المؤلفون: J. S. Steckel, E. Josse, A. G. Pattantyus-Abraham, M. Bidaud, B. Mortini, H. Bilgen, O. Arnaud, S. Allegret-Maret, F. Saguin, L. Mazet, S. Lhostis, T. Berger, K. Haxaire, L. L. Chapelon, L. Parmigiani, P. Gouraud, M. Brihoum, P. Bar, M. Guillermet, S. Favreau, R. Duru, J. Fantuz, S. Ricq, D. Ney, I. Hammad, D. Roy, A. Arnaud, B. Vianne, G. Nayak, N. Virollet, V. Farys, P. Malinge, A. Tournier, F. Lalanne, A. Crocherie, J. Galvier, S. Rabary, O. Noblanc, H. Wehbe-Alause, S. Acharya, A. Singh, J. Meitzner, D. Aher, H. Yang, J. Romero, B. Chen, C. Hsu, K. C. Cheng, Y. Chang, M. Sarmiento, C. Grange, E. Mazaleyrat, K. Rochereau

المصدر: 2021 IEEE International Electron Devices Meeting (IEDM).

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f9ba7ab2beceb487279311b475596647
https://doi.org/10.1109/iedm19574.2021.9720560

المؤلفون: Florian Cacho, Eric Fogarassy, H. Bono, Remi Beneyton, A. Colin, Daniel Mathiot, Pierre Morin, M. Bidaud

المصدر: Materials Science and Engineering: B. :31-34

مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Transistor, Dopant Activation, Condensed Matter Physics, Laser, Die (integrated circuit), law.invention, CMOS, Mechanics of Materials, law, Shallow trench isolation, Heat transfer, Optoelectronics, General Materials Science, Wafer, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cdaf6d5132b85311569606b89a209b74
https://doi.org/10.1016/j.mseb.2008.09.009

المؤلفون: Maud Vinet, Thomas Signamarcheix, V. Lu, Julie Widiez, Fabien Clermidy, A. Royer, J. Mazurier, M.-P. Samson, F. Piegas-Luce, Fabrice Nemouchi, L. Pasini, J.M. Hartmann, M. Casse, F. Deprat, Laurent Brunet, N. Rambal, Maurice Rivoire, Perceval Coudrain, M. Bidaud, Ogun Turkyilmaz, Hossam Sarhan, F. Ponthenier, G. Ghibaudo, C. Euvard-Colnat, Perrine Batude, Louis Hutin, Sebastien Kerdiles, Claude Tabone, Emmanuel Josse, L. Benaissa, E. Petitprez, Remi Beneyton, Claire Fenouillet-Beranger, L. Hortemel, G. Cibrario, Pascal Besson, A. Seignard, B. Mathieu, F. Fournel, C. Bout, C. Agraffeil, S. Sollier, Michel Haond, O. Billoint, P. Leduc, O. Rozeau, Benoit Sklenard, Sebastien Thuries, Bernard Previtali, O. Faynot

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics, ANR-10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010), European Project: 619325,EC:FP7:ICT,FP7-ICT-2013-11,COMPOSE3(2013), Laboratoire d'Electronique et des Technologies de l'Information (CEA-LETI), Université Grenoble Alpes (UGA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), ANR-10-EQPX-0030/10-EQPX-0030,FDSOI11,Plateforme FDSOI pour le node 11nm(2010)

المصدر: 2015 VLSI-Technology Technical Digest
2015 IEEE Symposium on VLSI Technology
2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T48-T49, ⟨10.1109/VLSIT.2015.7223698⟩

مصطلحات موضوعية: 010302 applied physics, Very-large-scale integration, Materials science, business.industry, Transistor, Stacking, Electrical engineering, 02 engineering and technology, Direct bonding, Dopant Activation, 01 natural sciences, 7. Clean energy, 020202 computer hardware & architecture, law.invention, law, 0103 physical sciences, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Process optimization, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Scaling

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c2ded39939fef69ac4246deba1297f1
https://hal.archives-ouvertes.fr/hal-02049760

المؤلفون: L. Vishnubhotla, Pierre Morin, Robert Fox, S. Boret, R. Difrenza, B. Tavel, K. Rochereau, P. Stolk, C. Detcheverry, Daniel Gloria, M.T. Basso, M. Woo, M. Broekaart, B. Duriez, P. Garnier, D. Reber, Y. Trouille, J. Bienacel, M. Denais, D. Barge, C. Ortolland, K. Cooper, Frederic Boeuf, S. Vanbergue, Vincent Huard, Jean-Damien Chapon, J. Belledent, Pascal Gouraud, Nicolas Planes, Franck Arnaud, P. Abramowitz, E. Saboure, Y. Laplanche, C. Julien, M. Bidaud, M. Marin, Romain Gwoziecki

المصدر: Solid-State Electronics. 50:573-578

مصطلحات موضوعية: Engineering, business.industry, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Ring oscillator, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, law.invention, CMOS, law, Low-power electronics, Dynamic demand, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, Electronic engineering, Power semiconductor device, Flicker noise, Electrical and Electronic Engineering, business, Low voltage, NMOS logic

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2a1f438c93e06660abf827ae1f1027bf
https://doi.org/10.1016/j.sse.2006.03.030

المؤلفون: F. Guyader, O. Simonetti, Gerard Ghibaudo, M. Bidaud, Mouenes Fadlallah

المصدر: Microelectronic Engineering. 72:241-246

مصطلحات موضوعية: Materials science, business.industry, Gate dielectric, Oxide, Equivalent oxide thickness, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, PMOS logic, chemistry.chemical_compound, International Technology Roadmap for Semiconductors, chemistry, Gate oxide, Optoelectronics, SILC, Electrical and Electronic Engineering, business, NMOS logic

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3b7272f8869630ca2a5881e82b3d4074
https://doi.org/10.1016/j.mee.2003.12.044

المؤلفون: A. Meinertzhagen, O. Simonetti, Gerard Ghibaudo, M. Bidaud, C. Petit, Mouenes Fadlallah, F. Guyader

المصدر: Microelectronics Reliability. 43:1433-1438

مصطلحات موضوعية: Materials science, business.industry, Time-dependent gate oxide breakdown, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, PMOS logic, Gate oxide, Degradation (geology), Optoelectronics, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, business, Thin oxide, Gate current

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8234de063c2a01db266adbad57524315
https://doi.org/10.1016/s0026-2714(03)00255-5

المؤلفون: B. Le-Gratiet, G. Druais, Denis Rideau, Marie-Anne Jaud, J.-D. Chapon, D. Hoguet, M. Mellier, L. Babaud, Clement Pribat, Emmanuel Josse, D. Barge, S. Puget, J. Mazurier, L. Grenouillet, Nicolas Loubet, S. Zoll, Thierry Poiroux, Jerome Simon, S.P. Fetterolf, M. Bidaud, S. Chhun, M. Vinet, Quanwei Liu, R. Bianchini, E. Bernard, J.-F. Kruck, X. Gerard, C. Gaumer, A. Pofelski, Francois Andrieu, Mustapha Rafik, Olivier Weber, N. Guillot, Pascal Gouraud, F. Abbate, O. Faynot, N. Degors, Olivier Gourhant, Antoine Cros, L. Parmigiani, E. Petitprez, J. Lacord, Patrick Scheer, C. Monget, Michel Haond, Evelyne Richard, P. Maury, Bruce B. Doris, M. Celik, Daniel Benoit, Frederic Monsieur, E. Baylac, L. Clément, S. Lagrasta, Magali Gregoire, J.-P. Manceau, S. Lasserre, P. Perreau, P. Brun, C. Gallon, V. Beugin, Remi Beneyton, Eric Perrin, S. Delmedico, R. Bingert

المصدر: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

مصطلحات موضوعية: Very-large-scale integration, business.industry, Computer science, Transistor, Electrical engineering, law.invention, law, Logic gate, MOSFET, Dynamic demand, Electronic engineering, Static random-access memory, business, Electrical efficiency, Efficient energy use

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::aedffd54e01f33ec4661fa88cc9e090c
https://doi.org/10.1109/vlsit.2014.6894343

المؤلفون: F. Guyader, Kathy Barla, Franck Arnaud, Jean-Luc Autran, M. Bidaud

المصدر: Journal of Non-Crystalline Solids. 280:32-38

مصطلحات موضوعية: Materials science, business.industry, Gate dielectric, Process (computing), Oxide, Nanotechnology, Equivalent oxide thickness, Hardware_PERFORMANCEANDRELIABILITY, Condensed Matter Physics, Engineering physics, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Semiconductor, chemistry, Rapid thermal processing, Gate oxide, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, Ceramics and Composites, Miniaturization, business, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::eed82b6fd5b1f2a6c4a7d63834e2f72b
https://doi.org/10.1016/s0022-3093(00)00351-3

المؤلفون: M. Lefranc, J. Peltier, M. Bidaud, T.H. Reix

المصدر: La Revue de Médecine Interne. 30:625-627

مصطلحات موضوعية: medicine.medical_specialty, Aorta, business.industry, Vascular disease, Abdominal aorta, Gastroenterology, medicine.disease, Surgery, Aortic aneurysm, Aneurysm, medicine.anatomical_structure, medicine.artery, Epidemiology, cardiovascular system, Internal Medicine, Medicine, Presentation (obstetrics), business, Artery

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::2ff3bf035aff8aef958054bcaf0323b6
https://doi.org/10.1016/j.revmed.2008.08.012

المؤلفون: J. Bienacel, Kathy Barla, D. Roy, M. Bidaud, L. Vishnubhotla, N. Emonet, D. Barge, I. Pouilloux

المصدر: Materials Science in Semiconductor Processing. 7:181-183

مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Gate dielectric, Oxide, Dielectric, Condensed Matter Physics, Capacitance, chemistry.chemical_compound, chemistry, X-ray photoelectron spectroscopy, Mechanics of Materials, Gate oxide, Optoelectronics, General Materials Science, business, NMOS logic, Nitriding

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a76648bfcbc2be3991a6dce859fa179a
https://doi.org/10.1016/j.mssp.2004.09.014