المؤلفون: C. Spinella, M. Vulpio, R. A. Puglisi, M. Bileci, Cosimo Gerardi, G. Ammendola, Giuseppe Nicotra, Salvatore Lombardo

المصدر: Journal of applied physics 95 (2004): 2049–2055. doi:10.1063/1.1639950
info:cnr-pdr/source/autori:Nicotra G.; Puglisi R.A.; Lombardo S.; Spinella C.; Vulpio M.; Ammendola G.; Bileci M.; Gerardi C./titolo:Nucleation kinetics of Si quantum dots on SiO2/doi:10.1063%2F1.1639950/rivista:Journal of applied physics/anno:2004/pagina_da:2049/pagina_a:2055/intervallo_pagine:2049–2055/volume:95

مصطلحات موضوعية: Chemistry, Electron energy loss spectroscopy, Analytical chemistry, Nucleation, General Physics and Astronomy, MEMORY ELECTRONIC DEVICE, MICROSCOPY, Chemical vapor deposition, Molecular physics, Characterization (materials science), Transmission electron microscopy, Quantum dot, Energy filtered transmission electron microscopy, GROWTH, Wetting, SILICON

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad8db216b567a2f7a7fabc0cdf7edaa5

المؤلفون: G. Renna, Giuseppe Nicotra, M. Bileci, N. Nastasi, Isodiana Crupi, Cosimo Gerardi, M. Vulpio, Salvatore Lombardo, G. Ammendola

المساهمون: Ammendola, G., Vulpio, M., Bileci, M., Nastasi, N., Gerardi, C., Renna, G., Crupi, I., Nicotra, G., Lombardo, S.

مصطلحات موضوعية: Materials science, Silicon, Physics and Astronomy (miscellaneous), business.industry, General Engineering, Oxide, chemistry.chemical_element, Nanotechnology, Chemical vapor deposition, Settore ING-INF/01 - Elettronica, Threshold voltage, chemistry.chemical_compound, chemistry, Nanocrystal, MOSFET, Optoelectronics, Wafer, Field-effect transistor, Electrical and Electronic Engineering, business, Surfaces and Interface

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86110514f84c25d1dc74b90fe9366953
http://hdl.handle.net/10447/179622

المؤلفون: Isodiana Crupi, M. Vulpio, Emanuele Rimini, G. Ammendola, Salvatore Lombardo, M. Melanotte, Cosimo Gerardi

المساهمون: Crupi, I., Lombardo, S., Gerardi, C., Ammendola, G., Vulpio, M., Rimini, E., Melanotte, M.

المصدر: Diffusion and defect data, solid state data. Part B, Solid state phenomena 82-84 (2002): 669–674.
info:cnr-pdr/source/autori:Crupi I., Lombardo S., Gerardi C., Ammendola G., Vulpio M., Rimini E., Melanotte M./titolo:Memory effects in single-electron nanostructures/doi:/rivista:Diffusion and defect data, solid state data. Part B, Solid state phenomena/anno:2002/pagina_da:669/pagina_a:674/intervallo_pagine:669–674/volume:82-84
Scopus-Elsevier

مصطلحات موضوعية: Coulomb blockade, Materials science, Nanostructure, Physics and Astronomy (miscellaneous), Condensed matter physics, Quantum dot, Condensed Matter Physic, Condensed Matter Physics, Settore ING-INF/01 - Elettronica, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Single electron, Memory, Single-electron, General Materials Science, Materials Science (all)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0d4e83761655be9ab8feb1af7785dab
http://www.cnr.it/prodotto/i/35157

المؤلفون: Cosimo Gerardi, G. Ammendola, Giuseppe Nicotra, N. Nastasi, Isodiana Crupi, M. Vulpio, T. Rossetti, G. Mantarro, Salvatore Lombardo

المساهمون: Vulpio, M., Gerardi, C., Lombardo, S., Ammendola, G., Crupi, I., Rossetti, T., Nastasi, N., Mantarro, G., Nicotra, G.

المصدر: Scopus-Elsevier
Gettering and Defect Engineering in Semiconductor Technology, pp. 663–668, 2002
info:cnr-pdr/source/autori:Vulpio M, Gerardi C, Lombardo S, Ammendola G, Crupi I, Rossetti T, Nastasi N, Mantarro G, Nicotra G/congresso_nome:Gettering and Defect Engineering in Semiconductor Technology/congresso_luogo:/congresso_data:2002/anno:2002/pagina_da:663/pagina_a:668/intervallo_pagine:663–668

مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Quantum dot, Nanotechnology, Chemical vapor deposition, Nanocrystal, Condensed Matter Physic, Condensed Matter Physics, Memory effect, Settore ING-INF/01 - Elettronica, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, General Materials Science, Materials Science (all), Deposition (chemistry)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72b983866a049f3b5768b4ad9f4b81e1
http://hdl.handle.net/10447/179616

المؤلفون: Barbara Fazio, Salvatore Lombardo, Yougui Liao, Cosimo Gerardi, Isodiana Crupi, M. Vulpio, Corrado Bongiorno, M. Melanotte, Corrado Spinella

المساهمون: Crupi, I., Lombardo, S., Spinella, C., Gerardi, C., Fazio, B., Vulpio, M., Melanotte, M., Liao, Y., Bongiorno, C.

المصدر: Materials science & engineering. C, Biomimetic materials, sensors and systems
15 (2001): 283–285. doi:10.1016/S0928-4931(01)00220-X
info:cnr-pdr/source/autori:Crupi I, Lombardo S, Spinella C, Gerardi C, Fazio B, Vulpio M, Melanotte M, Liao Y, Bongiorno C/titolo:Memory effects in MOS capacitors with silicon quantum dots/doi:10.1016%2FS0928-4931(01)00220-X/rivista:Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)/anno:2001/pagina_da:283/pagina_a:285/intervallo_pagine:283–285/volume:15

مصطلحات موضوعية: Materials science, SRO, Oxide, Bioengineering, Insulator (electricity), Chemical vapor deposition, engineering.material, Settore ING-INF/01 - Elettronica, law.invention, Biomaterials, chemistry.chemical_compound, law, Thin film, Nanocrystal memory, business.industry, Silicon-rich oxide, Amorphous solid, Capacitor, Polycrystalline silicon, chemistry, Mechanics of Materials, Transmission electron microscopy, Single electron memory, engineering, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::183ea95e472509103cd209296dc69049
http://hdl.handle.net/10447/179590

المؤلفون: C. Spinella, M. Vulpio, Cosimo Gerardi, Stefania Privitera, Corrado Bongiorno, Y. Liao, Barbara Fazio, Salvatore Lombardo, Isodiana Crupi

المساهمون: Crupi, I., Lombardo, S., Spinella, C., Bongiorno, C., Liao, Y., Gerardi, C., Fazio, B., Vulpio, M., Privitera, S.

المصدر: Journal of applied physics 89 (2001): 5552–5558.
info:cnr-pdr/source/autori:Crupi I, Lombardo S, Spinella C, Bongiorno C, Liao Y, Gerardi C, Fazio B, Vulpio M, Privitera S/titolo:Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide/doi:/rivista:Journal of applied physics/anno:2001/pagina_da:5552/pagina_a:5558/intervallo_pagine:5552–5558/volume:89

مصطلحات موضوعية: Materials science, Silicon, business.industry, Annealing (metallurgy), Oxide, General Physics and Astronomy, chemistry.chemical_element, Mineralogy, capacitors, electrical measurements, Settore ING-INF/01 - Elettronica, Grain size, Settore FIS/03 - Fisica Della Materia, law.invention, chemistry.chemical_compound, Capacitor, chemistry, Gate oxide, Transmission electron microscopy, law, Optoelectronics, Electrical measurements, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb9bcb7be4aac5aa8c75bdecfddec29a
http://hdl.handle.net/10447/179592

المؤلفون: Y. Liao, Salvatore Lombardo, M. Vulpio, Corrado Bongiorno, Barbara Fazio, Cosimo Gerardi, Stefania Privitera, Corrado Spinella, Isodiana Crupi

المساهمون: Lombardo, S., Crupi, I., Spinella, C., Bongiorno, C., Liao, Y., Gerardi, C., Vulpio, M., Fazio, B., Privitera, S.

المصدر: Scopus-Elsevier

مصطلحات موضوعية: Materials science, Silicon, business.industry, Oxide, chemistry.chemical_element, Nanotechnology, Chemical vapor deposition, engineering.material, Settore ING-INF/01 - Elettronica, Electronic, Optical and Magnetic Materials, Amorphous solid, law.invention, Capacitor, chemistry.chemical_compound, Polycrystalline silicon, chemistry, Transmission electron microscopy, law, engineering, Optoelectronics, Thin film, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbf8697b1e56ec81d346bf42b5cfe053
http://www.scopus.com/inward/record.url?eid=2-s2.0-0034428467&partnerID=MN8TOARS

المؤلفون: Isodiana Crupi, Emanuele Rimini, M. Melanotte, M. Vulpio, Cosimo Gerardi, Salvatore Lombardo, Barbara Fazio

المساهمون: Crupi, I., Lombardo, S., Gerardi, C., Fazio, B., Vulpio, M., Rimini, E., Melanotte, M.

المصدر: Scopus-Elsevier
Gettering and Defect Engineering in Semiconductor Technology, pp. 675–680, 2002
info:cnr-pdr/source/autori:Crupi I, Lombardo S, Gerardi C, Fazio B, Vulpio M, Rimini E, Melanotte M/congresso_nome:Gettering and Defect Engineering in Semiconductor Technology/congresso_luogo:/congresso_data:2002/anno:2002/pagina_da:675/pagina_a:680/intervallo_pagine:675–680

مصطلحات موضوعية: Materials science, Silicon, SRO, Physics and Astronomy (miscellaneous), MOS memory, Oxide, Quantum dot, chemistry.chemical_element, Nanotechnology, Condensed Matter Physic, Condensed Matter Physics, Settore ING-INF/01 - Elettronica, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Nanocrystal, General Materials Science, Materials Science (all)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::027b7fb8db9b9bd05724ae89933784a1
http://www.scopus.com/inward/record.url?eid=2-s2.0-0036131498&partnerID=MN8TOARS

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