يعرض 1 - 10 نتائج من 81 نتيجة بحث عن '"Kuang-Po Hsueh"', وقت الاستعلام: 1.27s تنقيح النتائج
  1. 1
    دورية أكاديمية
    AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer

    المؤلفون: Taofei Pu, Hsiang-Chun Wang, Kuang-Po Hsueh, Hsien-Chin Chiu, Xinke Liu

    المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 318-323 (2022)

    مصطلحات موضوعية: AlGaN/GaN, Schottky barrier diode, Si doped, AlGaN barrier layer, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/9751041/; https://doaj.org/toc/2168-6734

    URL الوصول: https://doaj.org/article/b2525cb402274ceca583558c4b0a8bd4

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  2. 2
    دورية أكاديمية
    Effects of Thermal Annealing on the Properties of Zirconium-Doped MgxZn1−XO Films Obtained through Radio-Frequency Magnetron Sputtering

    المؤلفون: Wen-Yen Lin, Feng-Tsun Chien, Hsien-Chin Chiu, Jinn-Kong Sheu, Kuang-Po Hsueh

    المصدر: Membranes, Vol 11, Iss 5, p 373 (2021)

    مصطلحات موضوعية: ZrO2, MgZnO, ZnO, MgO, thin film transistor, radio-frequency magnetron sputtering, Chemical technology, TP1-1185, Chemical engineering, TP155-156

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2077-0375/11/5/373; https://doaj.org/toc/2077-0375

    URL الوصول: https://doaj.org/article/5a751a8b32b04314a3eae1a77cde0705

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  3. 3
    دورية أكاديمية
    Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

    المؤلفون: Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh

    المصدر: Crystals, Vol 10, Iss 1, p 25 (2020)

    مصطلحات موضوعية: normally-off, hemt, p-gan gate, low work function, leakage current, breakdown voltage, Crystallography, QD901-999

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2073-4352/10/1/25; https://doaj.org/toc/2073-4352

    URL الوصول: https://doaj.org/article/981afcc907a2470394259a49d461e905

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  4. 4
    مؤتمر
    GaN lattice matched ZnO/Pr2O3 film as gate dielectric oxide layer for AlGaN/GaN HEMT

    المؤلفون: Lin, Che-Kai, Ming-Yang Chen, Hsiang-Chun Wang, Chih-Wei Yang, Chao-Wei Chiu, Hsien-Chin Chiu, Kuang-Po Hsueh

    المصدر: 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of. :408-411 Dec, 2009

    Relation: 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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  5. 5
    مؤتمر
    ZnO based thin-film transistor with high-κ gadolinium and praseodymium oxide as gate dielectric

    المؤلفون: Hsiang-Chun Wang, Che-Kai Lin, Hsien-Chin Chiu, Kuang-Po Hsueh

    المصدر: 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of. :205-208 Dec, 2009

    Relation: 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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  6. 6
    Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage

    المؤلفون: Kuang-Po Hsueh, Hsien-Chin Chiu, Hsiang-Chun Wang, Bo-Hong Li, Rong Xuan, Yi-Sheng Chang, Chih-Wei Hu

    المصدر: Materials Science in Semiconductor Processing. 90:107-111

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Mechanical Engineering, Schottky barrier, Schottky diode, 02 engineering and technology, SBDS, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Anode, Mechanics of Materials, 0103 physical sciences, Breakdown voltage, Optoelectronics, General Materials Science, 0210 nano-technology, business, Ohmic contact, Layer (electronics), Diode

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a54c89f3067202882dc36a3b030e0a5a
    https://doi.org/10.1016/j.mssp.2018.10.013

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  7. 7
    Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

    المؤلفون: Kuang-Po Hsueh, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Chia-Hao Liu, Hsien-Chin Chiu

    المصدر: Crystals, Vol 10, Iss 1, p 25 (2020)
    Crystals
    Volume 10
    Issue 1

    مصطلحات موضوعية: leakage current, Materials science, General Chemical Engineering, Schottky barrier, chemistry.chemical_element, 02 engineering and technology, High-electron-mobility transistor, 01 natural sciences, law.invention, breakdown voltage, Inorganic Chemistry, law, Vacancy defect, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, lcsh:QD901-999, Breakdown voltage, General Materials Science, 010302 applied physics, Zirconium, business.industry, 020208 electrical & electronic engineering, Transistor, Condensed Matter Physics, hemt, chemistry, Melting point, low work function, Optoelectronics, normally-off, lcsh:Crystallography, business, Voltage, p-gan gate

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ddb9368545384ad3538d9e52dbb97e7
    https://www.mdpi.com/2073-4352/10/1/25

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  8. 8
    AlGaN/GaN Schottky barrier diodes on silicon substrates with various Fe doping concentrations in the buffer layers

    المؤلفون: Bo-Hong Li, Hou-Yu Wang, Kuang-Po Hsueh, Li-Yi Peng, Hsiang-Chun Wang, Jiun-Wei Chiu, Hsien-Chin Chiu, Shang-Cyun Chen

    المصدر: Microelectronics Reliability. 83:238-241

    مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, Schottky barrier, Doping, Analytical chemistry, chemistry.chemical_element, Schottky diode, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Buffer (optical fiber), Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, Breakdown voltage, Electrical and Electronic Engineering, 0210 nano-technology, Safety, Risk, Reliability and Quality, Layer (electronics), Diode

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2347a9846bc5e8c74389314745e2bca1
    https://doi.org/10.1016/j.microrel.2017.05.034

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  9. 9
    Reliability Studies on AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Through-Substrate via Technique and Backside Heat Sink Metal on Silicon-on-Insulator Substrates

    المؤلفون: Hsien-Chin Chiu, Hsiang-Chun Wang, Kuang-Po Hsueh, Feng-Tso Chien, Hsuan-Ling Kao, Hou-Yu Wang, Kuo-Jen Chang, Chih-Tien Chen

    المصدر: ECS Journal of Solid State Science and Technology. 7:Q142-Q147

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Transistor, Silicon on insulator, 02 engineering and technology, Substrate (electronics), Heat sink, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Metal, Semiconductor, Reliability (semiconductor), law, visual_art, 0103 physical sciences, visual_art.visual_art_medium, Optoelectronics, 0210 nano-technology, business, High electron

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a29e68bc0ba5a6e46748d936a5bee2dc
    https://doi.org/10.1149/2.0201808jss

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  10. 10
    Effect of AlN spacer layer thickness on AlGaN/GaN/Si Schottky barrier diodes

    المؤلفون: Hsien-Chin Chiu, Kuang-Po Hsueh, Li-Yi Peng, Hsiang-Chun Wang, Rong Xuan, Yuan-Hsiang Cheng, Hou-Yu Wang, Chih-Wei Hu

    المصدر: Materials Science in Semiconductor Processing. 66:69-73

    مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, business.industry, Mechanical Engineering, Schottky barrier, chemistry.chemical_element, Schottky diode, 02 engineering and technology, Substrate (electronics), 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, chemistry, Mechanics of Materials, 0103 physical sciences, Optoelectronics, Breakdown voltage, General Materials Science, 0210 nano-technology, business, Layer (electronics), Diode

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::71e0230991b941bc35c8f995e9a3fe2f
    https://doi.org/10.1016/j.mssp.2017.04.001

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