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المؤلفون: Omer H. Dokumaci, Lahir Shaik Adam, Suri Hegde, Mark E. Law
المصدر: Journal of Applied Physics. 91:1894-1900
مصطلحات موضوعية: Silicon, Inorganic chemistry, Oxide, General Physics and Astronomy, chemistry.chemical_element, Equivalent oxide thickness, Nitrogen, chemistry.chemical_compound, Ion implantation, chemistry, Chemical engineering, Gate oxide, Diffusion (business), Silicon oxide
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2
المؤلفون: Bruce B. Doris, Kangguo Cheng, D. Horak, Chih-Chao Yang, S. Fan, Lahir Shaik Adam, Soon-Cheon Seo, Frederic Monsieur, Jeffrey B. Johnson, Miaomiao Wang, James H. Stathis
المصدر: IEEE Electron Device Letters. 31:1452-1454
مصطلحات موضوعية: Materials science, business.industry, Gate dielectric, Electrical engineering, Ring oscillator, Electrical contacts, Electronic, Optical and Magnetic Materials, Reliability (semiconductor), Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business, Metal gate, High-κ dielectric, Hot-carrier injection
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3
المؤلفون: Suri Hegde, Mark E. Law, C. S. Murthy, Omer H. Dokumaci, Lahir Shaik Adam, Kevin S. Jones
المصدر: Journal of Applied Physics. 87:2282-2284
مصطلحات موضوعية: Materials science, Silicon, business.industry, Oxide, General Physics and Astronomy, chemistry.chemical_element, equipment and supplies, Nitrogen, chemistry.chemical_compound, Ion implantation, Semiconductor, chemistry, Gate oxide, Frenkel defect, Optoelectronics, Wafer, business
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المؤلفون: Sanjay Mehta, R. H. Kim, V. Basker, Sean D. Burns, Kangguo Cheng, Yu Zhu, A. Ebert, Scott Halle, Chen Jia, Karen Petrillo, Soon-Cheon Seo, D. Horak, Vamsi Paruchuri, R. Johnson, T. Levin, Hemanth Jagannathan, J. Faltermeier, Jason E. Cummings, T. Sparks, M. Raymond, Wilfried Haensch, Lahir Shaik Adam, Su Chen Fan, Amit Kumar, N. Berliner, Bala S. Haran, Terry A. Spooner, S. Kanakasabapathy, Stefan Schmitz, J. Kuss, Josephine B. Chang, Thomas S. Kanarsky, Lisa F. Edge, Chiew-seng Koay, Charles W. Koburger, John C. Arnold, S. Holmes, Bruce B. Doris, Erin Mclellan, D. LaTulipe, Martin Burkhardt, D. McHerron, S. Paparao, Donald F. Canaperi, M. Smalley, James J. Demarest, Matt Colburn
المصدر: 2008 IEEE International Electron Devices Meeting.
مصطلحات موضوعية: Materials science, business.industry, Annealing (metallurgy), Transistor, Copper interconnect, Electrical engineering, law.invention, chemistry.chemical_compound, chemistry, law, Logic gate, Silicide, Optoelectronics, Node (circuits), business, Metal gate, Immersion lithography
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3f2618a1a98015406797d8aa44d360c1
https://doi.org/10.1109/iedm.2008.4796769 -
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المؤلفون: Mark E. Law, S. Hegde, Lahir Shaik Adam, Omer H. Dokumaci
المصدر: International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
مصطلحات موضوعية: Materials science, Silicon, Radiochemistry, Oxide, chemistry.chemical_element, Nitrogen, chemistry.chemical_compound, Ion implantation, chemistry, Chemical physics, Gate oxide, Scientific method, Diffusion (business), Positron annihilation
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::aefe5dd5aaba16d41957b4d815a01acd
https://doi.org/10.1109/iedm.2001.979646 -
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المؤلفون: S. Hegde, Mark E. Law, Lahir Shaik Adam, Omer H. Dokumaci
المصدر: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
مصطلحات موضوعية: Materials science, Silicon, Inorganic chemistry, Oxide, chemistry.chemical_element, Oxygen, Nitrogen, chemistry.chemical_compound, Ion implantation, chemistry, Chemical engineering, Ab initio quantum chemistry methods, Gate oxide, Diffusion (business)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d2a21fa88369925220ddb96f4d89361e
https://doi.org/10.1109/iedm.2000.904366 -
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المؤلفون: Lance S. Robertson, Kevin S. Jones, Mark E. Law, Kevin A. Gable, Omer H. Dokumaci, Suri Hegde, Lahir Shaik Adam
المصدر: MRS Proceedings. 669
مصطلحات موضوعية: Materials science, chemistry, Silicon, Annealing (metallurgy), Gate oxide, Diffusion, Analytical chemistry, chemistry.chemical_element, Implant, Nitrogen, Layer (electronics), Amorphous solid
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المؤلفون: Paul Ronsheim, Richard D. Kaplan, Jinghong Li, Mark E. Law, Robert Fleming, Omer H. Dokumaci, Jay S. Burnham, Mukesh Khare, Lahir Shaik Adam, Anthony G. Domenicucci
المصدر: MRS Proceedings. 669
مصطلحات موضوعية: Amorphous silicon, chemistry.chemical_compound, Materials science, Silicon, chemistry, Diffusion, Oxidizing agent, Thermal, Analytical chemistry, Oxide, chemistry.chemical_element, Nitrogen, Amorphous solid
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9
المؤلفون: Omer H. Dokumaci, Suri Hegde, Lahir Shaik-Adam, Dureseti Chidambarrao, Paul Ronsheim, Mark E. Law
المصدر: MRS Proceedings. 610
مصطلحات موضوعية: Supersaturation, Materials science, chemistry, Diffusion, Analytical chemistry, chemistry.chemical_element, Thermal diffusivity, Boron, Nitrogen, Layer (electronics), Carbon, Sheet resistance
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المؤلفون: C. S. Murthy, Ralph W. Young, Chester T. Dziobkowski, Kevin S. Jones, Steve Mollis, Lahir Shaik Adam, Heemyong Park, Dureseti Chidambarrao, Omer H. Dokumaci, Yaser M. Haddara, Raghavan Srinivasan, Mark E. Law, Tony Domenicucci, Wong Phillip Chuck-Yueh, Suri Hegde
المصدر: MRS Proceedings. 568
مصطلحات موضوعية: Range (particle radiation), Materials science, Silicon, chemistry, Anomalous diffusion, Gate oxide, Analytical chemistry, chemistry.chemical_element, Wafer, Diffusion (business), Nitrogen