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1دورية أكاديمية
المؤلفون: Md. Nur Kutubul Alam, Ben Kaczer, Lars-Ake Ragnarsson, Mihaela Popovici, Gerhard Rzepa, Naoto Horiguchi, Marc Heyns, Jan Van Houdt
المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 855-862 (2019)
مصطلحات موضوعية: Steep-slope FET, ferroelectric FET, trap characterization, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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2
المؤلفون: Emily E. Gallagher, Philippe Bezard, Lizzie Boakes, Andrea Firrincieli, Cedric Rolin, Lars-Ake Ragnarsson
المصدر: Advanced Etch Technology and Process Integration for Nanopatterning XII.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9637cae57bc35c26bb56f912ae5e801a
https://doi.org/10.1117/12.2662857 -
3
المؤلفون: Zhicheng Wu, Jacopo Franco, Anne Vandooren, Hiroaki Arimura, Lars-Ake Ragnarsson, Philippe Roussel, Ben Kaczer, Dimitri Linten, Nadine Collaert, Guido Groeseneken
المصدر: IEEE Transactions on Electron Devices. 69:915-921
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4
المؤلفون: Zheng Tao, Yisuo Li, Waikin Li, Minsoo Kim, Basoene Briggs, Katia Devriendt, Lieve Teugels, Farid Sebaai, Christophe Lorant, Clement Porret, Erik Rosseel, Alfonso Sepúlveda Márquez, Nicolas Jourdan, Juergen Boemmels, Jerome Mitard, Philippe Matagne, Efrain Altamirano-Sánchez, Lars-Ake Ragnarsson, Anish Dangol, Dmitry Batuk, Gerardo Tadeo Martinez Alanis, Jef Geypen, Kenichi Kanazawa, Testuo Izawa, Masakazu Kakumu, Koji Sakui, Nozomu Harada
المصدر: Advanced Etch Technology and Process Integration for Nanopatterning XI.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b27940f86043989bbeb292960c97101a
https://doi.org/10.1117/12.2614772 -
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المؤلفون: Yosuke Kimura, Kurt Wostyn, Naoto Horiguchi, Hiroaki Arimura, Thierry Conard, Dirk Rondas, Lars-Ake Ragnarsson, Andriy Hikavyy
المصدر: Solid State Phenomena. 314:49-53
مصطلحات موضوعية: 010302 applied physics, Materials science, Passivation, fungi, food and beverages, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Chemical engineering, Surface preparation, 0103 physical sciences, General Materials Science, 0210 nano-technology, Pressure oxidation
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0e89f989638b1677a358a89940ce9dea
https://doi.org/10.4028/www.scientific.net/ssp.314.49 -
6
المؤلفون: Harold Dekkers, Frank Holsteyns, Lars-Ake Ragnarsson, Naoto Horiguchi, Boon Teik Chan, Hideaki Iino, Yusuke Oniki, Daire J. Cott, Efrain Altamirano Sanchez, Toby Hopf, Farid Sebaai, Eugenio Dentoni Litta
المصدر: Solid State Phenomena. 314:119-126
مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Nanowire, Hardware_PERFORMANCEANDRELIABILITY, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Dipole, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, General Materials Science, Metal gate, business, Scaling, Hardware_LOGICDESIGN, Nanosheet
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::19006e5961359aac26a8f8e14ee2f174
https://doi.org/10.4028/www.scientific.net/ssp.314.119 -
7
المؤلفون: Narendra Parihar, Goutham Arutchelvan, Jacopo Franco, Sylvain Baudot, Ann Opedebeeck, Steven Demuynck, Hiroaki Arimura, Lars-Ake Ragnarsson, Jerome Mitard, Vincent De Heyn, Abdelkarim Mercha
المصدر: 2021 IEEE International Integrated Reliability Workshop (IIRW).
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::379c0969b9f758c2c5cea0b7c7f20ab2
https://doi.org/10.1109/iirw53245.2021.9635605 -
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المؤلفون: gabriel khalil el el hajjam, Jean-Philippe Soulie, Lars-Ake Ragnarsson, Geert Van den bosch, S. Ramesh, Maarten Rosmeulen, arjun ajaykumar, Attilio Belmonte, Laurent Breuil, Laura Nyns, Ben Kaczer
المصدر: Micromachines
Volume 12
Issue 9
Micromachines, Vol 12, Iss 1084, p 1084 (2021)مصطلحات موضوعية: Materials science, 3D NAND flash memory, NAND gate, Dielectric, work function, Article, metal gate, high-k, law.invention, Flash (photography), law, SiO2, TJ1-1570, Work function, Mechanical engineering and machinery, Electrical and Electronic Engineering, erase performance, Metal gate, High-κ dielectric, business.industry, Mechanical Engineering, interfacial reaction, Dipole, Capacitor, Control and Systems Engineering, effective work function, Optoelectronics, business, dipole, MHONOS
وصف الملف: application/pdf
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9
المؤلفون: Lionel Trojman, Nadine Collaert, Lars-Ake Ragnarsson
المساهمون: Laboratoire d'Informatique, Signal et Image, Electronique et Télécommunication (LISITE), Institut Supérieur d'Electronique de Paris (ISEP)
المصدر: Solid-State Electronics
Solid-State Electronics, Elsevier, 2019, 154, pp.24-30. ⟨10.1016/j.sse.2019.02.003⟩مصطلحات موضوعية: 010302 applied physics, Physics, Work (thermodynamics), 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Capacitance, Measure (mathematics), Electronic, Optical and Magnetic Materials, Computational physics, Threshold voltage, Reduction (complexity), symbols.namesake, Parasitic capacitance, Lambert W function, 0103 physical sciences, Materials Chemistry, symbols, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, 0210 nano-technology, ComputingMilieux_MISCELLANEOUS, Communication channel
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10
المؤلفون: Mandar S. Bhoir, Thomas Chiarella, Jerome Mitard, Nihar R. Mohapatra, Valentina Terzeiva, Naoto Horiguchi, Lars-Ake Ragnarsson
المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 1217-1224 (2019)
مصطلحات موضوعية: Gate dielectric, Fin width, 02 engineering and technology, 01 natural sciences, Fin (extended surface), Reduction (complexity), transconductance, 0103 physical sciences, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Scaling, 010302 applied physics, Physics, Condensed matter physics, variability, Conductance, 020202 computer hardware & architecture, Electronic, Optical and Magnetic Materials, technology scaling, sub-10nm fin-width, Logic gate, FinFET, lcsh:Electrical engineering. Electronics. Nuclear engineering, analog/RF, lcsh:TK1-9971, Biotechnology