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1
المؤلفون: H. Araki, Yoshihisa Iwata, Y. Itoh, T. Watanabe, Junichi Miyamoto, Hiroshi Nakamura, K. Imamiya, Yoshihisa Sugiura, H. Oodaira, Kazuhito Narita, K. Masuda, M. Momodomi
المصدر: IEEE Journal of Solid-State Circuits. 30:1157-1164
مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, business.industry, Computer science, Pipeline (computing), NAND gate, law.invention, Flash (photography), CMOS, law, Electrical and Electronic Engineering, EPROM, business, Computer hardware, Access time, EEPROM, Block (data storage)
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2
المؤلفون: M. Momodomi, H. Oodaira, Kazuya Ohuchi, Yoshihisa Iwata, Y. Itoh, Yoshiyuki Tanaka, F. Masuoka, Tomoharu Tanaka, R. Shirota
المصدر: IEEE Journal of Solid-State Circuits. 26:492-496
مصطلحات موضوعية: Very-large-scale integration, Hardware_MEMORYSTRUCTURES, business.industry, Computer science, NAND gate, T distribution, Die (integrated circuit), law.invention, Threshold voltage, CMOS, law, Optoelectronics, Electrical and Electronic Engineering, EPROM, business, Computer hardware, EEPROM
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3
المؤلفون: Seiichi Aritome, H. Oodaira, Tetsuo Endoh, Ryozo Nakayama, M. Momodomi, Yoshihisa Iwata, Ryouhei Kirisawa, Tomoharu Tanaka, Kazunori Ohuchi, R. Shirota, Fujio Masuoka, Y. Itoh
المصدر: IEEE Journal of Solid-State Circuits. 25:417-424
مصطلحات موضوعية: Very-large-scale integration, business.industry, Computer science, Circuit design, NAND gate, law.invention, Microprocessor, CMOS, law, Embedded system, Microcomputer, Electrical and Electronic Engineering, EPROM, business, Computer hardware, Block (data storage), EEPROM
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4
المؤلفون: M. Momodomi, Toru Tanzawa, Kazuya Ohuchi, Hiroaki Nakano, Shinichiro Shiratake, Tomoharu Tanaka, F. Masuoka, Hiroshi Nakamura, Yoshiyuki Tanaka, H. Oodaira, Shigeyoshi Watanabe, Yukihito Oowaki, Koji Sakui
المصدر: Proceedings of 1994 IEEE Symposium on VLSI Circuits.
مصطلحات موضوعية: Flash (photography), Boosting (machine learning), Materials science, Electricity generation, business.industry, Electrical engineering, Charge pump, EPROM, business, Low voltage, Capacitance, Flash memory
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ed6b8d490ce969bd792867afeedea1f0
https://doi.org/10.1109/vlsic.1994.586217 -
5
المؤلفون: Masayuki Ichige, Atsuhiro Sato, Masaaki Higashitani, M. Momodomi, Hisataka Meguro, Shigeki Takahashi, H. Iizuka, Tadashi Iguchi, R. Shirota, N. Arai, T. Miwa, Takeshi Kamigaichi, N. Kawai, S. Miyazaki, S. Tamon, T. Minami, Michiharu Matsui, Tuan Pham, Yoshiaki Takeuchi, G. Hemink, H. Kamata, Y. Ishibashi, Kikuko Sugimae, Hiroyuki Kutsukake, S. Mori, Masanobu Saito
المصدر: 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Materials science, business.industry, Nand flash memory, Transistor, NAND gate, law.invention, Flash (photography), law, Gigabit, Shallow trench isolation, Charge trap flash, Electronic engineering, Optoelectronics, Node (circuits), business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1a39d948fdea82af3af180691174d3b3
https://doi.org/10.1109/vlsit.2003.1221100 -
6
المؤلفون: Y. Itoh, H. Oodaira, Tomoharu Tanaka, F. Masuoka, Ryozo Nakayama, Yoshihisa Iwata, R. Shirota, Tetsuro Endoh, M. Momodomi, Ryouhei Kirisawa, Masahiko Chiba, Seiichi Aritome
المصدر: Technical Digest., International Electron Devices Meeting.
مصطلحات موضوعية: Engineering, business.industry, NAND gate, law.invention, Reliability (semiconductor), CMOS, law, Electronic engineering, New device, EPROM, Cmos process, business, Computer hardware, Voltage, EEPROM
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ac1e98c4aa97c2496f689b69a27eda22
https://doi.org/10.1109/iedm.1988.32843 -
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المؤلفون: F. Masuoka, F. Hatori, M. Momodomi, Ryozo Nakayama, Ryouhei Kirisawa, Yasuo Itoh, R. Shirota, Seiichi Aritome, Koji Sakui, Tetsuo Endoh
المصدر: International Technical Digest on Electron Devices.
مصطلحات موضوعية: Physics, Very-large-scale integration, Cellular array, business.industry, Transistor, NAND gate, law.invention, Cell size, law, Memory cell, Electronic engineering, Optoelectronics, EPROM, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::756fc46a049acad5084611d78564510e
https://doi.org/10.1109/iedm.1990.237216 -
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المؤلفون: K. Imamiya, Y. Iwata, Y. Sugiura, H. Nakamura, H. Oodaira, M. Momodomi, Y. Ito, T. Watanabe, H. Araki, K. Narita, K. Masuda, J. Miyamoto
المصدر: Proceedings ISSCC '95 - International Solid-State Circuits Conference.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::54f374f8f965d5b13d35d600286bcc62
https://doi.org/10.1109/isscc.1995.535461 -
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المؤلفون: F. Masuoka, Yoshihisa Iwata, Y. Itoh, Tomoharu Tanaka, M. Momodomi, H. Oodaira, R. Shirota, Kazuya Ohuchi, Yoshiyuki Tanaka
المصدر: Digest of Technical Papers., 1990 Symposium on VLSI Circuits.
مصطلحات موضوعية: Physics, Cellular array, law, Megabit, NAND gate, T distribution, EPROM, Topology, Threshold voltage, EEPROM, law.invention
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6543511d854e506ddda7775e03d43aea
https://doi.org/10.1109/vlsic.1990.111117 -
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المؤلفون: H. Iizuka, K. Hieda, Makoto Wada, T. Shibata, S. Inoue, M. Momodomi
المصدر: IEEE Transactions on Electron Devices. 32:1776-1780
مصطلحات موضوعية: Engineering, business.industry, Orders of magnitude (temperature), Transistor, Electrical engineering, Biasing, Chip, Electronic, Optical and Magnetic Materials, law.invention, law, Electronic engineering, State (computer science), Electrical and Electronic Engineering, Data retention, business, Voltage, EEPROM