المؤلفون: Weinbub, J., Kotlyar, R.

المصدر: IEEE Nanotechnology Magazine IEEE Nanotechnology Mag. Nanotechnology Magazine, IEEE. 17(4):3-3 Aug, 2023

المؤلفون: Kotlyar, R., Premaratne, S., Zheng, G., Corrigan, J., Pillarisetty, R., Neyens, S., Zietz, O., Watson, T., Luthi, F., Borjans, F., Lampert, L., Henry, E., George, H., Bojarski, S., Roberts, J., Matsuura, A. Y., Clarke, J. S.

المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :8.4.1-8.4.4 Dec, 2022

Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Zwerver, A. M. J., Krähenmann, T., Watson, T. F., Lampert, L., George, H. C., Pillarisetty, R., Bojarski, S. A., Amin, P., Amitonov, S. V., Boter, J. M., Caudillo, R., Corras-Serrano, D., Dehollain, J. P., Droulers, G., Henry, E. M., Kotlyar, R., Lodari, M., Luthi, F., Michalak, D. J., Mueller, B. K., Neyens, S., Roberts, J., Samkharadze, N., Zheng, G., Zietz, O. K., Scappucci, G., Veldhorst, M., Vandersypen, L. M. K., Clarke, J. S.

المصدر: Nature Electronics 5, 184-190 (2022)

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Quantum Physics

URL الوصول: http://arxiv.org/abs/2101.12650

المؤلفون: Pillarisetty, R., Watson, T.F., Mueller, B., Henry, E., George, H.C., Bojarski, S., Lampert, L., Luthi, F., Kotlyar, R., Zietz, O., Neyens, S., Borjans, F., Caudillo, R., Michalak, D., Nahm, R., Park, J., Ramsey, M., Roberts, J., Schaal, S., Zheng, G., Krahenmann, T., Lodari, M., Zwerver, A.M.J., Veldhorst, M., Scappucci, G., Vandersvpen, L.M.K., Clarke, J.S.

المصدر: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :14.1.1-14.1.4 Dec, 2021

Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Wui Then, Han, Radosavljevic, M., Desai, N., Ehlert, R., Hadagali, V., Jun, K., Koirala, P., Minutillo, N., Kotlyar, R., Oni, A., Qayyum, M., Rode, J., Sandford, J., Talukdar, T., Thomas, N., Vora, H., Wallace, P., Weiss, M., Weng, X., Fischer, P.

المصدر: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :27.3.1-27.3.4 Dec, 2020

Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Stettler, M., Cea, S., Hasan, S., Jiang, L., Kaushik, A., Keys, P., Kotlyar, R., Landon, C., Pantuso, D., Slepko, A., Smith, S., Tiwari, V., Weber, C., Weber, J. R.

المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :39.1.1-39.1.4 Dec, 2019

Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Pillarisetty, R., George, H. C., Watson, T. F., Lampert, L., Thomas, N., Bojarski, S., Amin, P., Caudillo, R., Henry, E., Kashani, N., Keys, P., Kotlyar, R., Luthi, F., Michalak, D., Millard, K., Roberts, J., Torres, J., Zietz, O., Krahenmann, T., Zwerver, A. - M., Veldhorst, M., Scappucci, G., Vandersypen, L. M. K., Clarke, J.S.

المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :31.5.1-31.5.4 Dec, 2019

Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

المؤلفون: Golonzka, O., Arslan, U., Bai, P., Bohr, M., Baykan, O., Chang, Y., Chaudhari, A., Chen, A., Clarke, J., Connor, C., Das, N., English, C., Ghani, T., Hamzaoglu, F., Hentges, P., Jain, P., Jezewski, C., Karpov, I., Kothari, H., Kotlyar, R., Lin, B., Metz, M., Odonnell, J., Ouellette, D., Park, J., Pirkle, A., Quintero, P., Seghete, D., Sekhar, M., Gupta, A.S., Seth, M., Strutt, N., Wiegand, C., Yoo, H.J., Fischer, K.

المصدر: 2019 Symposium on VLSI Technology VLSI Technology, 2019 Symposium on. :T230-T231 Jun, 2019

Relation: 2019 Symposium on VLSI Technology

المؤلفون: Zwerver, A. M. J., Krähenmann, T., Watson, T. F., Lampert, L., George, H. C., Pillarisetty, R., Bojarski, S. A., Amin, P., Amitonov, S. V., Boter, J. M., Caudillo, R., Correas-Serrano, D., Dehollain, J. P., Droulers, G., Henry, E. M., Kotlyar, R., Lodari, M., Lüthi, F., Michalak, D. J., Mueller, B. K., Neyens, S., Roberts, J., Samkharadze, N., Zheng, G., Zietz, O. K., Scappucci, G., Veldhorst, M., Vandersypen, L. M. K.^{Aff1, IDs41928022007279_cor28}, Clarke, J. S.^{Aff2, IDs41928022007279_cor29}

المصدر: Nature Electronics. 5(3):184-190

المؤلفون: Pillarisetty, R., Thomas, N., George, H.C., Singh, K., Roberts, J., Lampert, L., Amin, P., Watson, T.F., Zheng, G., Torres, J., Metz, M., Kotlyar, R., Keys, P., Boter, J.M., Dehollain, J.P., Droulers, G., Eenink, G., Li, R., Massa, L., Sabbagh, D., Samkharadze, N., Volk, C., Wuetz, B. P., Zwerver, A.-M., Veldhorst, M., Scappucci, G., Vandersypen, L.M.K., Clarke, J.S.

المصدر: 2018 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2018 IEEE International. :6.3.1-6.3.4 Dec, 2018

Relation: 2018 IEEE International Electron Devices Meeting (IEDM)