-
1
المؤلفون: C. Hutzler, M. Trentzsch, A. Bahlmann, C. Schöne, C. Gottschalk, S. Weigel
المصدر: Lebensmittelchemie. 76
مصطلحات موضوعية: Pharmaceutical Science
-
2
المؤلفون: Ralf Richter, Thomas Melde, Stefan Duenkel, H. Giesler, N. Weddeler, Sven Beyer, M. Trentzsch, M. Otto, F. Weisbuch
المصدر: 2021 IEEE International Memory Workshop (IMW).
مصطلحات موضوعية: 010302 applied physics, Hardware_MEMORYSTRUCTURES, Fabrication, Materials science, High interest, business.industry, Process (computing), Silicon on insulator, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Non-volatile memory, Flash (photography), 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Layer (electronics), Scaling
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c6ae2514b5570f787d3591913558983f
https://doi.org/10.1109/imw51353.2021.9439612 -
3
المؤلفون: Luca Larcher, M. Trentzsch, Milan Pešić, Stefan Dunkel, Andrea Padovani, Sven Beyer, Halid Mulaosmanovic, Thomas Mikolajick, J. Ocker, H. Zhou, Stefan Slesazeck, Stefan Müller
المصدر: 2020 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: Computer science, Transistor, computer.software_genre, Ferroelectricity, Simulation software, Threshold voltage, law.invention, Trap (computing), Memory cell, law, Electronic engineering, Field-effect transistor, computer, Leakage (electronics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfc46a5a0b9367266f62824f97897be6
https://doi.org/10.1109/iedm13553.2020.9371975 -
4
المؤلفون: Xinwang Liu, Tom Herrmann, G. Festes, B. Bertello, Yuri Tkachev, Boris Bayha, M. Duggan, Ralf Richter, Alban Zaka, Decobert Catherine, Thomas Melde, S. Wittek, Stefan Dunkel, N. Do, P. Ghazav, N. Bollon, F. Mauersberger, Sven Beyer, Kim Jinho, Viktor Markov, B. Muller, Zhou Feng, S. Jourba, M. Trentzsch
المصدر: 2020 IEEE International Memory Workshop (IMW).
مصطلحات موضوعية: 010302 applied physics, Computer science, business.industry, Transistor, 020206 networking & telecommunications, 02 engineering and technology, 01 natural sciences, law.invention, Flash (photography), Reliability (semiconductor), CMOS, Memory cell, law, 0103 physical sciences, Process integration, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Data retention, Metal gate, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::68d6b99bb8692b55d9511f87f7674fd4
https://doi.org/10.1109/imw48823.2020.9108118 -
5
المؤلفون: Sven Beyer, Thomas Melde, S. Wittek, L. Perniola, S. Duenkel, C. Cagli, M. Trentzsch, F. Gaillard, B. Mueller
المصدر: IRPS
مصطلحات موضوعية: Data stability, Hardware_MEMORYSTRUCTURES, Materials science, business.industry, Bit error rate, Optoelectronics, Field-effect transistor, Performance improvement, business, Stability (probability), Ferroelectricity
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cef8dc8e7d157e02c01119ad77f5c94f
https://doi.org/10.1109/irps.2019.8720449 -
6
المؤلفون: Johannes Müller, El Mehdi Bazizi, Jochen Poth, Tom Herrmann, Hoon Kim, K. Mothes, Boris Bayha, Stefan Dunkel, Alban Zaka, Kim Jinho, N. Do, Lemke Steven, Henry A. O'm'mani, Martin Mazur, R. Huselitz, Peter Krottenthaler, Sven Beyer, S. Jansen, Parviz Ghazavi, M. Trentzsch, A. Henke, Zhou Feng, Xinwang Liu, P. Moll, Jan Paul, Yuri Tkachev, Tiwari Vipin, Ralf Richter
المصدر: 2018 IEEE International Electron Devices Meeting (IEDM).
مصطلحات موضوعية: 010302 applied physics, Bit cell, Cost efficiency, business.industry, Computer science, Transistor, Electrical engineering, 01 natural sciences, law.invention, Flash (photography), Reliability (semiconductor), law, 0103 physical sciences, business, Metal gate
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1f87d0d5543f568cc29c20e10141511f
https://doi.org/10.1109/iedm.2018.8614652 -
7
المؤلفون: J. Muller, P. Polakowski, S. Muller, H. Mulaosmanovic, J. Ocker, T. Mikolajick, S. Slesazeck, S. Flachowsky, M. Trentzsch
المصدر: 2016 16th Non-Volatile Memory Technology Symposium (NVMTS).
مصطلحات موضوعية: 010302 applied physics, Materials science, Field (physics), business.industry, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Ferroelectricity, Stress (mechanics), Semiconductor, 0103 physical sciences, Optoelectronics, Degradation (geology), Field-effect transistor, 0210 nano-technology, Polarization (electrochemistry), business, Low voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::dc7c7bef89026d319a01cf2b6b2308d5
https://doi.org/10.1109/nvmts.2016.7781517 -
8
المؤلفون: Andreas Kerber, Barry Linder, D. Lipp, Eduard A. Cartier, M. Trentzsch
المصدر: 2011 International Electron Devices Meeting.
مصطلحات موضوعية: Materials science, Dielectric strength, business.industry, Electrical engineering, High voltage, Time-dependent gate oxide breakdown, Hardware_PERFORMANCEANDRELIABILITY, Discrete circuit, CMOS, Hardware_INTEGRATEDCIRCUITS, Inverter, business, Metal gate, Hardware_LOGICDESIGN, Electronic circuit
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f4b93af0b343bc0a01c4c42b3961909e
https://doi.org/10.1109/iedm.2011.6131576 -
9دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
10دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل.