المؤلفون: Banerjee, Amal^Aff2

المساهمون: Banerjee, Amal^Aff1

المصدر: Semiconductor Devices : Diodes, Transistors, Solar Cells, Charge Coupled Devices and Solid State Lasers. :1-27

المؤلفون: Huang, F., Zhang, X.

المصدر: IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 58(1):1-9 Feb, 2022

المؤلفون: Samajdar, D. P., Dhar, S.

المصدر: International Conference on Electronics, Communication and Instrumentation (ICECI) Electronics, Communication and Instrumentation (ICECI), 2014 International Conference on. :1-4 Jan, 2014

Relation: 2014 International Conference on Electronics, Communication and Instrumentation (ICECI)

المؤلفون: Alexander M. Smirnov, Anastasia D. Golinskaya, Vladimir N. Mantsevich, Maria V. Kozlova, Kseniia V. Ezhova, Bedil M. Saidzhonov, Roman B. Vasiliev, Vladimir S. Dneprovskii

المصدر: Results in Physics, Vol 32, Iss , Pp 105120- (2022)

مصطلحات موضوعية: Nanoplatelets, CdSe, Optical gain, Exciton, Heavy hole, Light hole, Physics, QC1-999

وصف الملف: electronic resource

Relation: http://www.sciencedirect.com/science/article/pii/S2211379721010901; https://doaj.org/toc/2211-3797

URL الوصول: https://doaj.org/article/5b33ba9f92604d29be8469c5649385f7

المؤلفون: Kasper, E., Editor^Aff10_1, Klingshirn, C., Editor^Aff11_1, Kasper, E.^Aff100_2, Martienssen, W., Editor-in-Chief^Aff10_3

المصدر: Optical Properties. Part 3. 01/01/2007. 34C3:19-25

المؤلفون: Safwan, S. A.^Aff1, El Meshad, Nagwa

المصدر: Journal of Electronic Materials. 48(10):6716-6723

المؤلفون: Xiangjun Shang, Hanqing Liu, Xiangbin Su, Shulun Li, Huiming Hao, Deyan Dai, Zesheng Chen, Haiqiao Ni, Zhichuan Niu

المصدر: Crystals, Vol 12, Iss 8, p 1116 (2022)

مصطلحات موضوعية: strain-coupled bilayer QDs, fine-structure splitting, valence-band mixing, light hole, Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/12/8/1116; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/1d2c5bff25904393ac8fa144e4b6556e

المؤلفون: Hind Althib

المصدر: Crystals, Vol 12, Iss 8, p 1166 (2022)

مصطلحات موضوعية: InGaN/GaN, quantum resonant tunneling, parabolic quantum well/LED, heavy hole, light hole, multiple quantum wells, Crystallography, QD901-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2073-4352/12/8/1166; https://doaj.org/toc/2073-4352

URL الوصول: https://doaj.org/article/5ac93303af9e4fcfa14b7f2a9ceb5c2e

المؤلفون: Xiangjun Shang, Shulun Li, Hanqing Liu, Xiangbin Su, Huiming Hao, Deyan Dai, Xiaoming Li, Yuanyuan Li, Yuanfei Gao, Xiuming Dou, Haiqiao Ni, Zhichuan Niu

المصدر: Nanomaterials, Vol 12, Iss 7, p 1219 (2022)

مصطلحات موضوعية: InAs quantum dot, fine structure splitting, thermal stress, light hole level, photon pair, polarization correlation, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/12/7/1219; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/e9dc848ea06d490fb4743f5a914103f8

المؤلفون: Phan, Hoang-Phuong^Aff2

المساهمون: Phan, Hoang-Phuong^Aff1

المصدر: Piezoresistive Effect of p-Type Single Crystalline 3C-SiC : Silicon Carbide Mechanical Sensors for Harsh Environments. :31-47