يعرض 1 - 10 نتائج من 5,182 نتيجة بحث عن '"LDMOS"', وقت الاستعلام: 0.97s تنقيح النتائج
  1. 1
    مؤتمر
    A 22FDX® Wi-Fi PA Demonstrating a New LDMOS Device with 10V Breakdown Achieving Output Power of 29.5dBm at 40% PAE

    المؤلفون: Balasubramaniyan, Arul, Hui, Xuemei, Bellaouar, Abdellatif, Campos, Miguel Meza, Bharadwaj, Apurv, Veeramani, Elan, Syed, Shafi

    المصدر: 2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Radio Frequency Integrated Circuits Symposium (RFIC), 2024 IEEE. :35-38 Jun, 2024

    Relation: 2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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  2. 2
    مؤتمر
    Experiments of A Novel 3-D Charge Balanced Self-Shielding Isolation Technology for High-Voltage Integrated Circuits

    المؤلفون: Liu, Teng, Zhang, Wentong, Wu, Qiyi, Gu, Lihui, He, Nailong, Zhang, Sen, Liu, Yuting, Li, Hongbo, Wu, Lingying, YaoCai, Shi, Chong, Shixiong, Li, Yizhen, Yao, Yuheng, Shi, Yongyu, Qiao, Ming, Li, Zhaoji, Zhang, Bo

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :426-429 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  3. 3
    مؤتمر
    LDMOS of 34mΩ-cm2 On-Resistance with 700V Breakdown Voltage

    المؤلفون: Wei, Tao

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :398-401 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  4. 4
    مؤتمر
    Field Plate Engineering for Free Metal Routing over Lateral HV Devices

    المؤلفون: Helke, Alexander

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :450-453 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  5. 5
    مؤتمر
    Prompt Shift of On-State Resistance in LDMOS Devices: Causes, Recovery, and Reliability Implications

    المؤلفون: Prigann, Sven, Feil, Maximilian W., Reisinger, Hans, Bissinger, Jochen, Strasser, Marc, Waltl, Michael, Schlipf, Johannes, Kaya, Turgay, Bartholomaus, Lars, Gustin, Wolfgang, Basler, Thomas

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :394-397 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  6. 6
    مؤتمر
    Novel Grid-Gate 16V-nLDMOS with a Low Specific On-Resistance of 4.7mΩ.mm2Based on A Standard 0.18μm BCD Platform

    المؤلفون: Wang, Jiawei, Qiao, Ming, Ma, Dingxiang, Gao, Yue, Zhang, Bo

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :438-441 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  7. 7
    مؤتمر
    Layout Concern on Power Devices Based on 0.18μm 200V SOI-BCD Technology for Stable Electrical Characteristics and Reliability

    المؤلفون: Ye, Ran, Bian, Jiaojing, Ma, Shulang, Liu, Siyang, Lu, Li, Xu, Penglong, Xu, Chaoqi, Lin, Feng, Wei, Jiaxing, Ma, Jie, Li, Sheng, Zhang, Long, Sun, Weifeng

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :446-449 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  8. 8
    مؤتمر
    Highly Optimized High-Voltage SOI p-LDMOS Beating the Conventional SOI Limit

    المؤلفون: Mehrotra, Saumitra, Zhu, Ronghua, Cheek, Betsy, Subramanian, Vignesh, Roggenbauer, Todd

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :367-370 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  9. 9
    مؤتمر
    Influence of Structure Parameters on the RoN, sp of Quasi- Vertical Power DMOS Compatible with 0.18μm BCD Process

    المؤلفون: Wu, Tuanzhuang, Wei, Jiaxing, Wang, Weidong, Lin, Xiaonan, Ma, Jie, Li, Sheng, Ye, Ran, Zhang, Long, Ding, Desheng, Liu, Siyang, Sun, Weifeng, Xu, Chaoqi, Zhang, Yi, Lin, Feng

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :418-421 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  10. 10
    دورية أكاديمية
    200 V All-SiC Floating Gate Driver Process Platform on 4H-SiC P-epi/N+ Substate for High-Temperature Applications

    المؤلفون: Ma, J., Zhang, L., Gu, Y., Hou, X., Hong, J., Wen, H., Liu, S., Liu, A., Huang, R., Bai, S., Sun, W.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(8):5138-5141 Aug, 2024

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