المؤلفون: R. Mantovan 1, R. Fallica 1, A. Mokhles Gerami 2, 3, T. E. Mølholt 2, C. Wiemer 1, M. Longo 1, H. P. Gunnlaugsson 4, K. Johnston 2, H. Masenda 5, D. Naidoo 5, M. Ncube 5, K. Bharuth-Ram 6, 7, M. Fanciulli 1, 8, H. P. Gislason 4, G. Langouche 9, S. Ólafsson 4, G. Weyer 10

المساهمون: Raunvísindastofnun (HÍ), Science Institute (UI), Verkfræði- og náttúruvísindasvið (HÍ), School of Engineering and Natural Sciences (UI), Háskóli Íslands, University of Iceland

المصدر: Scientific Reports
Scientific reports (Nature Publishing Group) 7 (2017): 8234. doi:10.1038/s41598-017-08275-5
info:cnr-pdr/source/autori:R. Mantovan 1, R. Fallica 1,11, A. Mokhles Gerami 2,3, T. E. Mølholt 2, C. Wiemer 1, M. Longo 1, H. P. Gunnlaugsson 4, K. Johnston 2, H. Masenda 5, D. Naidoo 5, M. Ncube 5, K. Bharuth-Ram 6,7, M. Fanciulli 1,8, H. P. Gislason 4, G. Langouche 9, S. Ólafsson 4 & G. Weyer 10/titolo:Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films/doi:10.1038%2Fs41598-017-08275-5/rivista:Scientific reports (Nature Publishing Group)/anno:2017/pagina_da:8234/pagina_a:/intervallo_pagine:8234/volume:7
Mantovan, R, Fallica, R, Gerami, A M, Molholt, T E, Wiemer, C, Longo, M, Gunnlaugsson, H P, Johnston, K, Masenda, H, Naidoo, D, Ncube, M, Bharuth-Ram, K, Fanciulli, M, Gislason, H P, Langouche, G, Olafsson, S & Weyer, G 2017, ' Atomic-scale study of the amorphous-to-crystalline phase transition mechanism in GeTe thin films ', Scientific Reports, vol. 7, 8234 . https://doi.org/10.1038/s41598-017-08275-5
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)

مصطلحات موضوعية: Information storage, Phase transition, Materials science, Science, MOSSBAUER-SPECTROSCOPY, LOCAL-STRUCTURE, Mossbauer spectroscopy, SOLIDS, 02 engineering and technology, Elementary charge, 01 natural sciences, Atomic units, GERMANIUM, Article, law.invention, law, 0103 physical sciences, Thin film, Crystallization, SILICON, 010306 general physics, CONFIGURATION, FE IMPURITIES, Multidisciplinary, Condensed matter physics, Atómfræði, GeTe, 021001 nanoscience & nanotechnology, Amorphous solid, ELECTRONIC-STRUCTURE, Phase transitions and critical phenomena, Chemical bond, Medicine, Density functional theory, 0210 nano-technology, Eðlisfræði

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d305c04b8e3c8e28f6647b7e80913ede
https://doi.org/10.1038/s41598-017-08275-5

المؤلفون: M. Begotti 1, M. Longo 1, R. Magnanini 1, A. Parisini 1, L. Tarricone 1, C. Bocchi 2, L. Lazzarini 2, L. Nasi 2, M. Geddo 3

المصدر: info:cnr-pdr/source/autori:M. Begotti 1, M. Longo 1, R. Magnanini 1, A. Parisini 1, L. Tarricone 1, C. Bocchi 2, L. Lazzarini 2, L. Nasi 2, M. Geddo 3/congresso_nome:10th Europeam Workshop on Metalorganic Vapour Phase Epitaxy/congresso_luogo:Lecce/congresso_data:8-11 Giugno 2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine

مصطلحات موضوعية: InGaP/GaAs, interface, MOVPE liquid sources

URL الوصول: https://explore.openaire.eu/search/publication?articleId=cnr_________::b3aab2ae0557700997ef25658858cf38

المؤلفون: M. Longo 1, N. Lovergine 1, A. M. Mancini 1, A. Passaseo 1, G. Leo 2, M. Mazzer 2, M. Berti 3, A. V. Drigo 3

المصدر: Applied physics letters 72 (1998): 359–361.
info:cnr-pdr/source/autori:M. Longo 1; N. Lovergine 1, A. M. Mancini 1; A. Passaseo 1; G. Leo 2; M. Mazzer 2; M. Berti 3; A. V. Drigo 3/titolo:Self-organized growth of ZnTe nanoscale islands on (001)GaAs/doi:/rivista:Applied physics letters/anno:1998/pagina_da:359/pagina_a:361/intervallo_pagine:359–361/volume:72

URL الوصول: https://explore.openaire.eu/search/publication?articleId=cnr_________::43ea215d2cd98daa386e28f93590abc7
https://publications.cnr.it/doc/176321