المؤلفون: R. Fontanini, J. Barbot, M. Segatto, S. Lancaster, Q. Duong, F. Driussi, L. Grenouillet, L. Triozon, J. Coignus, T. Mikolajick, S. Slesazeck, D. Esseni

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 593-599 (2022)

مصطلحات موضوعية: Ferroelectric tunnel junction, FTJ, HZO, synaptic memristor, charge trapping, interfacial charge, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9765524/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/d0063b8661b54a7982b5e5c5efb362a3

المؤلفون: R. Alcala, M. Materano, P. D. Lomenzo, L. Grenouillet, T. Francois, J. Coignus, N. Vaxelaire, C. Carabasse, S. Chevalliez, F. Andrieu, T. Mikolajick, U. Schroeder

المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 907-912 (2022)

مصطلحات موضوعية: BEOL, ferroelectric, HfO₂, reliability, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9854909/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/b30337593a644526807ec901895369a8

المؤلفون: T. Francois, J. Coignus, A. Makosiej, B. Giraud, C. Carabasse, J. Barbot, S. Martin, N. Castellani, T. Magis, H. Grampeix, S. Van Duijn, C. Mounet, P. Chiquet, U. Schroeder, S. Slesazeck, T. Mikolajick, E. Nowak, M. Bocquet, N. Barrett, F. Andrieu, L. Grenouillet

المصدر: IEEE Transactions on Electron Devices. 69:2108-2114

مصطلحات موضوعية: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3ddb7a9963ca4b47a8c518521edbaeab
https://doi.org/10.1109/ted.2021.3138360

المؤلفون: L. Grenouillet, J. Barbot, J. Laguerre, S. Martin, C. Carabasse, M. Louro, M. Bedjaoui, S. Minoret, S. Kerdilès, C. Boixaderas, T. Magis, C. Jahan, F. Andrieu, J. Coignus

المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9e8e0a386fa50f81c95c4bc7797351fd
https://doi.org/10.1109/irps48203.2023.10118099

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المؤلفون: R. Alcala, P.D. Lomenzo, T. Mittmann, B. Xu, R. Guido, S. Lancaster, P. Vishnumurthy, L. Grenouillet, S. Martin, J. Coignus, T. Mikolajick, U. Schroeder

المصدر: 2022 International Electron Devices Meeting (IEDM).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::47fce1bb648504e36a684cb4944aed01
https://doi.org/10.1109/iedm45625.2022.10019554

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المؤلفون: T. Vogel, A. Zintler, N. Kaiser, N. Guillaume, G. Lefèvre, M. Lederer, A. L. Serra, E. Piros, T. Kim, P. Schreyer, R. Winkler, D. Nasiou, R. R. Olivo, T. Ali, D. Lehninger, A. Arzumanov, C. Charpin-Nicolle, G. Bourgeois, L. Grenouillet, MC. Cyrille, G. Navarro, K. Seidel, T. Kämpfe, S. Petzold, C. Trautmann, L. Molina-Luna, L. Alff

المصدر: Open Repository TuDatalib 2022

URL الوصول: https://explore.openaire.eu/search/publication?articleId=r3c4b2081b22::22a3fb08866de6a4c517f2dabb350089

المؤلفون: N. Castellani, G. Molas, Marc Bocquet, L. Grenouillet, J-M. Portal, L. Reganaz, Etienne Nowak, T. Magis, C. Carabasse, G. Navarro, D. Deleruyelle, Mathieu Bernard, J. Minguet Lopez

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2021 IEEE International Memory Workshop (IMW)
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW)
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩

مصطلحات موضوعية: OTS, Materials science, business.industry, High density, Threshold voltage, chalcogenide, Stack (abstract data type), Scalability, Optoelectronics, resistive RAM, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Crossbar switch, crossbar, business, Low voltage, Scaling, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94a04afe0bb92138e1c6f390ca2ddb15
https://doi.org/10.1109/imw51353.2021.9439606