يعرض 1 - 10 نتائج من 426 نتيجة بحث عن '"MOS-HEMT"', وقت الاستعلام: 0.88s تنقيح النتائج
  1. 1
    مؤتمر
    Influence of High-k Dielectric Materials on AlGaN/AlInGaN/GaN MOS-HEMT Grown on β-Ga2O3Substrate: Numerical Study

    المؤلفون: Amina, NOUAL, Zitouni, MESSAI, Zineeddine, TOUATI

    المصدر: 2024 2nd International Conference on Electrical Engineering and Automatic Control (ICEEAC) Electrical Engineering and Automatic Control (ICEEAC), 2024 2nd International Conference on. :1-6 May, 2024

    Relation: 2024 2nd International Conference on Electrical Engineering and Automatic Control (ICEEAC)

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  2. 2
    مؤتمر
    DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers

    المؤلفون: O'Sullivan, B. J., Alian, A., Sibaja-Hernandez, A., Franco, J., Yadav, S., Yu, H., Rathi, A., Peralagu, U., Chasin, A., Parvais, B., Collaert, N.

    المصدر: 2024 IEEE International Reliability Physics Symposium (IRPS) International Reliability Physics Symposium (IRPS), 2024 IEEE. :1-9 Apr, 2024

    Relation: 2024 IEEE International Reliability Physics Symposium (IRPS)

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  3. 3
    مؤتمر
    Analytical Comparison of Analog/RF Performance of DG InAlGaN/GaN based MOS-HEMTsfor GaN width variation

    المؤلفون: Sorkhel, Kathakoli, Ghosh, Atig, Mukherjee, Hrit, Chatterjee, Soumyo, Kar, Mousiki, Kundu, Atanu

    المصدر: 2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA) Industrial Electronics: Developments & Applications (ICIDeA), 2023 IEEE 2nd International Conference on. :54-59 Sep, 2023

    Relation: 2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA)

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  4. 4
    مؤتمر
    Influence of Introducing Symmetric Underlap on Analog Performance of Dual Gate AlGaN/GaN MOS-HEMT

    المؤلفون: Banerjee, Amrita, Mitra, Rajrup, Roy, Akash, Kundu, Atanu, Kar, Mousiki, Chatterjee, Soumyo

    المصدر: 2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA) Industrial Electronics: Developments & Applications (ICIDeA), 2023 IEEE 2nd International Conference on. :60-63 Sep, 2023

    Relation: 2023 IEEE 2nd International Conference on Industrial Electronics: Developments & Applications (ICIDeA)

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  5. 5
    مؤتمر
    Temperature-based Numerical Simulation investigation of the analog performance of AlGaN/GaN MOS-HEMT

    المؤلفون: Ruby, Mann, Shobha, Sharma, Sonam, Rewari, Gupta, R. S.

    المصدر: 2023 IEEE Devices for Integrated Circuit (DevIC) Devices for Integrated Circuit (DevIC), 2023 IEEE. :537-541 Apr, 2023

    Relation: 2023 IEEE Devices for Integrated Circuit (DevIC)

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  6. 6
    دورية أكاديمية
    Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions

    المؤلفون: Jadhav, A., Ozawa, T., Baratov, A., Asubar, J.T., Kuzuhara, M., Wakejima, A., Yamashita, S., Deki, M., Nitta, S., Honda, Y., Amano, H., Roy, S., Sarkar, B.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 68(12):6059-6064 Dec, 2021

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  7. 7
    مؤتمر
    CSI based Analytical Model for evaluation of DC Characteristics in AlGaN/GaN/AlInN MOS-HEMT using high-k dielectrics

    المؤلفون: Sandeep, V., Pravin, J. Charles, Babu, A. Ramesh, Prajoon, P.

    المصدر: 2020 4th International Conference on Electronics, Communication and Aerospace Technology (ICECA) Electronics, Communication and Aerospace Technology (ICECA), 2020 4th International Conference on. :471-478 Nov, 2020

    Relation: 2020 4th International Conference on Electronics, Communication and Aerospace Technology (ICECA)

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  8. 8
    دورية أكاديمية
    Analytical Modeling and Simulation of AlGaN/GaN MOS-HEMT for High Sensitive pH Sensor

    المؤلفون: Pal, P., Pratap, Y., Gupta, M., Kabra, S.

    المصدر: IEEE Sensors Journal IEEE Sensors J. Sensors Journal, IEEE. 21(12):12998-13005 Jun, 2021

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  9. 9
    مؤتمر
    A Comparative Analysis of Analog Performances of Underlapped Dual Gate AlGaN/GaN Based MOS-HEMT and Schottky-HEMT

    المؤلفون: Mukherjee, Hrit, Dasgupta, Rajanya, Kar, Mousiki, Kundu, Atanu

    المصدر: 2020 IEEE Calcutta Conference (CALCON) Calcutta Conference (CALCON), 2020 IEEE. :412-416 Feb, 2020

    Relation: 2020 IEEE Calcutta Conference (CALCON)

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  10. 10
    مؤتمر
    Influence of GaN layer to AlGaN layer width Ratio on Analog Performance of an Underlapped DG AlGaN/GaN based MOS-HEMT

    المؤلفون: Chatterjee, Upayan, Pal, Ananya, Kundu, Atanu, Kar, Mousiki

    المصدر: 2020 IEEE Calcutta Conference (CALCON) Calcutta Conference (CALCON), 2020 IEEE. :426-430 Feb, 2020

    Relation: 2020 IEEE Calcutta Conference (CALCON)

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