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1دورية أكاديمية
المؤلفون: Didon-Lescot, J.-F., Guillet, B., Lelong, F.
المصدر: Acta geológica hispánica; 1993: Vol.: 28 Núm.: 2 -3; p. 45-53
وصف الملف: application/pdf
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2مؤتمر
المؤلفون: Lescot, J., Haidar, J., Ndagijimana, F.
المصدر: 29th European Solid-State Device Research Conference Solid-State Device Research Conference, 1999. Proceeding of the 29th European. 1:668-671 1999
Relation: 29th European Solid-State Device Research Conference
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3مؤتمر
المؤلفون: Lescot, J., Rozeau, O., Boussey, J., Jomaah, J., Ndagijimana, F.
المصدر: 28th European Solid-State Device Research Conference Solid-State Device Research Conference, 1998. Proceeding of the 28th European. :440-443 1998
Relation: 28th European Solid-State Device Research Conference
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4مؤتمر
المؤلفون: Ribas, R.P., Lescot, J., Leclercq, J.L., Karam, J.M., Ndagijimana, F.
المصدر: GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260) GaAs IC Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1998. Technical Digest 1998., 20th Annual. :255-258 1998
Relation: GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1988
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5
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6دورية أكاديمية
المؤلفون: Ribas, R.P., Lescot, J., Leclercq, J.-L., Karam, J.M., Ndagijimana, F.
المصدر: IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 48(8):1326-1335 Aug, 2000
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7دورية أكاديمية
المؤلفون: Ribas, R.P., Lescot, J., Leclercq, J.L., Bennouri, N., Karam, J.M., Courtois, B.
المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 19(8):285-287 Aug, 1998
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8مؤتمر
المؤلفون: Rozeau, O., Jomaah, J., Boussey, J., Omura, Y., Lescot, J.
المصدر: 1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199) SOI conference SOI Conference, 1998. Proceedings., 1998 IEEE International. :27-28 1998
Relation: 1998 IEEE International SOI Conference Proceedings
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9كتاب إلكتروني
المؤلفون: Lescot, J.Aff3, Rozeau, O.Aff3, Aff4, Aff5, Jomaah, J.Aff4, Boussey, J.Aff4, Ndagijimana, F.Aff3
المساهمون: Hemment, Peter L. F., editorAff1, Lysenko, V. S., editorAff2, Nazarov, A. N., editorAff2
المصدر: Perspectives, Science and Technologies for Novel Silicon on Insulator Devices. 73:225-231
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10كتاب إلكتروني
المؤلفون: Lescot, J.Aff2, Haidar, J.Aff2, Giry, A.Aff3, Ndagijimana, F.Aff2
المساهمون: Grabinski, Hartmut, editorAff1
المصدر: Interconnects in VLSI Design. :119-131