المؤلفون: Xue, Lin, Ching, Chi, Kontos, Alex, Ahn, Jaesoo, Wang, Xiaodong, Whig, Renu, Tseng, Hsin-wei, Howarth, James, Hassan, Sajjad, Chen, Hao, Bangar, Mangesh, Liang, Shurong, Wang, Rongjun, Pakala, Mahendra

المصدر: 2018 IEEE Symposium on VLSI Technology VLSI Technology, 2018 IEEE Symposium on. :117-118 Jun, 2018

Relation: 2018 IEEE Symposium on VLSI Technology

المؤلفون: Yang, Bin, Lin, J.-Y. Jason, Gupta, Suyog, Roy, Arunanshu, Liang, Shurong, Maszara, W. P., Nishi, Yoshio, Saraswat, Krishna

المصدر: 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International. :1-2 Jun, 2012

Relation: 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM)

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المؤلفون: C. Ching, Mahendra Pakala, S. Kim, Lin Xue, Liang Shurong, Chando Park, Jimmy Kan, Seung H. Kang, A. Kontos, S. Hassan, Wang Rongjun, Mangesh Bangar, Jaesoo Ahn, H. Chen

المصدر: IEEE Transactions on Magnetics. 53:1-4

مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, Temperature sensitivity, Magnetoresistance, Condensed matter physics, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, Tunnel magnetoresistance, 0103 physical sciences, Perpendicular, Electrical and Electronic Engineering, 0210 nano-technology, Device parameters, Quantum tunnelling

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5bc964a83a7b17a83fff74f84aa1f586
https://doi.org/10.1109/tmag.2016.2615816

المؤلفون: H. Chen, Liang Shurong, Wang Rongjun, Hsin-Wei Tseng, S. Hassan, Mahendra Pakala, Mangesh Bangar, Lin Xue, C. Ching, Wang Xiaodong, Jaesoo Ahn, James Howarth, Renu Whig, A. Kontos

المصدر: 2018 IEEE Symposium on VLSI Technology.

مصطلحات موضوعية: 010302 applied physics, Materials science, 010308 nuclear & particles physics, business.industry, Process capability, 01 natural sciences, Tunnel magnetoresistance, Stack (abstract data type), 0103 physical sciences, Perpendicular, Optoelectronics, Process optimization, Node (circuits), Cache, business, Pulse-width modulation

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::256baf26d44eb110c8976cab4a9168c9
https://doi.org/10.1109/vlsit.2018.8510642

المؤلفون: Jaesoo Ahn, Jimmy Kan, Lin Xue, A. Kontos, Seung H. Kang, Mangesh Bangar, S. Kim, H. Chen, Chando Park, S. Hassan, Wang Rongjun, C. Ching, Liang Shurong, Mahendra Pakala

المصدر: 2016 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Materials science, Dielectric strength, business.industry, Electrical engineering, Time-dependent gate oxide breakdown, 02 engineering and technology, 01 natural sciences, Temperature measurement, 020202 computer hardware & architecture, CMOS, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Perpendicular, Breakdown voltage, Optoelectronics, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::5fc6184c8b304399fc3b2efc8c23bbd2
https://doi.org/10.1109/iedm.2016.7838493

المؤلفون: 梁书荣 Liang Shurong, 李洪岐 Li Hongqi, 王俊忠 Wang Junzhong, 蔺海明 Lin Haiming, 赵会杰 Zhao Huijie

المصدر: Acta Ecologica Sinica. 32:6584-6590

مصطلحات موضوعية: education.field_of_study, Sucrose, Ecology, fungi, Population, food and beverages, Sowing, Biology, Phosphate, Nitrate reductase, chemistry.chemical_compound, Horticulture, chemistry, Agronomy, Glutamine synthetase, Yield (chemistry), Cultivar, education, Ecology, Evolution, Behavior and Systematics

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::e15a56d936076697b360d67c6d5ca333
https://doi.org/10.5846/stxb201203050294

المؤلفون: Seung H. Kang, Matthias Georg Gottwald, Jimmy Kan, A. Kontos, H. Chen, C. Ching, Mahendra Pakala, Lin Xue, Liang Shurong, Mangesh Bangar, Chando Park, Xiaochun Zhu, Jaesoo Ahn, S. Hassan, Wang Rongjun

المصدر: 2015 IEEE International Electron Devices Meeting (IEDM).

مصطلحات موضوعية: Magnetoresistive random-access memory, Tunnel magnetoresistance, Tunnel barrier, Materials science, Gigabit, Annealing (metallurgy), business.industry, Electrical engineering, Perpendicular, Optoelectronics, business, Device parameters

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::87ab367b9c5ec7677a66ab32586f0929
https://doi.org/10.1109/iedm.2015.7409771

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