يعرض 1 - 10 نتائج من 1,750 نتيجة بحث عن '"Kuramata, A."', وقت الاستعلام: 1.28s تنقيح النتائج
  1. 1
    مؤتمر
    Fabrication of Ampere-Class $p$-Cu2O/$n-\beta$-Ga2O3 Trench Heterojunction Barrier Schottky Diodes and Double-Pulse Evaluation

    المؤلفون: Takatsuka, Akio, Miyamoto, Hironobu, Sasaki, Kohei, Kuramata, Akito

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :342-345 May, 2023

    Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  2. 2
    مؤتمر
    Constrained Generalized Additive 2 Model With Consideration of High-Order Interactions

    المؤلفون: Watanabe, Akihisa, Kuramata, Michiya, Majima, Kaito, Kiyohara, Haruka, Kensho, Kondo, Nakata, Kazuhide

    المصدر: 2021 International Conference on Electrical, Computer and Energy Technologies (ICECET) Electrical, Computer and Energy Technologies (ICECET), 2021 International Conference on. :1-6 Dec, 2021

    Relation: 2021 International Conference on Electrical, Computer and Energy Technologies (ICECET)

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  3. 3
    دورية أكاديمية
    Packaged $\beta$-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties

    المؤلفون: Wilhelmi, F., Kunori, S., Sasaki, K., Kuramata, A., Komatsu, Y., Lindemann, A.

    المصدر: IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 37(4):3737-3742 Apr, 2022

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  4. 4
    مؤتمر
    Larger Sparse Quadratic Assignment Problem Optimization Using Quantum Annealing and a Bit-Flip Heuristic Algorithm

    المؤلفون: Kuramata, Michiya, Katsuki, Ryota, Nakata, Kazuhide

    المصدر: 2021 IEEE 8th International Conference on Industrial Engineering and Applications (ICIEA) Industrial Engineering and Applications (ICIEA), 2021 IEEE 8th International Conference on. :556-565 Apr, 2021

    Relation: 2021 IEEE 8th International Conference on Industrial Engineering and Applications (ICIEA)

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  5. 5
    مؤتمر
    AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices

    المؤلفون: Lundh, James Spencer, Masten, Hannah N., Sasaki, Kohei, Jacobs, Alan G., Cheng, Zhe, Spencer, Joseph, Chen, Lei, Gallagher, James, Koehler, Andrew D., Konishi, Keita, Graham, Samuel, Kuramata, Akito, Hobart, Karl D., Tadjer, Marko J.

    المصدر: 2022 Device Research Conference (DRC) Device Research Conference (DRC), 2022. :1-2 Jun, 2022

    Relation: 2022 Device Research Conference (DRC)

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  6. 6
    تقرير
    Solving Large Break Minimization Problems in a Mirrored Double Round-robin Tournament Using Quantum Annealing

    المؤلفون: Kuramata, Michiya, Katsuki, Ryota, Nakata, Kazuhide

    مصطلحات موضوعية: Quantum Physics, Computer Science - Artificial Intelligence, Computer Science - Discrete Mathematics

    URL الوصول: http://arxiv.org/abs/2110.07239

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  7. 7
    مؤتمر
    Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage

    المؤلفون: Xia, Xinyi, Xian, Minghan, Carey, Patrick, Fares, Chaker, Ren, Fan, Tadjer, Marko, Pearton, Steve J., Quang Tu, Thieu, Goto, Ken, Kuramata, Akito

    المصدر: 2021 Device Research Conference (DRC) Device Research Conference (DRC), 2021. :1-2 Jun, 2021

    Relation: 2021 Device Research Conference (DRC)

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  8. 8
    تقرير
    Larger Sparse Quadratic Assignment Problem Optimization Using Quantum Annealing and a Bit-Flip Heuristic Algorithm

    المؤلفون: Kuramata, Michiya, Katsuki, Ryota, Nakata, Kazuhide

    المصدر: 2021 IEEE 8th International Conference on Industrial Engineering and Applications (ICIEA), 2021, pp. 556-565

    مصطلحات موضوعية: Quantum Physics, Mathematics - Optimization and Control

    URL الوصول: http://arxiv.org/abs/2012.10135

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  9. 9
    دورية أكاديمية
    Anisotropic mechanical properties of β-Ga2O3 single-crystal measured via angle-dependent nanoindentation using a Berkovich indenter.

    المؤلفون: Yao, Yongzhao, Sugawara, Yoshihiro, Sasaki, Kohei, Kuramata, Akito, Ishikawa, Yukari

    المصدر: Journal of Applied Physics; 12/7/2023, Vol. 134 Issue 21, p1-17, 17p

    مصطلحات موضوعية: NANOINDENTATION, MECHANICAL behavior of materials, SCANNING transmission electron microscopy, MATERIAL plasticity, NANOINDENTATION tests, COMPOUND semiconductors

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  10. 10
    دورية أكاديمية
    Raman Thermography of Peak Channel Temperature in $\beta$ -Ga2O3 MOSFETs

    المؤلفون: Pomeroy, J.W., Middleton, C., Singh, M., Dalcanale, S., Uren, M.J., Wong, M.H., Sasaki, K., Kuramata, A., Yamakoshi, S., Higashiwaki, M., Kuball, M.

    المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 40(2):189-192 Feb, 2019

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