يعرض 1 - 10 نتائج من 123 نتيجة بحث عن '"Kuraguchi, M."', وقت الاستعلام: 1.08s تنقيح النتائج
  1. 1
    مؤتمر
    Suppression of current collapse by Access-region Carrier Enhancement technique in GaN-MOSFETs

    المؤلفون: Kajiwara, Y., Ono, H., Kato, D., Shindome, A., Huang, P. -C., Wu, P. -T., Kuraguchi, M.

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :317-320 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  2. 2
    مؤتمر
    Highly Reliable GaN-MOSFETs with High Channel Mobility Gate by Selective-Area Crystallization

    المؤلفون: Kajiwara, Y., Shindome, A., Mukai, A., Ono, H., Kato, D., Kuraguchi, M., Nunoue, S.

    المصدر: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2020 32nd International Symposium on. :302-305 Sep, 2020

    Relation: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  3. 3
    مؤتمر
    Improvement of channel mobility and reliability in GaN-MOSFETs

    المؤلفون: Kuraguchi, M., Kajiwara, Y., Kato, D., Hikosaka, T., Ono, H., Shindome, A., Mukai, A., Nunoue, S.

    المصدر: 2019 Compound Semiconductor Week (CSW) Compound Semiconductor Week (CSW), 2019. :1-2 May, 2019

    Relation: 2019 Compound Semiconductor Week (CSW)

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  4. 4
    مؤتمر
    Improvement of positive bias temperature instability characteristic in GaN MOSFETs by control of impurity density in SiO2 gate dielectric

    المؤلفون: Yonehara, T., Kajiwara, Y., Kato, D., Uesugi, K., Shimizu, T., Nishida, Y., Ono, H., Shindome, A., Mukai, A., Yoshioka, A., Kuraguchi, M.

    المصدر: 2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :33.3.1-33.3.4 Dec, 2017

    Relation: 2017 IEEE International Electron Devices Meeting (IEDM)

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  5. 5
    مؤتمر
    380v/1.9A GaN power-HEMT: current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier

    المؤلفون: Saito, W., Kuraguchi, M., Takada, Y., Tsuda, K., Domon, T., Omura, I., Yamaguchi, M.

    المصدر: IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. International Electron Devices Meeting 2005 Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. :586-589 2005

    Relation: International Electron Devices Meeting 2005

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  6. 6
    مؤتمر
    A 1.9 GHz SPDT switch implemented with GaN HFETs featuring two different depth-recesses in i-AlGaN

    المؤلفون: Hirose, M., Takada, Y., Kuraguchi, M., Sasaki, T., Tsuda, K.

    المصدر: IEEE Compound Semiconductor Integrated Circuit Symposium, 2004. Compound semiconductor integrated circuit symposium Compound Semiconductor Integrated Circuit Symposium, 2004. IEEE. :163-166 2004

    Relation: IEEE Compound Semiconductor Integrated Circuit Symposium. 2004 IEEE CISC Symposium

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  7. 7
    دورية أكاديمية
    Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs

    المؤلفون: Saito, W., Noda, T., Kuraguchi, M., Takada, Y., Tsuda, K., Saito, Y., Omura, I., Yamaguchi, M.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 56(7):1371-1376 Jul, 2009

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  8. 8
    دورية أكاديمية
    Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

    المؤلفون: Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 53(2):356-362 Feb, 2006

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  9. 9
    دورية أكاديمية
    Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage

    المؤلفون: Saito, W., Kuraguchi, M., Takada, Y., Tsuda, K., Omura, I., Ogura, T.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 52(2):159-164 Feb, 2005

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  10. 10
    دورية أكاديمية
    Design optimization of high breakdown voltage AlGaN-GaN power HEMT on an insulating substrate for R/sub ON/A-V/sub B/ tradeoff characteristics

    المؤلفون: Saito, W., Kuraguchi, M., Takada, Y., Tsuda, K., Omura, I., Ogura, T.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 52(1):106-111 Jan, 2005

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