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1دورية أكاديمية
المؤلفون: Bencherif, HichemAff1, Dehimi, LakhdarAff2, Aff3, Athamena, Nour eddine, Pezzimenti, Fortunato, Megherbi, Mohamed Larbi, Della Corte, Francesco Giuseppe
المصدر: Silicon. 13(10):3629-3637
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المؤلفون: Lakhdar Dehimi, Nour eddine Athamena, Fortunato Pezzimenti, H. Bencherif, M.L. Megherbi, Francesco G. Della Corte
المساهمون: Bencherif, H., Dehimi, L., Athamena, N., Pezzimenti, F., Megherbi, M. L., Della Corte, F. G.
المصدر: Silicon. 13:3629-3637
مصطلحات موضوعية: 4H-SiC, Materials science, Band gap, Defect state, chemistry.chemical_element, 02 engineering and technology, Trapping, 01 natural sciences, ON-state resistance, Vacancy defect, 0103 physical sciences, MOSFET, Device modeling, 010302 applied physics, Inert, Computer simulation, business.industry, Low power MOSFET, 021001 nanoscience & nanotechnology, Electronic, Optical and Magnetic Materials, Threshold voltage, chemistry, Optoelectronics, 0210 nano-technology, business, Carbon