يعرض 1 - 10 نتائج من 10 نتيجة بحث عن '"Kwakman, Laurens"', وقت الاستعلام: 0.83s تنقيح النتائج
  1. 1
    مؤتمر
    CD metrology for EUV lithography and etch

    المؤلفون: Johanesen, Hayley, Kenslea, Anne, Williamson, Mark, Knowles, Matt, Kwakman, Laurens, Van Puymbroeck, Jan, Felder, Dan, Levi, Shimon, Nishry, Noam, Adan, Ofer, Englard, Ilan, Gov, Shahar, Cohen, Oded, Turovets, Igor

    المصدر: 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI. :329-335 May, 2015

    Relation: 2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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  2. 2
    مؤتمر
    Reliability testing and Failure Analysis of 3D integrated systems

    المؤلفون: Klumpp, Armin, Ramm, Peter, Franz, German, Rue, Chad, Kwakman, Laurens

    المصدر: 2011 IEEE International Interconnect Technology Conference Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International. :1-3 May, 2011

    Relation: Joint 2011 IEEE International Interconnect Technology Conference (IITC) & 2011 Materials for Advanced Metallization (MAM)

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  3. 3
    Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation

    المؤلفون: Huang, J., Löffler, Markus, Mühle, Uwe, Möller, Wolfhard, Mulders, Johannes J.L., Kwakman, Laurens, Dorp, Willem F. van, Zschech, Ehrenfried

    المساهمون: Publica

    المصدر: Ultramicroscopy 184(2018), 52-56

    مصطلحات موضوعية: Computational chemistry, Silicon, Beam plasma interactions, Focused ion beams, Ion beams, IonsMilling (machining), Defect density, High resolution transmission electron microscopy, Point defects, Molecular dynamics, Surface defects, Amorphization, Transmission electron microscopy

    وصف الملف: application/pdf

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e7a5c0a2990e312db71d55b867724722
    https://www.hzdr.de/publications/Publ-26661-1

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  4. 4
    مؤتمر
    Evaluation of the accuracy and precision of STEM and EDS metrology on horizontal GAA nanowire devices.

    المؤلفون: Johanesen, Hayley, Strauss, Michael, Kenslea, Anne, Hakala, Chris, Kwakman, Laurens, Boullart, Werner, Mertens, Hans, Yong Kong Siew, Barla, Kathy

    المصدر: Proceedings of SPIE; 1/22/2019, Vol. 10959, p1-9, 9p

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  5. 5
    مؤتمر
    Statistical Significance of STEM based Metrology on Advanced 3D Transistor Structures.

    المؤلفون: Kwakman, Laurens, Kenslea, Anne, Johanesen, Hayley, Cramer, Jillian, Strauss, Michael, Boullart, Werner, Mertens, Hans, Yong Kong Siew, Barla, Kathy

    المصدر: Proceedings of SPIE; 1/22/2019, Vol. 10959, p1-14, 14p

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  6. 6
    دورية أكاديمية
    Local strain measurements in shallow trench insulator structures using near-ultraviolet Raman spectroscopy: Simulation and experiment.

    المؤلفون: Latu-Romain, Eddy, Mermoux, Michel, Crisci, Alexandre, Delille, Dominique, Kwakman, Laurens F. Tz.

    المصدر: Journal of Applied Physics; Nov2007, Vol. 102 Issue 10, p103506, 8p, 2 Diagrams, 6 Graphs

    مصطلحات موضوعية: RAMAN spectroscopy, CHEMICAL vapor deposition, OPTICAL polarization, INTEGRATED circuit design, METAL-insulator transitions, STRAINS & stresses (Mechanics)

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  7. 7
    دورية
    Evaluation of the accuracy and precision of STEM and EDS metrology on horizontal GAA nanowire devices

    المؤلفون: Ukraintsev, Vladimir A., Adan, Ofer, Johanesen, Hayley, Strauss, Michael, Kenslea, Anne, Hakala, Chris, Kwakman, Laurens, Boullart, Werner, Mertens, Hans, Siew, Yong Kong, Barla, Kathy

    المصدر: Proceedings of SPIE; May 2019, Vol. 10959 Issue: 1 p109591C-109591C-9, 986329p

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  8. 8
    دورية
    Statistical significance of STEM based metrology on advanced 3D transistor structures

    المؤلفون: Ukraintsev, Vladimir A., Adan, Ofer, Kwakman, Laurens, Kenslea, Anne, Johanesen, Hayley, Cramer, Jillian, Strauss, Michael, Boullart, Werner, Mertens, Hans, Siew, Yong Kong, Barla, Kathy

    المصدر: Proceedings of SPIE; May 2019, Vol. 10959 Issue: 1 p109590C-109590C-14, 10849425p

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  9. 9
    مؤتمر
    Characterization and Failure Analysis of 3D Integrated Systems using a novel plasma-FIB system.

    المؤلفون: Kwakman, Laurens, Franz, German, Taklo, Maaike Margrete Visser, Klumpp, Armin, Ramm, Peter

    المصدر: AIP Conference Proceedings; 11/15/2011, Vol. 1395 Issue 1, p269-273, 5p

    مصطلحات موضوعية: FAILURE analysis, FOCUSED ion beams, PLASMA gases, INTEGRATED circuits, RELIABILITY in engineering, CHEMICAL vapor deposition, CHEMICAL kinetics

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  10. 10
    دورية
    State-of-the-Art Characterization for 65 nm CMOS Processes and Beyond

    المؤلفون: Hopstaken, Marco, Juhel, Marc, Gonchond, Pierre, Kwakman, Laurens, Wyon, Christophe

    المصدر: ECS Transactions; October 2006, Vol. 3 Issue: 2 p319-331, 13p

    View this record from the Institute of Physics
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