نتائج البحث - "Laurent Favennec"

المساهمون: Clot, Marielle, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

المصدر: Journal of The Electrochemical Society
Journal of The Electrochemical Society, Electrochemical Society, 2012, pp.159, G49
Journal of The Electrochemical Society, 2012, pp.159, G49

مصطلحات موضوعية: Materials science, Renewable Energy, Sustainability and the Environment, Materials Chemistry, Electrochemistry, Dielectric, Composite material, Thin film, Condensed Matter Physics, Porosity, ComputingMilieux_MISCELLANEOUS, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f5c8695c93930ce1bfc9747938e89db
https://doi.org/10.1149/2.jes113605

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6

Ultralow k films by using a plasma-enhanced chemical vapor deposition porogen approach: Study of the precursor reaction mechanisms

المؤلفون: Gérard Passemard, Vincent Jousseaume, Arnaud Castex, Laurent Favennec, J. Deval, J. Bruat

المصدر: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:1343-1354

مصطلحات موضوعية: Silanes, Chemistry, Analytical chemistry, Oxide, Surfaces and Interfaces, Chemical vapor deposition, Condensed Matter Physics, Silane, Surfaces, Coatings and Films, chemistry.chemical_compound, Chemical engineering, Plasma-enhanced chemical vapor deposition, Molecule, Thin film, Organosilicon

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6cf8e0a1495081fdd8234c87445a3c5d
https://doi.org/10.1116/1.2953704

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7

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives

المصدر: 2014 IEEE International Electron Devices Meeting.

مصطلحات موضوعية: Bit cell, Materials science, business.industry, Heterojunction bipolar transistor, Electrical engineering, Ring oscillator, BiCMOS, Inductor, law.invention, Capacitor, CMOS, law, Extremely high frequency, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1a267063e241381b03eefae310424668
https://doi.org/10.1109/iedm.2014.7046978

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Study of plasma mechanisms of hybrid a-SiOC:H low-k film deposition from decamethylcyclopentasiloxane and cyclohexene oxide

المؤلفون: J. Bruat, Laurent Favennec, Vincent Jousseaume, B. Remiat, A. Castex, Michel Pons, J. Deval, Gérard Passemard

المصدر: Microelectronic Engineering. 82:416-421

مصطلحات موضوعية: chemistry.chemical_classification, Analytical chemistry, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Dissociation (chemistry), Fourier transform spectroscopy, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Hydrocarbon, Fragmentation (mass spectrometry), chemistry, Plasma-enhanced chemical vapor deposition, Molecule, Electrical and Electronic Engineering, Fourier transform infrared spectroscopy, Cyclohexene oxide

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8a86bf8072ad4bcbe79216d08db1fd76
https://doi.org/10.1016/j.mee.2005.07.025

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9

Mechanical stress in PECVD a-SiC:H: aging and plasma treatments effects

المؤلفون: O. Renault, Laurent Favennec, N. Rochat, Gérard Passemard, Vincent Jousseaume

المصدر: Materials Science in Semiconductor Processing. 7:301-305

مصطلحات موضوعية: Amorphous silicon, Materials science, Diffusion barrier, Passivation, Mechanical Engineering, Dangling bond, Analytical chemistry, Dielectric, Condensed Matter Physics, Carbide, Stress (mechanics), chemistry.chemical_compound, chemistry, Mechanics of Materials, Plasma-enhanced chemical vapor deposition, General Materials Science, Composite material

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6d93cb45a43c7c9eef62a5e12caef0f1
https://doi.org/10.1016/j.mssp.2004.09.109

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10

Porosity generation using hydrogen plasma assisted thermal curing for ultra low k material

المؤلفون: Vincent Jousseaume, Laurent Favennec, Olivier Gourhant, Patrick Maury, Aziz Zenasni

المساهمون: Clot, Marielle, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des technologies de la microélectronique (LTM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS), Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)

المصدر: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2008, pp.2102-2104
Microelectronic Engineering, 2008, pp.2102-2104

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d60a1d89e1496d5e395c2839c3e87c30
https://doi.org/10.1016/j.mee.2008.04.044

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