المؤلفون: Wang, Y., Zhang, Q., Li, P., Su, X., Dong, L., Chen, R., Zhang, L., Gai, T., Su, Y., Wei, Y., Ye, T.C.

المصدر: IEEE Journal of the Electron Devices Society IEEE J. Electron Devices Soc. Electron Devices Society, IEEE Journal of the. 9:6-9 2021

المؤلفون: Stalin, S M, Brahme, Amit, Ramakrishnan, Venkatraman, Mandal, Ajoy

المصدر: 2011 12th International Symposium on Quality Electronic Design Quality Electronic Design (ISQED), 2011 12th International Symposium on. :1-6 Mar, 2011

Relation: 2011 International Symposium on Quality Electronic Design (ISQED)

المؤلفون: Ying-Fei Wang, Qing-Chun Zhang, Ping Li, Xiao-Jing Su, Li-Song Dong, Rui Chen, Li-Bin Zhang, Tian-Yang Gai, Ya-Juan Su, Ya-Yi Wei, Tian Chun Ye

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 6-9 (2021)

مصطلحات موضوعية: Layout proximity effects, high-k HfO₂, stress memorization technique, Al diffusion, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9235562/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/3269a09e61a045ebb74841b3612bc1ff

المؤلفون: Yajuan Su, Qing-Chun Zhang, Ying-Fei Wang, Rui Chen, Tianyang Gai, Libin Zhang, Ping Li, Xiaojing Su, Lisong Dong, Yayi Wei, Tian Chun Ye

المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 6-9 (2021)

مصطلحات موضوعية: 010302 applied physics, Materials science, Dependency (UML), stress memorization technique, business.industry, Al diffusion, Process (computing), Layout proximity effects, 01 natural sciences, TK1-9971, Electronic, Optical and Magnetic Materials, Stress (mechanics), Logic gate, 0103 physical sciences, Trench, MOSFET, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Electrical engineering. Electronics. Nuclear engineering, Electrical and Electronic Engineering, business, Metal gate, high-k HfO₂, NMOS logic, Biotechnology

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be32dc7e74a79960d46c8021a0621ec0
https://doi.org/10.1109/jeds.2020.3032957