يعرض 1 - 10 نتائج من 37 نتيجة بحث عن '"M. Perumkunnil"', وقت الاستعلام: 1.10s تنقيح النتائج
  1. 1
    Design exploration of IGZO diode based VCMA array design for Storage Class Memory Applications

    المؤلفون: M. Gupta, M. Perumkunnil, A. Fantini, S. A. Chamazcoti, W. Kim, M.G. Bardon, G.S. Kar, A. Furnemont

    المصدر: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::11081baff492237f624e7afe5a3f5021
    https://doi.org/10.1109/essderc55479.2022.9947187

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  2. 2
    Workload-Aware Electromigration Analysis in Emerging Spintronic Memory Arrays

    المؤلفون: Timon Evenblij, Kristof Croes, Tommaso Marinelli, Sarath Mohanachandran Nair, Houman Zahedmanesh, Gouri Sankar Kar, Kevin Garello, Francky Catthoor, M. Perumkunnil, Mehdi B. Tahoori, Mahta Mayahinia

    المصدر: IEEE Transactions on Device and Materials Reliability. 21:258-266

    مصطلحات موضوعية: 010302 applied physics, Hardware_MEMORYSTRUCTURES, Spintronics, Computer science, Spin-transfer torque, ComputerApplications_COMPUTERSINOTHERSYSTEMS, 01 natural sciences, Electromigration, Electronic, Optical and Magnetic Materials, Power (physics), Reliability (semiconductor), Electric power transmission, 0103 physical sciences, Electronic engineering, Static random-access memory, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Current density

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::75dfee884c04b6adfa3c560a5a50e9a3
    https://doi.org/10.1109/tdmr.2021.3074251

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  3. 3
    IGZO-Based Compute Cell for Analog In-Memory Computing—DTCO Analysis to Enable Ultralow-Power AI at Edge

    المؤلفون: M. H. Na, Attilio Belmonte, J. Doevenspeck, Nouredine Rassoul, Romain Delhougne, Arindam Mallik, D. Saito, Ioannis A. Papistas, Gouri Sankar Kar, Stefan Cosemans, M. Perumkunnil, Peter Debacker, H. Oh, Diederik Verkest

    المصدر: IEEE Transactions on Electron Devices. 67:4616-4620

    مصطلحات موضوعية: 010302 applied physics, Indium gallium zinc oxide, Artificial neural network, Computer science, 01 natural sciences, Electronic, Optical and Magnetic Materials, Power (physics), In-Memory Processing, 0103 physical sciences, Benchmark (computing), Electronic engineering, Field-effect transistor, Enhanced Data Rates for GSM Evolution, Electrical and Electronic Engineering, Efficient energy use

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::6bdd3ace0c527f208a22365edce5cd77
    https://doi.org/10.1109/ted.2020.3025986

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  4. 4
    J SWof 5.5 MA/cm2 and RA of 5.2-Ω · μm2 STT-MRAM Technology for LLC Application

    المؤلفون: Siddharth Rao, Sebastien Couet, M. Perumkunnil, Francky Catthoor, Gouri Sankar Kar, Arnaud Furnemont, Sushil Sakhare, D. Crotti, Simon Van Beek

    المصدر: IEEE Transactions on Electron Devices. 67:3618-3625

    مصطلحات موضوعية: 010302 applied physics, Physics, Magnetoresistive random-access memory, Hardware_MEMORYSTRUCTURES, business.industry, Spice, 01 natural sciences, Electronic, Optical and Magnetic Materials, CMOS, 0103 physical sciences, Optoelectronics, Breakdown voltage, Node (circuits), Cache, Static random-access memory, Electrical and Electronic Engineering, business, Energy (signal processing)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::75e49ac7735662127937c5e889d5b283
    https://doi.org/10.1109/ted.2020.3012123

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  5. 5
    Power, Performance, Area and Cost Analysis of Memory-on-Logic Face-to-Face Bonded 3D Processor Designs

    المؤلفون: M. Perumkunnil, Moritz Brunion, Alberto Garcia-Ortiz, Sung Kyu Lim, Dragomir Milojevic, Jinwoo Kim, Francky Catthoor, Anthony Agnesina

    المصدر: ISLPED

    مصطلحات موضوعية: Footprint, Manycore processor, Reduction (complexity), Computer science, law, Semiconductor device modeling, Solid modeling, Integrated circuit, Implementation, Reliability engineering, law.invention, Power (physics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::a0517e6d0933f87a29f7de8245d40e4d
    https://doi.org/10.1109/islped52811.2021.9502475

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  6. 6
    Voltage-Gate-Assisted Spin-Orbit-Torque Magnetic Random-Access Memory for High-Density and Low-Power Embedded Applications

    المؤلفون: Gouri Sankar Kar, Kevin Garello, S. Van Beek, M. Perumkunnil, Siddharth Rao, R. Carpenter, D. Crotti, Mohit Kumar Gupta, Y. C. Wu, V. Kateel, F. Yasin, K. K. Vudya Sethu, Sebastien Couet, W. Kim

    المساهمون: IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), SPINtronique et TEchnologie des Composants (SPINTEC), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)

    المصدر: Physical Review Applied
    Physical Review Applied, American Physical Society, 2021, 15 (6), ⟨10.1103/PhysRevApplied.15.064015⟩
    Physical Review Applied, 2021, 15 (6), ⟨10.1103/PhysRevApplied.15.064015⟩

    مصطلحات موضوعية: Physics, Magnetoresistive random-access memory, Condensed Matter - Mesoscale and Nanoscale Physics, business.industry, Computation, Electrical engineering, FOS: Physical sciences, General Physics and Astronomy, 02 engineering and technology, Dissipation, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, 01 natural sciences, Power (physics), Magnetic anisotropy, Mesoscale and Nanoscale Physics (cond-mat.mes-hall), 0103 physical sciences, Perpendicular, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], 010306 general physics, 0210 nano-technology, business, Voltage, Spin-½

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aef3b3585ae366425dd792a097d797fe
    https://doi.org/10.1103/physrevapplied.15.064015

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  7. 7
    STT-MRAM array performance improvement through optimization of Ion Beam Etch and MTJ for Last-Level Cache application

    المؤلفون: D. Crotti, F. Yasin, W. Kim, N. Jossart, Sebastien Couet, S. Van Beek, Ludovic Goux, Shreya Kundu, Gouri Sankar Kar, Stefan Cosemans, S. H. Sharifi, R. Carpenter, Siddharth Rao, M. Perumkunnil, Barry O'Sullivan, Laurent Souriau

    المصدر: 2021 IEEE International Memory Workshop (IMW).

    مصطلحات موضوعية: Reduction (complexity), Magnetoresistive random-access memory, Reliability (semiconductor), Materials science, CMOS, Ion beam, business.industry, Optoelectronics, Node (circuits), Beak formation, business, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ff356c441065c3678a40f01fec3caaf2
    https://doi.org/10.1109/imw51353.2021.9439592

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  8. 8
    Memory Hierarchy Calibration Based on Real Hardware In-order Cores for Accurate Simulation

    المؤلفون: Timon Evenblij, M. Perumkunnil, Lionel Torres, Quentin Huppert, Francky Catthoor, David Novo

    المساهمون: ADAptive Computing (ADAC), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven)

    المصدر: Design, Automation & Test in Europe Conference & Exhibition (DATE)
    Design, Automation & Test in Europe Conference & Exhibition (DATE), Feb 2021, Virtual, France
    DATE 2021-24th Design, Automation and Test in Europe Conference and Exhibition
    DATE 2021-24th Design, Automation and Test in Europe Conference and Exhibition, Feb 2021, Grenoble (Virtual), France. pp.707-710, ⟨10.23919/DATE51398.2021.9474108⟩
    DATE

    مصطلحات موضوعية: 010302 applied physics, computer system simulation, [INFO.INFO-AR]Computer Science [cs]/Hardware Architecture [cs.AR], Memory hierarchy, business.industry, Computer science, media_common.quotation_subject, Parameterized complexity, Spec#, memory hierarchy, 02 engineering and technology, 01 natural sciences, 020202 computer hardware & architecture, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Key (cryptography), Calibration, Quality (business), Architecture, business, Baseline (configuration management), computer, Computer hardware, media_common, computer.programming_language

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5820e2e551db7837245381fa5b9e21e
    https://hal-lirmm.ccsd.cnrs.fr/lirmm-03084343/file/Date_2021_QH.pdf

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  9. 9
    System exploration and technology demonstration of 3D Wafer-to-Wafer integrated STT-MRAM based caches for advanced Mobile SoCs

    المؤلفون: Shairfe Muhammad Salahuddin, Gouri Sankar Kar, Julien Ryckaert, Eric Beyne, Dragomir Milojevic, G. Van der Plas, Siddharth Rao, M. Perumkunnil, Arnaud Furnemont, F. Yasin

    المصدر: 2020 IEEE International Electron Devices Meeting (IEDM).

    مصطلحات موضوعية: Scheme (programming language), Magnetoresistive random-access memory, Hardware_MEMORYSTRUCTURES, Exploit, business.industry, Computer science, Process (computing), Reduction (complexity), Footprint, Embedded system, Static random-access memory, Performance improvement, business, computer, computer.programming_language

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0256a9241bf9f9f68500f9af4f861511
    https://doi.org/10.1109/iedm13553.2020.9372046

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  10. 10
    High-density SOT-MRAM technology and design specifications for the embedded domain at 5nm node

    المؤلفون: Arnaud Furnemont, F. Yasin, Gouri Sankar Kar, M. Perumkunnil, Siddharth Rao, Mohit Kumar Gupta, Kevin Garello

    المساهمون: University of Leuven K.U.Leuven, IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), This work was supported by IMEC’s Industrial Affiliation Program on Memory Design.

    المصدر: 2020 IEEE International Electron Devices Meeting (IEDM)
    2020 IEEE International Electron Devices Meeting (IEDM), Dec 2020, San Francisco (virtuel), United States. pp.24.5.1-24.5.4, ⟨10.1109/IEDM13553.2020.9372068⟩

    مصطلحات موضوعية: 010302 applied physics, Magnetoresistive random-access memory, Computer science, Process (computing), 01 natural sciences, Non-volatile memory, 0103 physical sciences, Electronic engineering, Torque, Node (circuits), Static random-access memory, Macro, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Design technology

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e61dae377d107a3e72e7a9373bc1ad6
    https://hal.science/hal-03239738

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