يعرض 1 - 10 نتائج من 631 نتيجة بحث عن '"MARESCA L"', وقت الاستعلام: 0.85s تنقيح النتائج
  1. 1
    مؤتمر
    A novel low-cost timing system for alpine ski races based on low power microcontrollers and peer-to-peer wireless data transfer

    المؤلفون: Mazzocca, D., Borghese, A., Marrazzo, V. R., Maresca, L., Riccio, M., Breglio, G., Irace, A.

    المصدر: 2024 IEEE International Workshop on Sport, Technology and Research (STAR) Sport, Technology and Research (STAR), 2024 IEEE International Workshop on. :1-4 Jul, 2024

    Relation: 2024 IEEE International Workshop on Sport, Technology and Research (STAR)

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  2. 2
    دورية أكاديمية
    3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

    المؤلفون: Melnyk, K., Renz, A.B., Cao, Q., Gammon, P.M., Lophitis, N., Maresca, L., Irace, A., Nistor, I., Rahimo, M., Antoniou, M.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 71(9):5573-5580 Sep, 2024

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  3. 3
    مؤتمر
    Substantial Improvement of the Short-circuit Capability of a 1.2 kV SiC MOSFET by a HfO2/SiO2 Ferroelectric Gate Stack

    المؤلفون: Boccarossa, M., Maresca, L., Borghese, A., Riccio, M., Breglio, G., Irace, A., Salvatore, G. A.

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :88-91 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  4. 4
    مؤتمر
    Short-Circuit Rugged 1.2 kV SiC MOSFET with a Non-Linear Dielectric Gate Stack

    المؤلفون: Boccarossa, M., Maresca, L., Borghese, A., Riccio, M., Breglio, G., Irace, A., Salvatore, G. A.

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :354-357 May, 2023

    Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  5. 5
    مؤتمر
    Short-circuit and Avalanche Robustness of SiC Power MOSFETs for Aerospace Power Converters

    المؤلفون: Borghese, A., Boccarossa, M., Riccio, M., Maresca, L., Breglio, G., Irace, A.

    المصدر: 2023 IEEE Aerospace Conference Aerospace Conference, 2023 IEEE. :1-8 Mar, 2023

    Relation: 2023 IEEE Aerospace Conference

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  6. 6
    مؤتمر
    An Electrothermal Compact Model for SiC MOSFETs Based on SPICE Primitives with Improved Description of the JFET Resistance

    المؤلفون: Borghese, A., Riccio, M., Maresca, L., Breglio, G., Irace, A.

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :37-40 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  7. 7
    مؤتمر
    Gate Driver for p-GaN HEMTs with Real-Time Monitoring Capability of Channel Temperature

    المؤلفون: Borghese, A., Riccio, M., Maresca, L., Breglio, G., Irace, A.

    المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :63-66 May, 2021

    Relation: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  8. 8
    دورية أكاديمية
    Influence of the SiC/SiO2 SiC MOSFET Interface Traps Distribution on C–V Measurements Evaluated by TCAD Simulations

    المؤلفون: Maresca, L., Matacena, I., Riccio, M., Irace, A., Breglio, G., Daliento, S.

    المصدر: IEEE Journal of Emerging and Selected Topics in Power Electronics IEEE J. Emerg. Sel. Topics Power Electron. Emerging and Selected Topics in Power Electronics, IEEE Journal of. 9(2):2171-2179 Apr, 2021

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  9. 9
    دورية أكاديمية
    A Comprehensive Investigation on Short-Circuit Oscillation of p-GaN HEMTs

    المؤلفون: Xue, P., Maresca, L., Riccio, M., Breglio, G., Irace, A.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(11):4849-4857 Nov, 2020

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  10. 10
    مؤتمر
    An Experimentally Verified 3.3 kV SiC MOSFET Model Suitable for High-Current Modules Design

    المؤلفون: Borghese, A., Riccio, M., Maresca, L., Breglio, G., Irace, A, Romano, G., Bianda, E., Mihaila, A., Bellini, M., Knoll, L., Wirths, S.

    المصدر: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2019 31st International Symposium on. :215-218 May, 2019

    Relation: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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