يعرض 1 - 10 نتائج من 110 نتيجة بحث عن '"Kwang Pyuk Suh"', وقت الاستعلام: 0.92s تنقيح النتائج
  1. 1
    مؤتمر
    Negative bias temperature instability in triple gate transistors

    المؤلفون: Shigenobu Maeda, Jung-A Choi, Jeong-Hwan Yang, You-Seung Jin, Su-Kon Bae, Young-Wug Kim, Kwang-Pyuk Suh

    المصدر: 2004 IEEE International Reliability Physics Symposium. Proceedings Reliability physics Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International. :8-12 2004

    Relation: 2004 IEEE International Reliability Physics Symposium. Proceedings

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  2. 2
    مؤتمر
    HCI and BTI characteristics of ALD HfSiO(N) gate dielectrics as the compositions and the post treatment conditions

    المؤلفون: Jong Pyo Kim, Yun-Seok Kim, Ha Jin Lim, Jung Hyoung Lee, Seok Joo Doh, Hyung-Suk Jung, Sung-Kee Han, Min-Joo Kim, Jong-Ho Lee, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh, Young-Su Chung

    المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :125-128 2004

    Relation: 2004 International Electron Devices Meeting

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  3. 3
    مؤتمر
    Large scale integration and reliability consideration of triple gate transistors

    المؤلفون: Choi, J.A., Kwon Lee, You Seung Jin, Yong Jun Lee, Soo Yong Lee, Geon Ung Lee, Seung Hwan Lee, Min Chul Sun, Dong Chan Kim, Young Mi Lee, Su Gon Bae, Jeong Hwan Yang, Maeda, S., Nae In Lee, Ho Kyu Kang, Kwang Pyuk Suh

    المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :647-650 2004

    Relation: 2004 International Electron Devices Meeting

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  4. 4
    مؤتمر
    Highly controllable cyclic selective epitaxial growth (CySEG) for 65nm CMOS technology and beyond

    المؤلفون: Seung Hwan Lee, Dong Suk Shin, Hwa Sung Rhee, Tetsuji Ueno, Ho Lee Moon Han Park, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh

    المصدر: IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :1051-1054 2004

    Relation: 2004 International Electron Devices Meeting

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  5. 5
    مؤتمر
    Mass production worthy HfO/sub 2/-Al/sub 2/O/sub 3/ laminate capacitor technology using Hf liquid precursor for sub-100 nm DRAMs

    المؤلفون: Jung-Hyoung Lee, Jong Pyo Kim, Jong-Ho Lee, Yun-Seok Kim, Hyung-Seok Jung, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh, Mun-Mo Jeong, Kyu-Taek Hyun, Hion-Suck Baik, Young Su Chung, Xinye Liu, Ramanathan, S., Seidel, T., Winkler, J., Londergan, A., Hae young Kim, Jung Min Ha, Nam Kyu Lee

    المصدر: Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :221-224 2002

    Relation: IEEE International Electron Devices Meeting

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  6. 6
    مؤتمر
    Mass-productive ultra-low temperature ALD SiO/sub 2/ process promising for sub-90 nm memory and logic devices

    المؤلفون: Jae-Eun Park, Ja-Hum Ku, Joo-Won Lee, Jong-ho Yang, Kang-Soo Chu, Seung-Hwan Lee, Moon-Han Park, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh, Byoung-Ha Cho, Byoung-Chul Kim, Cheol-Ho Shin

    المصدر: Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :229-232 2002

    Relation: IEEE International Electron Devices Meeting

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  7. 7
    مؤتمر
    Cost-effective "BARC/resist-via-fill free" integration technology for 0.13 /spl mu/m Cu/low-k

    المؤلفون: Soo-Geun Lee, Kyoung-Woo Lee, Il-Goo Kim, Wan-Jae Park, Young-Jin Wee, Won-Sang Song, Jae-Hak Kim, Seung-Jin Lee, Hyeok-Sang Oh, Yong-Tak Lee, Joo-Hyuk Chung, Ho-kyu Kang, Kwang-Pyuk Suh

    المصدر: Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :591-594 2002

    Relation: IEEE International Electron Devices Meeting

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  8. 8
    مؤتمر
    Improved current performance of CMOSFETs with nitrogen incorporated HfO2-Al2O3 laminate gate dielectric

    المؤلفون: Hyung-Seok Jung, Yun-Seok Kim, Jong Pyo Kim, Jung Hyoung Lee, Jong-Ho Lee, Nae-In Lee, Ho-Kyu Kang, Kwang-Pyuk Suh, Hyuk Ju Ryu, Chang-Bong Oh, Young-Wug Kim, Kyung-Hwan Cho, Hion-Suck Baik, Young Su Chung, Hyo Sik Chang, Dae Won Moon

    المصدر: Digest. International Electron Devices Meeting, Electron devices meeting Electron Devices Meeting, 2002. IEDM '02. International. :853-856 2002

    Relation: IEEE International Electron Devices Meeting

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  9. 9
    مؤتمر
    A high performance 0.13 /spl mu/m CMOS process for GHz microprocessor manufacture

    المؤلفون: Seung Woo Lee, Sang Jung Jeon, Jong Chun Park, Jong Hyon Ahn, Young Wug Kim, Kwang Pyuk Suh

    المصدر: ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) VLSI and CAD VLSI and CAD, 1999. ICVC '99. 6th International Conference on. :136-139 1999

    Relation: ICVC'99. 6th International Conference on VLSI and CAD

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  10. 10
    مؤتمر
    Device characteristics and reliability for 0.18 /spl mu/m MOSFET with 20 /spl Aring/ gate oxide formed by RTO

    المؤلفون: Jeong-Hwan Yang, Dae-Rim Kang, Seong-Ho Kwak, Su-Cheol Lee, Young-Wug Kim, Kwang Pyuk Suh

    المصدر: ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361) VLSI and CAD VLSI and CAD, 1999. ICVC '99. 6th International Conference on. :253-256 1999

    Relation: ICVC'99. 6th International Conference on VLSI and CAD

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