin Park, Mi-Suk Bae, Myoung-Jun Jang, Jung-Hoon Choi, Geun-Suk Park, Joo-Hyoung Lee, Key-Min Lee, Seong-Hyun Park

المصدر: Japanese Journal of Applied Physics. 41:2445-2449

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), business.industry, Schottky barrier, General Engineering, General Physics and Astronomy, Schottky diode, Reverse leakage current, chemistry.chemical_compound, CMOS, chemistry, Depletion region, Silicide, Optoelectronics, business, Penetration depth, Diode

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4db6d6518823d485c0254ba0727be5f5
https://doi.org/10.1143/jjap.41.2445

View this record from the Institute of Physics

6

Low power and improved switching properties of selector-less Ta2O5 based ReRAM using Ti-rich TiN electrode

المؤلفون: Kwon Hong, Kyoo Ho Jung, Hyeong Soo Kim, Sungki Park, Moon-Sig Joo, Woo-young Park, Beom-Yong Kim, Wangee Kim, Key-Min Lee, B. M. Seo

المصدر: Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.

مصطلحات موضوعية: Materials science, chemistry, Electrode, chemistry.chemical_element, Nanotechnology, Tin, Power (physics), Resistive random-access memory

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::41365e66c872d9a73c3c41d3ed252f5c
https://doi.org/10.7567/ssdm.2012.b-5-2

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N/sup +//P junction leakage characteristics of Co salicide process for 0.15 μm CMOS devices

المؤلفون: Key-Min Lee, Sung-Kwon Hong, Tae Yeon Seong, Hi-Deok Lee, Joo-Hyoung Lee, Chel-Jong Choi, Jae-Gyung Ahn, Young-Jin Park

المصدر: IEEE Transactions on Electron Devices. 49:937-939

مصطلحات موضوعية: Materials science, Dopant, business.industry, Analytical chemistry, Salicide, Isotropic etching, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Ion implantation, CMOS, chemistry, Transmission electron microscopy, Silicide, Optoelectronics, Electrical and Electronic Engineering, business, Diode

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::af9d623199d1027248f9c5e6104708a9
https://doi.org/10.1109/16.998607

8

Abnormal junction profile of silicided p/sup +//n shallow junctions: a leakage mechanism

المؤلفون: Joo-Hyoung Lee, Key-Min Lee, Hi-Deok Lee, Tae Yeon Seong, Chel-Jong Choi, Young-Jin Park

المصدر: IEEE Electron Device Letters. 23:188-190

مصطلحات موضوعية: Ion implantation, Materials science, Dopant, Transmission electron microscopy, Active edge, Shallow trench isolation, Analytical chemistry, Electrical and Electronic Engineering, Isotropic etching, Electronic, Optical and Magnetic Materials, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::12cbe368c56d28116f01dffb43a2c411
https://doi.org/10.1109/55.992834

9

Dependence of plasma process induced damage on the transistor gate area

المؤلفون: Jung-Hoon Choi, Geun-Suk Park, Sung-Hyung Park, Young-Jin Park, Myoung-Jun Jang, Key-Min Lee, Hee-Goo Youn, Hi-Deok Lee, Ki-Seok Yoon, Joo-Hyoung Lee

المصدر: 2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538).

مصطلحات موضوعية: Materials science, business.industry, Circuit design, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit design, law.invention, CMOS, law, Gate oxide, MOSFET, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Antenna (radio), business, Hardware_LOGICDESIGN, Electronic circuit

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4f3769318a05cbbe3b4676cab99fcb5c
https://doi.org/10.1109/ppid.2001.929994

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Characterization of the Co-Silicide Penetration Depth into the Junction Area

المؤلفون: Jung-Hoon Choi, Young-Jin Park, Keun-Koo Kang, Hi-Deok Lee, Key-Min Lee, Ki-Seok Yoon, Myoung-Jun Jang, Geun-Suk Park, Seong-Hyun Park, Joo-Hyoung Lee

المصدر: Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.

مصطلحات موضوعية: chemistry.chemical_compound, Materials science, chemistry, business.industry, Silicide, Optoelectronics, Nanotechnology, business, Penetration depth, Junction area, Characterization (materials science)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::705f564b14381ab36667cf58fc3614d4
https://doi.org/10.7567/ssdm.2001.b-5-3

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